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Spin-Dependent Quantum Transport in Epitaxial BaTiO3-Germanium Tunnel Junctions
Spin-Dependent Quantum Transport in Epitaxial BaTiO3-Germanium Tunnel Junctions
상세정보
- 자료유형
- 학위논문파일 국외
- ISBN
- 9798538102846
- DDC
- 530
- 저자명
- Jia, Yichen.
- 서명/저자
- Spin-Dependent Quantum Transport in Epitaxial BaTiO3-Germanium Tunnel Junctions
- 발행사항
- [Sl] : Yale University, 2020
- 발행사항
- Ann Arbor : ProQuest Dissertations & Theses, 2020
- 형태사항
- 218 p
- 주기사항
- Source: Dissertations Abstracts International, Volume: 83-03, Section: B.
- 주기사항
- Advisor: Ahn, Charles H.
- 학위논문주기
- Thesis (Ph.D.)--Yale University, 2020.
- 사용제한주기
- This item must not be sold to any third party vendors.
- 일반주제명
- Condensed matter physics
- 일반주제명
- Quantum physics
- 일반주제명
- Materials science
- 일반주제명
- Silicon
- 일반주제명
- Lifetime
- 일반주제명
- Electrodes
- 일반주제명
- Semiconductors
- 일반주제명
- Experiments
- 일반주제명
- Magnetic fields
- 일반주제명
- Conductivity
- 일반주제명
- Electric fields
- 일반주제명
- Sensors
- 일반주제명
- Applied physics
- 일반주제명
- Molecular beam epitaxy
- 일반주제명
- CMOS
- 일반주제명
- Advisors
- 일반주제명
- Transistors
- 일반주제명
- Boundary conditions
- 일반주제명
- Thin films
- 일반주제명
- Geometry
- 키워드
- Complex oxides
- 키워드
- Heterostructures
- 키워드
- Semiconductors
- 키워드
- Spin
- 기타저자
- Yale University Electrical Engineering
- 기본자료저록
- Dissertations Abstracts International. 83-03B.
- 기본자료저록
- Dissertation Abstract International
- 전자적 위치 및 접속
- 로그인 후 원문을 볼 수 있습니다.
MARC
008220131s2020 us c eng d■020 ▼a9798538102846
■035 ▼a(MiAaPQ)AAI28149545
■040 ▼aMiAaPQ▼cMiAaPQ
■0820 ▼a530
■1001 ▼aJia, Yichen.
■24510▼aSpin-Dependent Quantum Transport in Epitaxial BaTiO3-Germanium Tunnel Junctions
■260 ▼a[Sl]▼bYale University▼c2020
■260 1▼aAnn Arbor▼bProQuest Dissertations & Theses▼c2020
■300 ▼a218 p
■500 ▼aSource: Dissertations Abstracts International, Volume: 83-03, Section: B.
■500 ▼aAdvisor: Ahn, Charles H.
■5021 ▼aThesis (Ph.D.)--Yale University, 2020.
■506 ▼aThis item must not be sold to any third party vendors.
■590 ▼aSchool code: 0265.
■650 4▼aCondensed matter physics
■650 4▼aQuantum physics
■650 4▼aMaterials science
■650 4▼aSilicon
■650 4▼aLifetime
■650 4▼aElectrodes
■650 4▼aSemiconductors
■650 4▼aExperiments
■650 4▼aMagnetic fields
■650 4▼aConductivity
■650 4▼aElectric fields
■650 4▼aSensors
■650 4▼aApplied physics
■650 4▼aMolecular beam epitaxy
■650 4▼aCMOS
■650 4▼aAdvisors
■650 4▼aTransistors
■650 4▼aBoundary conditions
■650 4▼aThin films
■650 4▼aGeometry
■653 ▼aComplex oxides
■653 ▼aHeterostructures
■653 ▼aMolecular beam epitaxy
■653 ▼aQuantum transport
■653 ▼aSemiconductors
■653 ▼aSpin
■690 ▼a0611
■690 ▼a0794
■690 ▼a0599
■690 ▼a0215
■71020▼aYale University▼bElectrical Engineering.
■7730 ▼tDissertations Abstracts International▼g83-03B.
■773 ▼tDissertation Abstract International
■790 ▼a0265
■791 ▼aPh.D.
■792 ▼a2020
■793 ▼aEnglish
■85640▼uhttp://www.riss.kr/pdu/ddodLink.do?id=T16051080▼nKERIS▼z이 자료의 원문은 한국교육학술정보원에서 제공합니다.
■980 ▼a202202▼f2022
