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Wide Bandgap Semiconductor Power Devices Using Ga2O3 GaN and BN
Wide Bandgap Semiconductor Power Devices Using Ga2O3 GaN and BN
상세정보
- 자료유형
- 학위논문파일 국외
- 최종처리일시
- 20220210093808
- ISBN
- 9798535542294
- DDC
- 621.3
- 저자명
- Yang, Tsung-Han.
- 서명/저자
- Wide Bandgap Semiconductor Power Devices Using Ga2O3 GaN and BN
- 발행사항
- [Sl] : Arizona State University, 2021
- 발행사항
- Ann Arbor : ProQuest Dissertations & Theses, 2021
- 형태사항
- 92 p
- 주기사항
- Source: Dissertations Abstracts International, Volume: 83-03, Section: B.
- 주기사항
- Advisor: Zhao, Yuji.
- 학위논문주기
- Thesis (Ph.D.)--Arizona State University, 2021.
- 사용제한주기
- This item must not be sold to any third party vendors.
- 일반주제명
- Electrical engineering
- 일반주제명
- Chemical engineering
- 일반주제명
- Boron
- 일반주제명
- Simulation
- 일반주제명
- Diodes
- 일반주제명
- Investigations
- 일반주제명
- Silicon carbide
- 일반주제명
- Semiconductors
- 일반주제명
- Electric fields
- 일반주제명
- Hydrochloric acid
- 일반주제명
- High temperature
- 일반주제명
- Plasma etching
- 일반주제명
- Hydrogen
- 일반주제명
- Aluminum
- 일반주제명
- Heat
- 일반주제명
- Energy
- 일반주제명
- Morphology
- 일반주제명
- Radiation
- 일반주제명
- Efficiency
- 일반주제명
- Bias
- 키워드
- BN
- 키워드
- Ga2O3
- 키워드
- GaN
- 기타저자
- Arizona State University Electrical Engineering
- 기본자료저록
- Dissertations Abstracts International. 83-03B.
- 기본자료저록
- Dissertation Abstract International
- 전자적 위치 및 접속
- 로그인 후 원문을 볼 수 있습니다.
MARC
008220131s2021 us c eng d■001000016053502
■00520220210093808
■020 ▼a9798535542294
■035 ▼a(MiAaPQ)AAI28649613
■040 ▼aMiAaPQ▼cMiAaPQ
■0820 ▼a621.3
■1001 ▼aYang, Tsung-Han.
■24510▼aWide Bandgap Semiconductor Power Devices Using Ga2O3 GaN and BN
■260 ▼a[Sl]▼bArizona State University▼c2021
■260 1▼aAnn Arbor▼bProQuest Dissertations & Theses▼c2021
■300 ▼a92 p
■500 ▼aSource: Dissertations Abstracts International, Volume: 83-03, Section: B.
■500 ▼aAdvisor: Zhao, Yuji.
■5021 ▼aThesis (Ph.D.)--Arizona State University, 2021.
■506 ▼aThis item must not be sold to any third party vendors.
■590 ▼aSchool code: 0010.
■650 4▼aElectrical engineering
■650 4▼aChemical engineering
■650 4▼aBoron
■650 4▼aSimulation
■650 4▼aDiodes
■650 4▼aInvestigations
■650 4▼aSilicon carbide
■650 4▼aSemiconductors
■650 4▼aElectric fields
■650 4▼aHydrochloric acid
■650 4▼aHigh temperature
■650 4▼aPlasma etching
■650 4▼aHydrogen
■650 4▼aAluminum
■650 4▼aHeat
■650 4▼aEnergy
■650 4▼aMorphology
■650 4▼aRadiation
■650 4▼aEfficiency
■650 4▼aBias
■653 ▼aBN
■653 ▼aGa2O3
■653 ▼aGaN
■653 ▼aPower electronics
■653 ▼aWide bandgap semiconductor
■690 ▼a0544
■690 ▼a0542
■690 ▼a0287
■690 ▼a0791
■71020▼aArizona State University▼bElectrical Engineering.
■7730 ▼tDissertations Abstracts International▼g83-03B.
■773 ▼tDissertation Abstract International
■790 ▼a0010
■791 ▼aPh.D.
■792 ▼a2021
■793 ▼aEnglish
■85640▼uhttp://www.riss.kr/pdu/ddodLink.do?id=T16053502▼nKERIS▼z이 자료의 원문은 한국교육학술정보원에서 제공합니다.
■980 ▼a202202▼f2022
