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Characterization of Spin Hall and Magneto-Ionic Devices for Logic, Memory and Neuromorphic Applications
Characterization of Spin Hall and Magneto-Ionic Devices for Logic, Memory and Neuromorphic Applications
상세정보
- 자료유형
- 학위논문파일 국외
- 최종처리일시
- 20220210093821
- ISBN
- 9798535594705
- DDC
- 530
- 저자명
- Sahu, Protyush.
- 서명/저자
- Characterization of Spin Hall and Magneto-Ionic Devices for Logic, Memory and Neuromorphic Applications
- 발행사항
- [Sl] : University of Minnesota, 2021
- 발행사항
- Ann Arbor : ProQuest Dissertations & Theses, 2021
- 형태사항
- 160 p
- 주기사항
- Source: Dissertations Abstracts International, Volume: 83-03, Section: B.
- 주기사항
- Advisor: Kamenev, Alex.
- 학위논문주기
- Thesis (Ph.D.)--University of Minnesota, 2021.
- 사용제한주기
- This item must not be sold to any third party vendors.
- 일반주제명
- Physics
- 일반주제명
- Electrical engineering
- 일반주제명
- Materials science
- 일반주제명
- Random access memory
- 일반주제명
- Spectrum analysis
- 일반주제명
- Fourier transforms
- 일반주제명
- Electromagnetism
- 일반주제명
- Experiments
- 일반주제명
- Magnetic fields
- 일반주제명
- CMOS
- 일반주제명
- Anisotropy
- 일반주제명
- Energy consumption
- 일반주제명
- Thin films
- 일반주제명
- Efficiency
- 일반주제명
- Asymmetry
- 일반주제명
- Bias
- 키워드
- Logic
- 키워드
- Magnetism
- 키워드
- Memory
- 키워드
- Neuromorphic
- 키워드
- Spintronics
- 기타저자
- University of Minnesota Physics
- 기본자료저록
- Dissertations Abstracts International. 83-03B.
- 기본자료저록
- Dissertation Abstract International
- 전자적 위치 및 접속
- 로그인 후 원문을 볼 수 있습니다.
MARC
008220131s2021 us c eng d■001000016053546
■00520220210093821
■020 ▼a9798535594705
■035 ▼a(MiAaPQ)AAI28650192
■040 ▼aMiAaPQ▼cMiAaPQ
■0820 ▼a530
■1001 ▼aSahu, Protyush.
■24510▼aCharacterization of Spin Hall and Magneto-Ionic Devices for Logic, Memory and Neuromorphic Applications
■260 ▼a[Sl]▼bUniversity of Minnesota▼c2021
■260 1▼aAnn Arbor▼bProQuest Dissertations & Theses▼c2021
■300 ▼a160 p
■500 ▼aSource: Dissertations Abstracts International, Volume: 83-03, Section: B.
■500 ▼aAdvisor: Kamenev, Alex.
■5021 ▼aThesis (Ph.D.)--University of Minnesota, 2021.
■506 ▼aThis item must not be sold to any third party vendors.
■590 ▼aSchool code: 0130.
■650 4▼aPhysics
■650 4▼aElectrical engineering
■650 4▼aMaterials science
■650 4▼aTransmission electron microscopy
■650 4▼aRandom access memory
■650 4▼aSpectrum analysis
■650 4▼aFourier transforms
■650 4▼aElectromagnetism
■650 4▼aExperiments
■650 4▼aMagnetic fields
■650 4▼aChemical vapor deposition
■650 4▼aCMOS
■650 4▼aAnisotropy
■650 4▼aEnergy consumption
■650 4▼aThin films
■650 4▼aField programmable gate arrays
■650 4▼aEfficiency
■650 4▼aAsymmetry
■650 4▼aBias
■653 ▼aLogic
■653 ▼aMagnetism
■653 ▼aMemory
■653 ▼aNeuromorphic
■653 ▼aSpintronics
■690 ▼a0605
■690 ▼a0544
■690 ▼a0794
■71020▼aUniversity of Minnesota▼bPhysics.
■7730 ▼tDissertations Abstracts International▼g83-03B.
■773 ▼tDissertation Abstract International
■790 ▼a0130
■791 ▼aPh.D.
■792 ▼a2021
■793 ▼aEnglish
■85640▼uhttp://www.riss.kr/pdu/ddodLink.do?id=T16053546▼nKERIS▼z이 자료의 원문은 한국교육학술정보원에서 제공합니다.
■980 ▼a202202▼f2022
