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Multifunctional Ferroelectrics Based Devices for Next Generation RF Front-Ends
Multifunctional Ferroelectrics Based Devices for Next Generation RF Front-Ends
상세정보
- 자료유형
- 학위논문 서양
- 최종처리일시
- 20250211152104
- ISBN
- 9798382740119
- DDC
- 620
- 저자명
- Nam, Suhyun.
- 서명/저자
- Multifunctional Ferroelectrics Based Devices for Next Generation RF Front-Ends
- 발행사항
- [Sl] : University of Michigan, 2024
- 발행사항
- Ann Arbor : ProQuest Dissertations & Theses, 2024
- 형태사항
- 120 p
- 주기사항
- Source: Dissertations Abstracts International, Volume: 85-12, Section: B.
- 주기사항
- Advisor: Mortazawi, Amir.
- 학위논문주기
- Thesis (Ph.D.)--University of Michigan, 2024.
- 초록/해제
- 요약Wireless communications, now within its fifth generation (5G), aims to attain connectivity across billions of devices, transcending geographical barriers and fostering advancements across various domains, such as healthcare, manufacturing, and transportation. However, this advancement presents challenges, notably the necessity to accommodate for numerous radio frequency (RF) bands, especially within the overcrowded sub-6-GHz spectrum. Moreover, there is further development toward incorporating millimeter-Wave (mm-Wave) frequencies for highspeed communication. Current RF front-end designs, already complex with over 100 filters and switchplexers, encounter limitations in accommodating these new frequencies within the confined space of mobile devices, demanding innovative solutions.This dissertation presents designs of acoustic wave resonators based on two different multifunctional ferroelectric materials: Barium Strontium Titanate (BaxSr1-xTiO3, BST) and Scandium Aluminum Nitride (ScxAl1-xN, ScAlN), in order to address different aspects of filter limitations. The first, BST, is employed in the design of ferroelectric based reconfigurable filters that require no external switches to transition between different bands of interest, specifically in the sub-6 GHz. As modules sizes continues to shrink, utilizing filters that are capable of multiple functions provide significant reduction in the overall complexity, cost, and size of the RF frontend. The second material, ScAlN, is employed to overcome frequency scaling challenges of current bulk acoustic wave (BAW) technology. By employing MBE grown film in a multilayer structure, a novel mm-Wave acoustic resonator with validation of polarization switching in the ScAlN layer is presented. Contribution of this work are categorized into three major parts.First, BST thin film bulk acoustic wave resonators (FBARs) are employed to design intrinsically switchable filters based on electrostrictive transduction. As a proof-of-concept, a systematically designed switchless, quad band acoustic wave filter bank with the lowest insertion loss to date in the literature is fabricated and measured. The filter bank is capable of switching between frequency bands of interest solely through a direct current (DC) bias applied across the associated BST FBARs and demonstrates its capability to streamline future radio systems.Beyond switching on and off the filter response, the second contribution employs BST's electrostriction effect in a hybrid-based approach to develop filters with the capability to alter their transfer function. The use of reconfigurable frequency-selective components along the RF frontend is highly attractive, as the same component potentially supports functionality across multiple different bands. For the first time, two designs of reconfigurable RF circuits on the BST-on-Si platform (bandstop to an all-pass response and bandpass to all-reject response) are experimentally validated at significantly higher operational frequencies than previously published results at the time. Moreover, this hybrid approach offers a method to attain fractional bandwidth (FBW), not limited to the inherent coupling of the associated resonators.The final part of this work incorporates thin film ferroelectric ScAlN in the design of a novel mm-Wave higher order mode FBAR. Selective excitation of multiple eigen modes within a multilayer FBAR structure through alternating configurations of positive and negative piezoelectricity (AlN and ScAlN, respectively) is highly advantageous compared to single layer BAW devices, which suffer from increased losses and reduced performance (quality factor, Q, and electromechanical coupling coefficient, kt2) with increased operating frequency. For the first time, a composite trilayer piezoelectric-ferroelectric-piezoelectric AlN-ScAlN-AlN FBAR exciting a third order thickness-extensional mode is demonstrated. To the author's knowledge, this is the first published work that demonstrates complete ScAlN polarization switching within a composite structure. The reported kt2 does not follow the same roll-off as typical BAW devices when transitioning between fundamental and third mode, and such resonators can be incorporated in the design of mm-Wave filters with greater FBW requirements.
- 일반주제명
- Engineering
- 일반주제명
- Computer engineering
- 일반주제명
- Acoustics
- 일반주제명
- Electrical engineering
- 키워드
- Ferroelectrics
- 키워드
- Radio frequency
- 기타저자
- University of Michigan Electrical and Computer Engineering
- 기본자료저록
- Dissertations Abstracts International. 85-12B.
- 전자적 위치 및 접속
- 로그인 후 원문을 볼 수 있습니다.
MARC
008250123s2024 us c eng d■001000017162856
■00520250211152104
■006m o d
■007cr#unu||||||||
■020 ▼a9798382740119
■035 ▼a(MiAaPQ)AAI31349056
■035 ▼a(MiAaPQ)umichrackham005528
■040 ▼aMiAaPQ▼cMiAaPQ
■0820 ▼a620
■1001 ▼aNam, Suhyun.
■24510▼aMultifunctional Ferroelectrics Based Devices for Next Generation RF Front-Ends
■260 ▼a[Sl]▼bUniversity of Michigan▼c2024
■260 1▼aAnn Arbor▼bProQuest Dissertations & Theses▼c2024
■300 ▼a120 p
■500 ▼aSource: Dissertations Abstracts International, Volume: 85-12, Section: B.
■500 ▼aAdvisor: Mortazawi, Amir.
■5021 ▼aThesis (Ph.D.)--University of Michigan, 2024.
■520 ▼aWireless communications, now within its fifth generation (5G), aims to attain connectivity across billions of devices, transcending geographical barriers and fostering advancements across various domains, such as healthcare, manufacturing, and transportation. However, this advancement presents challenges, notably the necessity to accommodate for numerous radio frequency (RF) bands, especially within the overcrowded sub-6-GHz spectrum. Moreover, there is further development toward incorporating millimeter-Wave (mm-Wave) frequencies for highspeed communication. Current RF front-end designs, already complex with over 100 filters and switchplexers, encounter limitations in accommodating these new frequencies within the confined space of mobile devices, demanding innovative solutions.This dissertation presents designs of acoustic wave resonators based on two different multifunctional ferroelectric materials: Barium Strontium Titanate (BaxSr1-xTiO3, BST) and Scandium Aluminum Nitride (ScxAl1-xN, ScAlN), in order to address different aspects of filter limitations. The first, BST, is employed in the design of ferroelectric based reconfigurable filters that require no external switches to transition between different bands of interest, specifically in the sub-6 GHz. As modules sizes continues to shrink, utilizing filters that are capable of multiple functions provide significant reduction in the overall complexity, cost, and size of the RF frontend. The second material, ScAlN, is employed to overcome frequency scaling challenges of current bulk acoustic wave (BAW) technology. By employing MBE grown film in a multilayer structure, a novel mm-Wave acoustic resonator with validation of polarization switching in the ScAlN layer is presented. Contribution of this work are categorized into three major parts.First, BST thin film bulk acoustic wave resonators (FBARs) are employed to design intrinsically switchable filters based on electrostrictive transduction. As a proof-of-concept, a systematically designed switchless, quad band acoustic wave filter bank with the lowest insertion loss to date in the literature is fabricated and measured. The filter bank is capable of switching between frequency bands of interest solely through a direct current (DC) bias applied across the associated BST FBARs and demonstrates its capability to streamline future radio systems.Beyond switching on and off the filter response, the second contribution employs BST's electrostriction effect in a hybrid-based approach to develop filters with the capability to alter their transfer function. The use of reconfigurable frequency-selective components along the RF frontend is highly attractive, as the same component potentially supports functionality across multiple different bands. For the first time, two designs of reconfigurable RF circuits on the BST-on-Si platform (bandstop to an all-pass response and bandpass to all-reject response) are experimentally validated at significantly higher operational frequencies than previously published results at the time. Moreover, this hybrid approach offers a method to attain fractional bandwidth (FBW), not limited to the inherent coupling of the associated resonators.The final part of this work incorporates thin film ferroelectric ScAlN in the design of a novel mm-Wave higher order mode FBAR. Selective excitation of multiple eigen modes within a multilayer FBAR structure through alternating configurations of positive and negative piezoelectricity (AlN and ScAlN, respectively) is highly advantageous compared to single layer BAW devices, which suffer from increased losses and reduced performance (quality factor, Q, and electromechanical coupling coefficient, kt2) with increased operating frequency. For the first time, a composite trilayer piezoelectric-ferroelectric-piezoelectric AlN-ScAlN-AlN FBAR exciting a third order thickness-extensional mode is demonstrated. To the author's knowledge, this is the first published work that demonstrates complete ScAlN polarization switching within a composite structure. The reported kt2 does not follow the same roll-off as typical BAW devices when transitioning between fundamental and third mode, and such resonators can be incorporated in the design of mm-Wave filters with greater FBW requirements.
■590 ▼aSchool code: 0127.
■650 4▼aEngineering
■650 4▼aComputer engineering
■650 4▼aAcoustics
■650 4▼aElectrical engineering
■653 ▼aFerroelectrics
■653 ▼aScandium Aluminum Nitride
■653 ▼aBarium Strontium Titanate
■653 ▼aRadio frequency
■690 ▼a0537
■690 ▼a0544
■690 ▼a0464
■690 ▼a0986
■71020▼aUniversity of Michigan▼bElectrical and Computer Engineering.
■7730 ▼tDissertations Abstracts International▼g85-12B.
■790 ▼a0127
■791 ▼aPh.D.
■792 ▼a2024
■793 ▼aEnglish
■85640▼uhttp://www.riss.kr/pdu/ddodLink.do?id=T17162856▼nKERIS▼z이 자료의 원문은 한국교육학술정보원에서 제공합니다.
