Halide Segregation and Photoelectrochemical Degradation in Halide Perovskite Materials and Devices
Halide Segregation and Photoelectrochemical Degradation in Halide Perovskite Materials and Devices
상세정보
- 자료유형
- 학위논문 서양
- 최종처리일시
- 20250211152123
- ISBN
- 9798384463801
- DDC
- 621.3
- 저자명
- Xu, Zhaojian.
- 서명/저자
- Halide Segregation and Photoelectrochemical Degradation in Halide Perovskite Materials and Devices
- 발행사항
- [Sl] : Princeton University, 2024
- 발행사항
- Ann Arbor : ProQuest Dissertations & Theses, 2024
- 형태사항
- 147 p
- 주기사항
- Source: Dissertations Abstracts International, Volume: 86-04, Section: B.
- 주기사항
- Advisor: Rand, Barry P.
- 학위논문주기
- Thesis (Ph.D.)--Princeton University, 2024.
- 초록/해제
- 요약Metal halide perovskites, owing to their straightforward bandgap tuning through variations in halide stoichiometry, have demonstrated significant potential in various optoelectronic devices. However, unwanted halide segregation under operational conditions, such as light illumination and voltage bias, limits practical applications, and the underlying mechanisms still require in-depth investigation. In this thesis, we experimentally explore both voltage-induced and light-induced halide segregation to uncover the photoelectrochemical origins of this phenomenon. We start with an examination of voltage-induced halide segregation and study the impact of voltage bias on halide perovskite devices. Through conducting a series of prolonged voltage biasing tests, complemented by extensive characterization techniques, we identify various voltage thresholds in mixed-halide perovskite devices and directly visualize the voltage-induced halide redistribution. Furthermore, we show that monolithic perovskite/silicon tandem solar cells exhibit superior reverse-bias resilience compared to perovskite single-junction devices, positioning them at a higher technology readiness level for addressing the challenge of partial shading. Lastly, we delve into light-induced halide segregation and examine the effect of organic hole transport layers (HTLs) on the photoluminescence behavior at perovskite/organic HTL interfaces. We demonstrate that the highest occupied molecular orbital energy of the HTL influences the reactivity of the I2/HTL redox reaction, halogen diffusion, and light-induced halide segregation at these interfaces. Our findings offer new insights into a variety of voltage-induced and light-induced instabilities in halide perovskite materials and devices from a photoelectrochemical standpoint, guiding the development of perovskite-based optoelectronic devices towards stable operation.
- 일반주제명
- Electrical engineering
- 일반주제명
- Materials science
- 일반주제명
- Energy
- 일반주제명
- Chemical engineering
- 키워드
- Silicon tandem
- 기타저자
- Princeton University Electrical and Computer Engineering
- 기본자료저록
- Dissertations Abstracts International. 86-04B.
- 전자적 위치 및 접속
- 로그인 후 원문을 볼 수 있습니다.
MARC
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■020 ▼a9798384463801
■035 ▼a(MiAaPQ)AAI31482092
■040 ▼aMiAaPQ▼cMiAaPQ
■0820 ▼a621.3
■1001 ▼aXu, Zhaojian.▼0(orcid)0000-0003-2537-5354
■24510▼aHalide Segregation and Photoelectrochemical Degradation in Halide Perovskite Materials and Devices
■260 ▼a[Sl]▼bPrinceton University▼c2024
■260 1▼aAnn Arbor▼bProQuest Dissertations & Theses▼c2024
■300 ▼a147 p
■500 ▼aSource: Dissertations Abstracts International, Volume: 86-04, Section: B.
■500 ▼aAdvisor: Rand, Barry P.
■5021 ▼aThesis (Ph.D.)--Princeton University, 2024.
■520 ▼aMetal halide perovskites, owing to their straightforward bandgap tuning through variations in halide stoichiometry, have demonstrated significant potential in various optoelectronic devices. However, unwanted halide segregation under operational conditions, such as light illumination and voltage bias, limits practical applications, and the underlying mechanisms still require in-depth investigation. In this thesis, we experimentally explore both voltage-induced and light-induced halide segregation to uncover the photoelectrochemical origins of this phenomenon. We start with an examination of voltage-induced halide segregation and study the impact of voltage bias on halide perovskite devices. Through conducting a series of prolonged voltage biasing tests, complemented by extensive characterization techniques, we identify various voltage thresholds in mixed-halide perovskite devices and directly visualize the voltage-induced halide redistribution. Furthermore, we show that monolithic perovskite/silicon tandem solar cells exhibit superior reverse-bias resilience compared to perovskite single-junction devices, positioning them at a higher technology readiness level for addressing the challenge of partial shading. Lastly, we delve into light-induced halide segregation and examine the effect of organic hole transport layers (HTLs) on the photoluminescence behavior at perovskite/organic HTL interfaces. We demonstrate that the highest occupied molecular orbital energy of the HTL influences the reactivity of the I2/HTL redox reaction, halogen diffusion, and light-induced halide segregation at these interfaces. Our findings offer new insights into a variety of voltage-induced and light-induced instabilities in halide perovskite materials and devices from a photoelectrochemical standpoint, guiding the development of perovskite-based optoelectronic devices towards stable operation.
■590 ▼aSchool code: 0181.
■650 4▼aElectrical engineering
■650 4▼aMaterials science
■650 4▼aEnergy
■650 4▼aChemical engineering
■653 ▼aHalide segregation
■653 ▼aMetal halide perovskites
■653 ▼aPhotoelectrochemical degradation
■653 ▼aHalide stoichiometry
■653 ▼aSilicon tandem
■690 ▼a0794
■690 ▼a0544
■690 ▼a0542
■690 ▼a0791
■71020▼aPrinceton University▼bElectrical and Computer Engineering.
■7730 ▼tDissertations Abstracts International▼g86-04B.
■790 ▼a0181
■791 ▼aPh.D.
■792 ▼a2024
■793 ▼aEnglish
■85640▼uhttp://www.riss.kr/pdu/ddodLink.do?id=T17163008▼nKERIS▼z이 자료의 원문은 한국교육학술정보원에서 제공합니다.
