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Nonresonant Nonlinear Optics of Semiconductors Studied Using Ultrashort Mid-Infrared Pulses
Nonresonant Nonlinear Optics of Semiconductors Studied Using Ultrashort Mid-Infrared Pulses
상세정보
- 자료유형
- 학위논문 서양
- 최종처리일시
- 20250211152122
- ISBN
- 9798383242438
- DDC
- 535
- 서명/저자
- Nonresonant Nonlinear Optics of Semiconductors Studied Using Ultrashort Mid-Infrared Pulses
- 발행사항
- [Sl] : University of California, Los Angeles, 2024
- 발행사항
- Ann Arbor : ProQuest Dissertations & Theses, 2024
- 형태사항
- 184 p
- 주기사항
- Source: Dissertations Abstracts International, Volume: 86-01, Section: B.
- 주기사항
- Advisor: Joshi, Chandra J.
- 학위논문주기
- Thesis (Ph.D.)--University of California, Los Angeles, 2024.
- 초록/해제
- 요약With the rapid development of mid-infrared laser sources with high peak power and ultrashort pulse durations, it is essential to understand the nonlinear optical properties of materials used for optical elements and photonic devices in the intensity regimes that are now accessible. Further progress in the field demands a new database for nonresonant nonlinear characteristics of widely used transparent mid-infrared materials. In this dissertation, we experimentally characterize the mid-infrared nonlinear optical response of semiconductor materials far from band gap resonances using orders of magnitude higher intensity and shorter pulse durations compared to previous studies with nanosecond laser pulses.This is first done using 200 ps, 10.6 μm CO2 laser pulses at intensities between 1-10 GW/cm2. The nonlinear refractive indices of mid-infrared transparent semiconductors GaAs, n-Ge, and ZnSe are determined, and observations of beat-wave nonlinearity enhancement in GaAs are attributed to a controllable free carrier nonlinearity. Unexpectedly high nonresonant nonlinear absorption is measured, which is a result of accumulated free carrier absorption effects over the course of the intense, picosecond pulses.Measurements of the same materials' nonlinear optical response at similar intensities are made using 220 fs laser pulses around 10 μm produced via difference-frequency generation. Nonlinear refraction is shown to be nearly constant over this broad parameter range. However, nonlinear absorption of femtosecond pulses is found begin at much higher intensity and exhibit stronger intensity scaling than with picosecond pulses. Strong-field photoionization is discussed in the context of the Keldysh theory. Additionally, measurements of the third-order nonlinearity of the remarkable semiconductor Tellurium are made for the first time, demonstrating a giant nonlinear refractive index ranking among the largest known in a bulk material. Three-photon absorption is observed, and the interplay between strong nonlinear optical and propagation effects are investigated numerically by solving the two-dimensional generalized nonlinear Schrodinger equation.Finally, mid-infrared photonic applications are demonstrated. The first measurements of second harmonic generation using 3 ps CO2 laser pulses are made, showing promise for a future platform delivering high-power, high-energy laser pulses around 5 μm or a two-color mid-infrared source suitable for THz generation in air-plasma filaments. All-optical semiconductor switching is studied on femtosecond timescales, employing different materials and wavelengths, for future ultrafast pulse switching and modulation applications.
- 일반주제명
- Optics
- 일반주제명
- Materials science
- 일반주제명
- Electrical engineering
- 키워드
- Mid-infrared
- 키워드
- Nonlinear optics
- 키워드
- Pulse durations
- 키워드
- Frequency
- 기타저자
- University of California, Los Angeles Electrical and Computer Engineering 0333
- 기본자료저록
- Dissertations Abstracts International. 86-01B.
- 전자적 위치 및 접속
- 로그인 후 원문을 볼 수 있습니다.
MARC
008250123s2024 us c eng d■001000017163003
■00520250211152122
■006m o d
■007cr#unu||||||||
■020 ▼a9798383242438
■035 ▼a(MiAaPQ)AAI31481845
■040 ▼aMiAaPQ▼cMiAaPQ
■0820 ▼a535
■1001 ▼aMatteo, Daniel Alexander.
■24510▼aNonresonant Nonlinear Optics of Semiconductors Studied Using Ultrashort Mid-Infrared Pulses
■260 ▼a[Sl]▼bUniversity of California, Los Angeles▼c2024
■260 1▼aAnn Arbor▼bProQuest Dissertations & Theses▼c2024
■300 ▼a184 p
■500 ▼aSource: Dissertations Abstracts International, Volume: 86-01, Section: B.
■500 ▼aAdvisor: Joshi, Chandra J.
■5021 ▼aThesis (Ph.D.)--University of California, Los Angeles, 2024.
■520 ▼aWith the rapid development of mid-infrared laser sources with high peak power and ultrashort pulse durations, it is essential to understand the nonlinear optical properties of materials used for optical elements and photonic devices in the intensity regimes that are now accessible. Further progress in the field demands a new database for nonresonant nonlinear characteristics of widely used transparent mid-infrared materials. In this dissertation, we experimentally characterize the mid-infrared nonlinear optical response of semiconductor materials far from band gap resonances using orders of magnitude higher intensity and shorter pulse durations compared to previous studies with nanosecond laser pulses.This is first done using 200 ps, 10.6 μm CO2 laser pulses at intensities between 1-10 GW/cm2. The nonlinear refractive indices of mid-infrared transparent semiconductors GaAs, n-Ge, and ZnSe are determined, and observations of beat-wave nonlinearity enhancement in GaAs are attributed to a controllable free carrier nonlinearity. Unexpectedly high nonresonant nonlinear absorption is measured, which is a result of accumulated free carrier absorption effects over the course of the intense, picosecond pulses.Measurements of the same materials' nonlinear optical response at similar intensities are made using 220 fs laser pulses around 10 μm produced via difference-frequency generation. Nonlinear refraction is shown to be nearly constant over this broad parameter range. However, nonlinear absorption of femtosecond pulses is found begin at much higher intensity and exhibit stronger intensity scaling than with picosecond pulses. Strong-field photoionization is discussed in the context of the Keldysh theory. Additionally, measurements of the third-order nonlinearity of the remarkable semiconductor Tellurium are made for the first time, demonstrating a giant nonlinear refractive index ranking among the largest known in a bulk material. Three-photon absorption is observed, and the interplay between strong nonlinear optical and propagation effects are investigated numerically by solving the two-dimensional generalized nonlinear Schrodinger equation.Finally, mid-infrared photonic applications are demonstrated. The first measurements of second harmonic generation using 3 ps CO2 laser pulses are made, showing promise for a future platform delivering high-power, high-energy laser pulses around 5 μm or a two-color mid-infrared source suitable for THz generation in air-plasma filaments. All-optical semiconductor switching is studied on femtosecond timescales, employing different materials and wavelengths, for future ultrafast pulse switching and modulation applications.
■590 ▼aSchool code: 0031.
■650 4▼aOptics
■650 4▼aMaterials science
■650 4▼aElectrical engineering
■653 ▼aLight-semiconductor interactions
■653 ▼aMid-infrared
■653 ▼aNonlinear optics
■653 ▼aPulse durations
■653 ▼aFrequency
■690 ▼a0752
■690 ▼a0794
■690 ▼a0544
■71020▼aUniversity of California, Los Angeles▼bElectrical and Computer Engineering 0333.
■7730 ▼tDissertations Abstracts International▼g86-01B.
■790 ▼a0031
■791 ▼aPh.D.
■792 ▼a2024
■793 ▼aEnglish
■85640▼uhttp://www.riss.kr/pdu/ddodLink.do?id=T17163003▼nKERIS▼z이 자료의 원문은 한국교육학술정보원에서 제공합니다.
