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Investigation on the two-dimensional electron gas in in as quantum wells coupled to epitaxial aluminum for exploration of topological superconductivity
Investigation on the two-dimensional electron gas in in as quantum wells coupled to epitax...
Investigation on the two-dimensional electron gas in in as quantum wells coupled to epitaxial aluminum for exploration of topological superconductivity

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자료유형  
 학위논문 서양
최종처리일시  
20250211152049
ISBN  
9798342106207
DDC  
621.795
저자명  
Zhang, Teng.
서명/저자  
Investigation on the two-dimensional electron gas in in as quantum wells coupled to epitaxial aluminum for exploration of topological superconductivity
발행사항  
[Sl] : Purdue University, 2024
발행사항  
Ann Arbor : ProQuest Dissertations & Theses, 2024
형태사항  
138 p
주기사항  
Source: Dissertations Abstracts International, Volume: 86-04, Section: B.
주기사항  
Advisor: Manfra, Michael J.;Greene, Christopher H.;Banerjee, Arnab;Vayrynen, Jukka I.
학위논문주기  
Thesis (Ph.D.)--Purdue University, 2024.
초록/해제  
요약The two-dimensional electron gas (2DEG) in shallow InAs quantum wells, combined with epitaxial aluminum, is commonly used to study topological superconductivity. Key features include strong spin-orbit coupling, a high effective g-factor, and the ability to manage proximity-induced superconductivity. My thesis discusses two aspects of this unique material. In the first section, I report on the transport characteristics of shallow InGaAs/InAs/InGaAs quantum wells and evaluate the effect of modulation doping on these shallow InAs quantum well structures. We systematically investigate the magnetotransport properties in relation to doping density and spacer thickness. Optimized samples show peak mobilities exceeding 100,000 cm2/Vs at n2DEG 1012 cm-2in gated Hall bar, marking the highest mobility observed in this type of heterostructure. Our findings suggest that the doping layer moves the electron wave function away from the surface, minimizing surface scattering and enhancing mobility. This mobility improvement does not compromise Rashba spin-orbit coupling or induced superconductivity. In the second section, motivated by a theoretical study by Peng et al., we explore tunneling spectroscopy measurements on DC current biased planar Josephson junctions made on an undoped hybrid epitaxial Al-InAs 2DEG heterostructure. We observe four tunneling conductance peaks in the spectroscopy that can be adjusted by DC current bias. Our analysis indicates that these results come from strong coupling between the tunneling probe and the superconducting leads, rather than from Floquet engineering. We also touch on potential improvements to the device's design and materials. This work lays the groundwork for further investigation of Floquet physics in planar Josephson junctions. This thesis ends with a discussion of other unusual physics that could be explored in these novel shallow InAs quantum wells coupled with epitaxial aluminum.
일반주제명  
Etching
일반주제명  
Crystal structure
일반주제명  
Aluminum
일반주제명  
Molecular beam epitaxy
일반주제명  
Energy
일반주제명  
Electrons
일반주제명  
Superconductivity
일반주제명  
Nanowires
일반주제명  
Spectrum analysis
일반주제명  
Semiconductors
일반주제명  
Magnetic fields
일반주제명  
Microscopy
일반주제명  
Analytical chemistry
일반주제명  
Atomic physics
일반주제명  
Electromagnetics
일반주제명  
Low temperature physics
일반주제명  
Nanotechnology
일반주제명  
Optics
기타저자  
Purdue University.
기본자료저록  
Dissertations Abstracts International. 86-04B.
전자적 위치 및 접속  
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MARC

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■035    ▼a(MiAaPQ)Purdue25669182
■040    ▼aMiAaPQ▼cMiAaPQ
■0820  ▼a621.795
■1001  ▼aZhang,  Teng.
■24510▼aInvestigation  on  the  two-dimensional  electron  gas  in  in  as  quantum  wells  coupled  to  epitaxial  aluminum  for  exploration  of  topological  superconductivity
■260    ▼a[Sl]▼bPurdue  University▼c2024
■260  1▼aAnn  Arbor▼bProQuest  Dissertations  &  Theses▼c2024
■300    ▼a138  p
■500    ▼aSource:  Dissertations  Abstracts  International,  Volume:  86-04,  Section:  B.
■500    ▼aAdvisor:  Manfra,  Michael  J.;Greene,  Christopher  H.;Banerjee,  Arnab;Vayrynen,  Jukka  I.
■5021  ▼aThesis  (Ph.D.)--Purdue  University,  2024.
■520    ▼aThe  two-dimensional  electron  gas  (2DEG)  in  shallow  InAs  quantum  wells,  combined  with  epitaxial  aluminum,  is  commonly  used  to  study  topological  superconductivity.  Key  features  include  strong  spin-orbit  coupling,  a  high  effective  g-factor,  and  the  ability  to  manage  proximity-induced  superconductivity.  My  thesis  discusses  two  aspects  of  this  unique  material.  In  the  first  section,  I  report  on  the  transport  characteristics  of  shallow  InGaAs/InAs/InGaAs  quantum  wells  and  evaluate  the  effect  of  modulation  doping  on  these  shallow  InAs  quantum  well  structures.  We  systematically  investigate  the  magnetotransport  properties  in  relation  to  doping  density  and  spacer  thickness.  Optimized  samples  show  peak  mobilities  exceeding  100,000  cm2/Vs  at  n2DEG    1012  cm-2in  gated  Hall  bar,  marking  the  highest  mobility  observed  in  this  type  of  heterostructure.  Our  findings  suggest  that  the  doping  layer  moves  the  electron  wave  function  away  from  the  surface,  minimizing  surface  scattering  and  enhancing  mobility.  This  mobility  improvement  does  not  compromise  Rashba  spin-orbit  coupling  or  induced  superconductivity.  In  the  second  section,  motivated  by  a  theoretical  study  by  Peng  et  al.,  we  explore  tunneling  spectroscopy  measurements  on  DC  current  biased  planar  Josephson  junctions  made  on  an  undoped  hybrid  epitaxial  Al-InAs  2DEG  heterostructure.  We  observe  four  tunneling  conductance  peaks  in  the  spectroscopy  that  can  be  adjusted  by  DC  current  bias.  Our  analysis  indicates  that  these  results  come  from  strong  coupling  between  the  tunneling  probe  and  the  superconducting  leads,  rather  than  from  Floquet  engineering.  We  also  touch  on  potential  improvements  to  the  device's  design  and  materials.  This  work  lays  the  groundwork  for  further  investigation  of  Floquet  physics  in  planar  Josephson  junctions.  This  thesis  ends  with  a  discussion  of  other  unusual  physics  that  could  be  explored  in  these  novel  shallow  InAs  quantum  wells  coupled  with  epitaxial  aluminum.
■590    ▼aSchool  code:  0183.
■650  4▼aEtching
■650  4▼aCrystal  structure
■650  4▼aAluminum
■650  4▼aMolecular  beam  epitaxy
■650  4▼aEnergy
■650  4▼aElectrons
■650  4▼aSuperconductivity
■650  4▼aNanowires
■650  4▼aSpectrum  analysis
■650  4▼aSemiconductors
■650  4▼aMagnetic  fields
■650  4▼aMicroscopy
■650  4▼aAnalytical  chemistry
■650  4▼aAtomic  physics
■650  4▼aElectromagnetics
■650  4▼aLow  temperature  physics
■650  4▼aNanotechnology
■650  4▼aOptics
■690    ▼a0791
■690    ▼a0486
■690    ▼a0748
■690    ▼a0607
■690    ▼a0598
■690    ▼a0652
■690    ▼a0752
■71020▼aPurdue  University.
■7730  ▼tDissertations  Abstracts  International▼g86-04B.
■790    ▼a0183
■791    ▼aPh.D.
■792    ▼a2024
■793    ▼aEnglish
■85640▼uhttp://www.riss.kr/pdu/ddodLink.do?id=T17162745▼nKERIS▼z이  자료의  원문은  한국교육학술정보원에서  제공합니다.

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