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Chemical Control of Semiconductor Surface: XPS and STM
Chemical Control of Semiconductor Surface: XPS and STM
Chemical Control of Semiconductor Surface: XPS and STM

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자료유형  
 학위논문 서양
최종처리일시  
20250211152716
ISBN  
9798384053668
DDC  
541
저자명  
Zhu, Qingyuan Amy.
서명/저자  
Chemical Control of Semiconductor Surface: XPS and STM
발행사항  
[Sl] : Cornell University, 2024
발행사항  
Ann Arbor : ProQuest Dissertations & Theses, 2024
형태사항  
104 p
주기사항  
Source: Dissertations Abstracts International, Volume: 86-03, Section: B.
주기사항  
Advisor: Hines, Melissa.
학위논문주기  
Thesis (Ph.D.)--Cornell University, 2024.
초록/해제  
요약The chemical and physical control of semiconductor surfaces is crucial for various applications, including the performance enhancement of field-effect transistors, photocatalysts, and photocathodes. Despite significant advancements, there remains a need for in-depth research on various surface processes and characteristics of semiconductors. This thesis concentrates on the surface control of semiconductor photocatalysts and photocathodes, utilizing X-ray photoelectron spectroscopy and scanning tunneling microscopy.Investigation into the surface fluorination mechanism of rutile TiO2 (110) was performed. A mechanism akin to the Cabrera-Mott theory was proposed, where fluorination reduces surface charge density and induces an electric field. This field causes Ti cations to migrate to the surface, where they react with XeF2 and O2. Surface fluorination results in an atomically clean and non-stick surface, both before and after water rinsing. Additionally, this fluorination reaction is photo-switchable due to the photocatalyzed removal of the TiO2 surface carboxylate layer.Furthermore, the development of a method to protect photocathodes with atomically thin coatings, such as single-layer graphene and hexagonal boron nitride, was discussed. The feasibility of this method was proved by fabricating protected Mg photocathodes and detecting photoelectrons through the graphene layer. However, extending this approach to protect Cs3Sb photocathodes presented challenges, including the creation of clean substrates for photocathode growth and the nucleation of Cs3Sb on graphene and hexagonal boron nitride. These challenges require further investigation.Additionally, the surface chemistry of CsI-activated GaAs was investigated. Contrary to the conventional "yo-yo" activation method, the most stable oxide of Cs, Cs2O, was absent from the surface after annealing. Cs suboxides, such as Cs2O2 and CsO2, which possess lower work functions than Cs2O, were present in the activation layer. This hypothesis suggests a promising activation method for GaAs, potentially avoiding the formation of high work function Cs2O.
일반주제명  
Physical chemistry
일반주제명  
Materials science
일반주제명  
Condensed matter physics
일반주제명  
Inorganic chemistry
일반주제명  
Analytical chemistry
키워드  
Photocatalyst
키워드  
Photocathode
키워드  
Scanning tunneling microscopy
키워드  
Semiconductors
키워드  
Surface science
키워드  
X-ray photoelectron spectroscopy
기타저자  
Cornell University Chemistry and Chemical Biology
기본자료저록  
Dissertations Abstracts International. 86-03B.
전자적 위치 및 접속  
로그인 후 원문을 볼 수 있습니다.

MARC

 008250123s2024        us                              c    eng  d
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■020    ▼a9798384053668
■035    ▼a(MiAaPQ)AAI31489133
■040    ▼aMiAaPQ▼cMiAaPQ
■0820  ▼a541
■1001  ▼aZhu,  Qingyuan  Amy.▼0(orcid)0000-0002-2607-1849
■24510▼aChemical  Control  of  Semiconductor  Surface:  XPS  and  STM
■260    ▼a[Sl]▼bCornell  University▼c2024
■260  1▼aAnn  Arbor▼bProQuest  Dissertations  &  Theses▼c2024
■300    ▼a104  p
■500    ▼aSource:  Dissertations  Abstracts  International,  Volume:  86-03,  Section:  B.
■500    ▼aAdvisor:  Hines,  Melissa.
■5021  ▼aThesis  (Ph.D.)--Cornell  University,  2024.
■520    ▼aThe  chemical  and  physical  control  of  semiconductor  surfaces  is  crucial  for  various  applications,  including  the  performance  enhancement  of  field-effect  transistors,  photocatalysts,  and  photocathodes.  Despite  significant  advancements,  there  remains  a  need  for  in-depth  research  on  various  surface  processes  and  characteristics  of  semiconductors.  This  thesis  concentrates  on  the  surface  control  of  semiconductor  photocatalysts  and  photocathodes,  utilizing  X-ray  photoelectron  spectroscopy  and  scanning  tunneling  microscopy.Investigation  into  the  surface  fluorination  mechanism  of  rutile  TiO2  (110)  was  performed.  A  mechanism  akin  to  the  Cabrera-Mott  theory  was  proposed,  where  fluorination  reduces  surface  charge  density  and  induces  an  electric  field.  This  field  causes  Ti  cations  to  migrate  to  the  surface,  where  they  react  with  XeF2  and  O2.  Surface  fluorination  results  in  an  atomically  clean  and  non-stick  surface,  both  before  and  after  water  rinsing.  Additionally,  this  fluorination  reaction  is  photo-switchable  due  to  the  photocatalyzed  removal  of  the  TiO2  surface  carboxylate  layer.Furthermore,  the  development  of  a  method  to  protect  photocathodes  with  atomically  thin  coatings,  such  as  single-layer  graphene  and  hexagonal  boron  nitride,  was  discussed.  The  feasibility  of  this  method  was  proved  by  fabricating  protected  Mg  photocathodes  and  detecting  photoelectrons  through  the  graphene  layer.  However,  extending  this  approach  to  protect  Cs3Sb  photocathodes  presented  challenges,  including  the  creation  of  clean substrates  for  photocathode  growth  and  the  nucleation  of  Cs3Sb  on  graphene  and  hexagonal  boron  nitride.  These  challenges  require  further  investigation.Additionally,  the  surface  chemistry  of  CsI-activated  GaAs  was  investigated.  Contrary  to  the  conventional  "yo-yo"  activation  method,  the  most  stable  oxide  of  Cs,  Cs2O,  was  absent  from  the  surface  after  annealing.  Cs  suboxides,  such  as  Cs2O2  and  CsO2,  which  possess  lower  work  functions  than  Cs2O,  were  present  in  the  activation  layer.  This  hypothesis  suggests  a  promising  activation  method  for  GaAs,  potentially  avoiding  the  formation  of  high  work  function  Cs2O.
■590    ▼aSchool  code:  0058.
■650  4▼aPhysical  chemistry
■650  4▼aMaterials  science
■650  4▼aCondensed  matter  physics
■650  4▼aInorganic  chemistry
■650  4▼aAnalytical  chemistry
■653    ▼aPhotocatalyst
■653    ▼aPhotocathode
■653    ▼aScanning  tunneling  microscopy
■653    ▼aSemiconductors
■653    ▼aSurface  science
■653    ▼aX-ray  photoelectron  spectroscopy
■690    ▼a0494
■690    ▼a0794
■690    ▼a0488
■690    ▼a0486
■690    ▼a0611
■71020▼aCornell  University▼bChemistry  and  Chemical  Biology.
■7730  ▼tDissertations  Abstracts  International▼g86-03B.
■790    ▼a0058
■791    ▼aPh.D.
■792    ▼a2024
■793    ▼aEnglish
■85640▼uhttp://www.riss.kr/pdu/ddodLink.do?id=T17163502▼nKERIS▼z이  자료의  원문은  한국교육학술정보원에서  제공합니다.

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