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Exciton-Polariton Complexes in Chip-Scale Cavity Quantum Electrodynamics: Localized Single-site Arrays and Color Centers
Exciton-Polariton Complexes in Chip-Scale Cavity Quantum Electrodynamics: Localized Single...
Exciton-Polariton Complexes in Chip-Scale Cavity Quantum Electrodynamics: Localized Single-site Arrays and Color Centers

상세정보

자료유형  
 학위논문 서양
최종처리일시  
20250211151940
ISBN  
9798382781419
DDC  
620.5
저자명  
Huang, Jiahui.
서명/저자  
Exciton-Polariton Complexes in Chip-Scale Cavity Quantum Electrodynamics: Localized Single-site Arrays and Color Centers
발행사항  
[Sl] : University of California, Los Angeles, 2024
발행사항  
Ann Arbor : ProQuest Dissertations & Theses, 2024
형태사항  
226 p
주기사항  
Source: Dissertations Abstracts International, Volume: 85-12, Section: B.
주기사항  
Advisor: Wong, Chee Wei.
학위논문주기  
Thesis (Ph.D.)--University of California, Los Angeles, 2024.
초록/해제  
요약Single photons are flying qubits which can carry quantum information over long distances with low decoherence. Integrated quantum photonics, which aims to generate, process, and detect single photons on tiny chips with minimum environment-induced decoherence essential for quantum information processing, has become the core of current quantum technology towards quantum computing, quantum communication, and quantum metrology. Such applications require material platforms which can support single photon emitters with suitable properties, such as high single-photon purity, lifetime-limited spectral linewidth. high indistinguishability, near-unitary state preparation efficiency, and near unitary quantum efficiency, etc. Decoherence induced by environmental charge fluctuation and phonon scattering are also important factors to be considered in semiconductor-based platforms. In addition, site controllability of single photon emitters to be placed at the designed location is required for reproducible fabrication of monolithic integrated quantum photonic devices in large scale with multiple single photon emitters. On the other hand, single photon emitters in the telecom band are beneficial for building metro scale quantum networks such that the computational power of induvial quantum processors can be scaled up using telecom fiber-based architecture.Site-controlled pyramidal InGaAs quantum dots system as single photon emitters enable placing many quantum dots at designed positions in photonic structures with nanometer scale precisions which provides great potential for large scale integrated quantum photonic devices. However, previous studies on such quantum dots embedded in photonic crystal cavities suffer from low cavity quality factor which limits its operation at the weak coupling regime. In this thesis, we improve the cavity quality factor up to 12,000 by red shifting the emission energy of the quantum dot to ~ 1.24 eV and optimizing the photonic crystal cavity design. We demonstrate the coexisting strong-weak (intermediate) coupling and onset of strong coupling regime. We reveal the role of phonon scattering and exciton dephasing during QD-cavity interactions and further demonstrate a Rabi-like oscillation of luminescence intensity and energy splitting between excitonic and photonic components which occurs only at small QD-cavity detuning and can be well reproduced by our cavity quantum electrodynamics modeling. It represents milestone for device optimization of such quantum dot systems to realize strong coupling regime with applications in coherent control of site-controlled quantum states for quantum information processing. We further explore multi-site-controlled quantum dots systems in a spatially extended cavity mode pattern such that the quantum dot emission exhibits novel spatial features linked to quantum mode interference which enables applications in optical switching for quantum information routing in monolithic integrated quantum photonic circuits. This thesis also explores using silicon color centers as single photon emitters considering its telecom emission wavelength and mature silicon-based integrated photonic and electronic platform. We explore T centers and transition-metal color centers for high-fidelity telecom spin-photon interfaces. We study the fabrication process of generating T centers and copper-related defects with reduced lattice distortion with their photophysics properties closer to ab initio calculations. The cryogenic photoluminescence and electron spin resonance studies on copper-related defects suggests its unpaired electrons as alternative candidates to T centers for high fidelity spin-photon interfaces.
일반주제명  
Nanotechnology
일반주제명  
Optics
일반주제명  
Physics
일반주제명  
Quantum physics
일반주제명  
Electrical engineering
키워드  
Cavity quantum electrodynamics
키워드  
Light-matter interaction
키워드  
Photoluminescence
키워드  
Pyramidal quantum dot
키워드  
Silicon color center
기타저자  
University of California, Los Angeles Electrical and Computer Engineering 0333
기본자료저록  
Dissertations Abstracts International. 85-12B.
전자적 위치 및 접속  
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MARC

 008250123s2024        us                              c    eng  d
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■006m          o    d                
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■020    ▼a9798382781419
■035    ▼a(MiAaPQ)AAI31302204
■040    ▼aMiAaPQ▼cMiAaPQ
■0820  ▼a620.5
■1001  ▼aHuang,  Jiahui.
■24510▼aExciton-Polariton  Complexes  in  Chip-Scale  Cavity  Quantum  Electrodynamics:  Localized  Single-site  Arrays  and  Color  Centers
■260    ▼a[Sl]▼bUniversity  of  California,  Los  Angeles▼c2024
■260  1▼aAnn  Arbor▼bProQuest  Dissertations  &  Theses▼c2024
■300    ▼a226  p
■500    ▼aSource:  Dissertations  Abstracts  International,  Volume:  85-12,  Section:  B.
■500    ▼aAdvisor:  Wong,  Chee  Wei.
■5021  ▼aThesis  (Ph.D.)--University  of  California,  Los  Angeles,  2024.
■520    ▼aSingle  photons  are  flying  qubits  which  can  carry  quantum  information  over  long  distances  with  low  decoherence.  Integrated  quantum  photonics,  which  aims  to  generate,  process,  and  detect  single  photons  on  tiny  chips  with  minimum  environment-induced  decoherence  essential  for  quantum  information  processing,  has  become  the  core  of  current  quantum  technology  towards  quantum  computing,  quantum  communication,  and  quantum  metrology.  Such  applications  require  material  platforms  which  can  support  single  photon  emitters  with  suitable  properties,  such  as  high  single-photon  purity,  lifetime-limited  spectral  linewidth.  high  indistinguishability,  near-unitary  state  preparation  efficiency,  and  near  unitary  quantum  efficiency,  etc.  Decoherence  induced  by  environmental  charge  fluctuation  and  phonon  scattering  are  also  important  factors  to  be  considered  in  semiconductor-based  platforms.  In  addition,  site  controllability  of  single  photon  emitters  to  be  placed  at  the  designed  location  is  required  for  reproducible  fabrication  of  monolithic  integrated  quantum  photonic  devices  in  large  scale  with  multiple  single  photon  emitters.  On  the  other  hand,  single  photon  emitters  in  the  telecom  band  are  beneficial  for  building  metro  scale  quantum  networks  such  that  the  computational  power  of  induvial  quantum  processors  can  be  scaled  up  using  telecom  fiber-based  architecture.Site-controlled  pyramidal  InGaAs  quantum  dots  system  as  single  photon  emitters  enable  placing  many  quantum  dots  at  designed  positions  in  photonic  structures  with  nanometer  scale  precisions  which  provides  great  potential  for  large  scale  integrated  quantum  photonic  devices.  However,  previous  studies  on  such  quantum  dots  embedded  in  photonic  crystal  cavities  suffer  from  low  cavity  quality  factor  which  limits  its  operation  at  the  weak  coupling  regime.  In  this  thesis,  we  improve  the  cavity  quality  factor  up  to  12,000  by  red  shifting  the  emission  energy  of  the  quantum  dot  to  ~  1.24  eV  and  optimizing  the  photonic  crystal  cavity  design.  We  demonstrate  the  coexisting  strong-weak  (intermediate)  coupling  and  onset  of  strong  coupling  regime.  We  reveal  the  role  of  phonon  scattering  and  exciton  dephasing  during  QD-cavity  interactions  and  further  demonstrate  a  Rabi-like  oscillation  of  luminescence  intensity  and  energy  splitting  between  excitonic  and  photonic  components  which  occurs  only  at  small  QD-cavity  detuning  and  can  be  well  reproduced  by  our  cavity  quantum  electrodynamics  modeling.  It  represents  milestone  for  device  optimization  of  such  quantum  dot  systems  to  realize  strong  coupling  regime  with  applications  in  coherent  control  of  site-controlled  quantum  states  for  quantum  information  processing.  We  further  explore  multi-site-controlled  quantum  dots  systems  in  a  spatially  extended  cavity  mode  pattern  such  that  the  quantum  dot  emission  exhibits  novel  spatial  features  linked  to  quantum  mode  interference  which  enables  applications  in  optical  switching  for  quantum  information  routing  in  monolithic  integrated  quantum  photonic  circuits.  This  thesis  also  explores  using  silicon  color  centers  as  single  photon  emitters  considering  its  telecom  emission  wavelength  and  mature  silicon-based  integrated  photonic  and  electronic  platform.  We  explore  T  centers  and  transition-metal  color  centers  for  high-fidelity  telecom  spin-photon  interfaces.  We  study  the  fabrication  process  of  generating  T  centers  and  copper-related  defects  with  reduced  lattice  distortion  with  their  photophysics  properties  closer  to  ab  initio  calculations.  The  cryogenic  photoluminescence  and  electron  spin  resonance  studies  on  copper-related  defects  suggests  its  unpaired  electrons  as  alternative  candidates  to  T  centers  for  high  fidelity  spin-photon  interfaces.
■590    ▼aSchool  code:  0031.
■650  4▼aNanotechnology
■650  4▼aOptics
■650  4▼aPhysics
■650  4▼aQuantum  physics
■650  4▼aElectrical  engineering
■653    ▼aCavity  quantum  electrodynamics
■653    ▼aLight-matter  interaction
■653    ▼aPhotoluminescence
■653    ▼aPyramidal  quantum  dot
■653    ▼aSilicon  color  center
■690    ▼a0652
■690    ▼a0752
■690    ▼a0605
■690    ▼a0544
■690    ▼a0599
■71020▼aUniversity  of  California,  Los  Angeles▼bElectrical  and  Computer  Engineering  0333.
■7730  ▼tDissertations  Abstracts  International▼g85-12B.
■790    ▼a0031
■791    ▼aPh.D.
■792    ▼a2024
■793    ▼aEnglish
■85640▼uhttp://www.riss.kr/pdu/ddodLink.do?id=T17162168▼nKERIS▼z이  자료의  원문은  한국교육학술정보원에서  제공합니다.

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