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Chalcogenide Microresonators for Near- and Mid-infrared Nonlinear Photonics
Chalcogenide Microresonators for Near- and Mid-infrared Nonlinear Photonics
Detailed Information
- 자료유형
- 학위논문 서양
- 최종처리일시
- 20250211151123
- ISBN
- 9798382717050
- DDC
- 535
- 저자명
- Xu, Bo.
- 서명/저자
- Chalcogenide Microresonators for Near- and Mid-infrared Nonlinear Photonics
- 발행사항
- [Sl] : University of Colorado at Boulder, 2024
- 발행사항
- Ann Arbor : ProQuest Dissertations & Theses, 2024
- 형태사항
- 106 p
- 주기사항
- Source: Dissertations Abstracts International, Volume: 85-11, Section: B.
- 주기사항
- Advisor: Gopinath, Juliet;Park, Wounjhang.
- 학위논문주기
- Thesis (Ph.D.)--University of Colorado at Boulder, 2024.
- 초록/해제
- 요약There is a great need for compact, broadband, high efficiency infrared light sources for numerous applications. Integrated nonlinear photonics based on chalcogenide glass microresonators offers a potential solution. Arsenic-free GeSbS and GeSbSe chalcogenides are known to have good transparency and high nonlinearity for both near- and mid-infrared. We present two dispersion engineered geometries of chalcogenide microresonators designed for micro-comb generation with state-of-the-art low-loss performance. We develop a thermal-reflow-assisted fabrication method that creates GeSbS reflowed wedge resonators with supreme surface roughness and quality factors exceeding 106. Our simulations of thin reflowed wedges show the ability to engineer the dispersion of whispering-gallery modes to overcome large material dispersion in near-infrared wavelength and achieve anomalous dispersion. We successfully fabricate the designed tightly confined reflow bump geometry and experimentally demonstrate an engineered flat anomalous dispersion of the TM00 optical mode. For near-infrared operation, we also design and fabricate low-loss dispersion engineered GeSbS waveguides and ring resonators intended for on-chip supercontinuum generation and frequency comb generation at near-infrared. We optimize the e-beam lithography and plasma etch fabrication processes and achieve a line-edge roughness of 1.1 nm on the etched waveguides and ring resonator devices. We report an intrinsic quality factor of 6.0 x 105 and propagation loss of 0.71 dB/cm from an air-clad GeSbS ring resonator. We calculate their estimated scattering loss based on experimentally measured roughness parameters and estimate a near-infrared absorption loss of 0.15 dB/cm for all devices. We also design and fabricate dispersion engineered GeSbS and GeSbSe on-chip waveguides and ring resonators intended for frequency comb generation at mid-infrared. We report a high intrinsic quality factor of 1.8 x 105 and propagation loss of 0.95 dB/cm at 3.6 µm wavelength from an air-clad GeSbS ring resonator on MgF2 substrate. We identify O-H stretch from surface adsorption of atmospheric water as the dominant cause of MIR loss in as-fabricated GeSbS resonators. We estimate a mid-infrared absorption loss of 0.89 dB/cm after substrate dehydration and post-fabrication dehydration. This absorption loss is likely caused by the remaining C-H and S-H contamination concentrated on GeSbS surfaces, as well as hydrogen impurities in bulk GeSbS glass. With an Al2O3 coating on GeSbS thin film right after evaporation and long time high temperature annealing of the evaporated film, we expect the TE00 mode ring resonator loss to be reduced to as low as 0.2 dB/cm for mid-infrared wavelength.
- 일반주제명
- Optics
- 일반주제명
- Physical chemistry
- 일반주제명
- Plasma physics
- 일반주제명
- Computational physics
- 키워드
- Chalcogenide
- 키워드
- Microresonators
- 기타저자
- University of Colorado at Boulder Physics
- 기본자료저록
- Dissertations Abstracts International. 85-11B.
- 전자적 위치 및 접속
- 로그인 후 원문을 볼 수 있습니다.
MARC
008250123s2024 us c eng d■001000017160834
■00520250211151123
■006m o d
■007cr#unu||||||||
■020 ▼a9798382717050
■035 ▼a(MiAaPQ)AAI31146805
■040 ▼aMiAaPQ▼cMiAaPQ
■0820 ▼a535
■1001 ▼aXu, Bo.▼0(orcid)0000-0003-0054-7180
■24510▼aChalcogenide Microresonators for Near- and Mid-infrared Nonlinear Photonics
■260 ▼a[Sl]▼bUniversity of Colorado at Boulder▼c2024
■260 1▼aAnn Arbor▼bProQuest Dissertations & Theses▼c2024
■300 ▼a106 p
■500 ▼aSource: Dissertations Abstracts International, Volume: 85-11, Section: B.
■500 ▼aAdvisor: Gopinath, Juliet;Park, Wounjhang.
■5021 ▼aThesis (Ph.D.)--University of Colorado at Boulder, 2024.
■520 ▼aThere is a great need for compact, broadband, high efficiency infrared light sources for numerous applications. Integrated nonlinear photonics based on chalcogenide glass microresonators offers a potential solution. Arsenic-free GeSbS and GeSbSe chalcogenides are known to have good transparency and high nonlinearity for both near- and mid-infrared. We present two dispersion engineered geometries of chalcogenide microresonators designed for micro-comb generation with state-of-the-art low-loss performance. We develop a thermal-reflow-assisted fabrication method that creates GeSbS reflowed wedge resonators with supreme surface roughness and quality factors exceeding 106. Our simulations of thin reflowed wedges show the ability to engineer the dispersion of whispering-gallery modes to overcome large material dispersion in near-infrared wavelength and achieve anomalous dispersion. We successfully fabricate the designed tightly confined reflow bump geometry and experimentally demonstrate an engineered flat anomalous dispersion of the TM00 optical mode. For near-infrared operation, we also design and fabricate low-loss dispersion engineered GeSbS waveguides and ring resonators intended for on-chip supercontinuum generation and frequency comb generation at near-infrared. We optimize the e-beam lithography and plasma etch fabrication processes and achieve a line-edge roughness of 1.1 nm on the etched waveguides and ring resonator devices. We report an intrinsic quality factor of 6.0 x 105 and propagation loss of 0.71 dB/cm from an air-clad GeSbS ring resonator. We calculate their estimated scattering loss based on experimentally measured roughness parameters and estimate a near-infrared absorption loss of 0.15 dB/cm for all devices. We also design and fabricate dispersion engineered GeSbS and GeSbSe on-chip waveguides and ring resonators intended for frequency comb generation at mid-infrared. We report a high intrinsic quality factor of 1.8 x 105 and propagation loss of 0.95 dB/cm at 3.6 µm wavelength from an air-clad GeSbS ring resonator on MgF2 substrate. We identify O-H stretch from surface adsorption of atmospheric water as the dominant cause of MIR loss in as-fabricated GeSbS resonators. We estimate a mid-infrared absorption loss of 0.89 dB/cm after substrate dehydration and post-fabrication dehydration. This absorption loss is likely caused by the remaining C-H and S-H contamination concentrated on GeSbS surfaces, as well as hydrogen impurities in bulk GeSbS glass. With an Al2O3 coating on GeSbS thin film right after evaporation and long time high temperature annealing of the evaporated film, we expect the TE00 mode ring resonator loss to be reduced to as low as 0.2 dB/cm for mid-infrared wavelength.
■590 ▼aSchool code: 0051.
■650 4▼aOptics
■650 4▼aPhysical chemistry
■650 4▼aPlasma physics
■650 4▼aComputational physics
■653 ▼aChalcogenide
■653 ▼aIntegrated photonics
■653 ▼aMicroresonators
■653 ▼aMid-infrared photonics
■653 ▼aNonlinear photonics
■690 ▼a0752
■690 ▼a0216
■690 ▼a0759
■690 ▼a0494
■71020▼aUniversity of Colorado at Boulder▼bPhysics.
■7730 ▼tDissertations Abstracts International▼g85-11B.
■790 ▼a0051
■791 ▼aPh.D.
■792 ▼a2024
■793 ▼aEnglish
■85640▼uhttp://www.riss.kr/pdu/ddodLink.do?id=T17160834▼nKERIS▼z이 자료의 원문은 한국교육학술정보원에서 제공합니다.
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