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Chalcogenide Microresonators for Near- and Mid-infrared Nonlinear Photonics
Chalcogenide Microresonators for Near- and Mid-infrared Nonlinear Photonics
Chalcogenide Microresonators for Near- and Mid-infrared Nonlinear Photonics

Detailed Information

자료유형  
 학위논문 서양
최종처리일시  
20250211151123
ISBN  
9798382717050
DDC  
535
저자명  
Xu, Bo.
서명/저자  
Chalcogenide Microresonators for Near- and Mid-infrared Nonlinear Photonics
발행사항  
[Sl] : University of Colorado at Boulder, 2024
발행사항  
Ann Arbor : ProQuest Dissertations & Theses, 2024
형태사항  
106 p
주기사항  
Source: Dissertations Abstracts International, Volume: 85-11, Section: B.
주기사항  
Advisor: Gopinath, Juliet;Park, Wounjhang.
학위논문주기  
Thesis (Ph.D.)--University of Colorado at Boulder, 2024.
초록/해제  
요약There is a great need for compact, broadband, high efficiency infrared light sources for numerous applications. Integrated nonlinear photonics based on chalcogenide glass microresonators offers a potential solution. Arsenic-free GeSbS and GeSbSe chalcogenides are known to have good transparency and high nonlinearity for both near- and mid-infrared. We present two dispersion engineered geometries of chalcogenide microresonators designed for micro-comb generation with state-of-the-art low-loss performance. We develop a thermal-reflow-assisted fabrication method that creates GeSbS reflowed wedge resonators with supreme surface roughness and quality factors exceeding 106. Our simulations of thin reflowed wedges show the ability to engineer the dispersion of whispering-gallery modes to overcome large material dispersion in near-infrared wavelength and achieve anomalous dispersion. We successfully fabricate the designed tightly confined reflow bump geometry and experimentally demonstrate an engineered flat anomalous dispersion of the TM00 optical mode. For near-infrared operation, we also design and fabricate low-loss dispersion engineered GeSbS waveguides and ring resonators intended for on-chip supercontinuum generation and frequency comb generation at near-infrared. We optimize the e-beam lithography and plasma etch fabrication processes and achieve a line-edge roughness of 1.1 nm on the etched waveguides and ring resonator devices. We report an intrinsic quality factor of 6.0 x 105 and propagation loss of 0.71 dB/cm from an air-clad GeSbS ring resonator. We calculate their estimated scattering loss based on experimentally measured roughness parameters and estimate a near-infrared absorption loss of 0.15 dB/cm for all devices. We also design and fabricate dispersion engineered GeSbS and GeSbSe on-chip waveguides and ring resonators intended for frequency comb generation at mid-infrared. We report a high intrinsic quality factor of 1.8 x 105 and propagation loss of 0.95 dB/cm at 3.6 µm wavelength from an air-clad GeSbS ring resonator on MgF2 substrate. We identify O-H stretch from surface adsorption of atmospheric water as the dominant cause of MIR loss in as-fabricated GeSbS resonators. We estimate a mid-infrared absorption loss of 0.89 dB/cm after substrate dehydration and post-fabrication dehydration. This absorption loss is likely caused by the remaining C-H and S-H contamination concentrated on GeSbS surfaces, as well as hydrogen impurities in bulk GeSbS glass. With an Al2O3 coating on GeSbS thin film right after evaporation and long time high temperature annealing of the evaporated film, we expect the TE00 mode ring resonator loss to be reduced to as low as 0.2 dB/cm for mid-infrared wavelength.
일반주제명  
Optics
일반주제명  
Physical chemistry
일반주제명  
Plasma physics
일반주제명  
Computational physics
키워드  
Chalcogenide
키워드  
Integrated photonics
키워드  
Microresonators
키워드  
Mid-infrared photonics
키워드  
Nonlinear photonics
기타저자  
University of Colorado at Boulder Physics
기본자료저록  
Dissertations Abstracts International. 85-11B.
전자적 위치 및 접속  
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MARC

 008250123s2024        us                              c    eng  d
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■020    ▼a9798382717050
■035    ▼a(MiAaPQ)AAI31146805
■040    ▼aMiAaPQ▼cMiAaPQ
■0820  ▼a535
■1001  ▼aXu,  Bo.▼0(orcid)0000-0003-0054-7180
■24510▼aChalcogenide  Microresonators  for  Near-  and  Mid-infrared  Nonlinear  Photonics
■260    ▼a[Sl]▼bUniversity  of  Colorado  at  Boulder▼c2024
■260  1▼aAnn  Arbor▼bProQuest  Dissertations  &  Theses▼c2024
■300    ▼a106  p
■500    ▼aSource:  Dissertations  Abstracts  International,  Volume:  85-11,  Section:  B.
■500    ▼aAdvisor:  Gopinath,  Juliet;Park,  Wounjhang.
■5021  ▼aThesis  (Ph.D.)--University  of  Colorado  at  Boulder,  2024.
■520    ▼aThere  is  a  great  need  for  compact,  broadband,  high  efficiency  infrared  light  sources  for  numerous  applications.  Integrated  nonlinear  photonics  based  on  chalcogenide  glass  microresonators  offers  a  potential  solution.  Arsenic-free  GeSbS  and  GeSbSe  chalcogenides  are  known  to  have  good  transparency  and  high  nonlinearity  for  both  near-  and  mid-infrared.  We  present  two  dispersion  engineered  geometries  of  chalcogenide  microresonators  designed  for  micro-comb  generation  with  state-of-the-art  low-loss  performance.  We  develop  a  thermal-reflow-assisted  fabrication  method  that  creates  GeSbS  reflowed  wedge  resonators  with  supreme  surface  roughness  and  quality  factors  exceeding  106.  Our  simulations  of  thin  reflowed  wedges  show  the  ability  to  engineer  the  dispersion  of  whispering-gallery  modes  to  overcome  large  material  dispersion  in  near-infrared  wavelength  and  achieve  anomalous  dispersion.  We  successfully  fabricate  the  designed  tightly  confined  reflow  bump  geometry  and  experimentally  demonstrate  an  engineered  flat  anomalous  dispersion  of  the  TM00  optical  mode.  For  near-infrared  operation,  we  also  design  and  fabricate  low-loss  dispersion  engineered  GeSbS  waveguides  and  ring  resonators  intended  for  on-chip  supercontinuum  generation  and  frequency  comb  generation  at  near-infrared.  We  optimize  the  e-beam  lithography  and  plasma  etch  fabrication  processes  and  achieve  a  line-edge  roughness  of  1.1  nm  on  the  etched  waveguides  and  ring  resonator  devices.  We  report  an  intrinsic  quality  factor  of  6.0  x  105  and  propagation  loss  of  0.71  dB/cm  from  an  air-clad  GeSbS  ring  resonator.  We  calculate  their  estimated  scattering  loss  based  on  experimentally  measured  roughness  parameters  and  estimate  a  near-infrared  absorption  loss  of  0.15  dB/cm  for  all  devices.  We  also  design  and  fabricate  dispersion  engineered  GeSbS  and  GeSbSe  on-chip  waveguides  and  ring  resonators  intended  for  frequency  comb  generation  at  mid-infrared.  We  report  a  high  intrinsic  quality  factor  of  1.8  x  105  and  propagation  loss  of  0.95  dB/cm  at  3.6  µm  wavelength  from  an  air-clad  GeSbS  ring  resonator  on  MgF2  substrate.  We  identify  O-H  stretch  from  surface  adsorption  of  atmospheric  water  as  the  dominant  cause  of  MIR  loss  in  as-fabricated  GeSbS  resonators.  We  estimate  a  mid-infrared  absorption  loss  of  0.89  dB/cm  after  substrate  dehydration  and  post-fabrication  dehydration.  This  absorption  loss  is  likely  caused  by  the  remaining  C-H  and  S-H  contamination  concentrated  on  GeSbS  surfaces,  as  well  as  hydrogen  impurities  in  bulk  GeSbS  glass.  With  an  Al2O3  coating  on  GeSbS  thin  film  right  after  evaporation  and  long  time  high  temperature  annealing  of  the  evaporated  film,  we  expect  the  TE00  mode  ring  resonator  loss  to  be  reduced  to  as  low  as  0.2  dB/cm  for  mid-infrared  wavelength.
■590    ▼aSchool  code:  0051.
■650  4▼aOptics
■650  4▼aPhysical  chemistry
■650  4▼aPlasma  physics
■650  4▼aComputational  physics
■653    ▼aChalcogenide
■653    ▼aIntegrated  photonics
■653    ▼aMicroresonators
■653    ▼aMid-infrared  photonics
■653    ▼aNonlinear  photonics
■690    ▼a0752
■690    ▼a0216
■690    ▼a0759
■690    ▼a0494
■71020▼aUniversity  of  Colorado  at  Boulder▼bPhysics.
■7730  ▼tDissertations  Abstracts  International▼g85-11B.
■790    ▼a0051
■791    ▼aPh.D.
■792    ▼a2024
■793    ▼aEnglish
■85640▼uhttp://www.riss.kr/pdu/ddodLink.do?id=T17160834▼nKERIS▼z이  자료의  원문은  한국교육학술정보원에서  제공합니다.

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