Designing Silicon Nanowire Geometric Diodes for High Frequency Rectification
Designing Silicon Nanowire Geometric Diodes for High Frequency Rectification
상세정보
- 자료유형
- 학위논문 서양
- 최종처리일시
- 20250211152039
- ISBN
- 9798383693537
- DDC
- 541
- 저자명
- White, Kelly L.
- 서명/저자
- Designing Silicon Nanowire Geometric Diodes for High Frequency Rectification
- 발행사항
- [Sl] : The University of North Carolina at Chapel Hill, 2024
- 발행사항
- Ann Arbor : ProQuest Dissertations & Theses, 2024
- 형태사항
- 146 p
- 주기사항
- Source: Dissertations Abstracts International, Volume: 86-02, Section: B.
- 주기사항
- Advisor: Cahoon, James F.;Geil, Robert D.
- 학위논문주기
- Thesis (Ph.D.)--The University of North Carolina at Chapel Hill, 2024.
- 초록/해제
- 요약Geometric diodes (GDs) represent an unconventional class of diode that use an asymmetric geometry to produce an asymmetric current response. Unlike most traditional diodes, they can rectify higher frequencies into the THz regime, enabling THz sensing, high-speed data processing, and long-wavelength energy harvesting. Silicon nanowire (NW) GDs-cylindrically symmetric but translationally asymmetric three-dimensional nanostructures-are capable of room-temperature operation with near zero-bias turn-on voltages. In this work, we aim to establish design principles for Si NW GDs through simulating and testing their ballistic and diffusive effects and work toward verifying Si NW GD THz operation.To elucidate the interplay between geometry and ballistic behavior, we develop a Monte Carlo simulation that describes the quasi-ballistic behavior of electrons within a NW GD. We examine effects of doping level, temperature, and geometry on charge carrier transport, revealing the relationships between charge carrier mean free path, specular reflection at surfaces, and geometry on GD performance. We find geometry strongly influences performance by directing or blocking charge carrier passage through the nanostructure and the blocking effect is at least as important as the directing effect.By fabricating three-terminal n-type Si NW GDs with axial contacts and an omega-gate electrode, we report a significant dependence of diode current and polarity on gate potential. Finite-element modeling reveals that the gate potential-in combination with the morphology and dopant profile-produces a reconfigurable self-switching diode effect. These devices define a new class of self-switching GDs (SSGDs) that can be realized in two and three-terminal configurations. Modeling demonstrates that these SSGDs support rectification through THz frequencies.Toward verification of Si NW GD THz operation, we design THz antennas and simulate rectenna devices. We find the geometry of the NW GD enhances rectenna performance by focusing the THz radiation within the antenna gap to the diode. This effect can be tuned with NW GD geometry and is maintained for diodes in series. We develop the single-NW device fabrication process to create THz rectenna devices and construct a free-space THz rectification measurement system. The results presented herein enable the design and testing of Si NW GDs as high frequency rectifiers.
- 일반주제명
- Physical chemistry
- 일반주제명
- Nanotechnology
- 일반주제명
- Materials science
- 키워드
- Geometric diodes
- 키워드
- Rectenna devices
- 키워드
- Silicon nanowire
- 기타저자
- The University of North Carolina at Chapel Hill Chemistry
- 기본자료저록
- Dissertations Abstracts International. 86-02B.
- 전자적 위치 및 접속
- 로그인 후 원문을 볼 수 있습니다.
MARC
008250123s2024 us c eng d■001000017162665
■00520250211152039
■006m o d
■007cr#unu||||||||
■020 ▼a9798383693537
■035 ▼a(MiAaPQ)AAI31336117
■040 ▼aMiAaPQ▼cMiAaPQ
■0820 ▼a541
■1001 ▼aWhite, Kelly L.
■24510▼aDesigning Silicon Nanowire Geometric Diodes for High Frequency Rectification
■260 ▼a[Sl]▼bThe University of North Carolina at Chapel Hill▼c2024
■260 1▼aAnn Arbor▼bProQuest Dissertations & Theses▼c2024
■300 ▼a146 p
■500 ▼aSource: Dissertations Abstracts International, Volume: 86-02, Section: B.
■500 ▼aAdvisor: Cahoon, James F.;Geil, Robert D.
■5021 ▼aThesis (Ph.D.)--The University of North Carolina at Chapel Hill, 2024.
■520 ▼aGeometric diodes (GDs) represent an unconventional class of diode that use an asymmetric geometry to produce an asymmetric current response. Unlike most traditional diodes, they can rectify higher frequencies into the THz regime, enabling THz sensing, high-speed data processing, and long-wavelength energy harvesting. Silicon nanowire (NW) GDs-cylindrically symmetric but translationally asymmetric three-dimensional nanostructures-are capable of room-temperature operation with near zero-bias turn-on voltages. In this work, we aim to establish design principles for Si NW GDs through simulating and testing their ballistic and diffusive effects and work toward verifying Si NW GD THz operation.To elucidate the interplay between geometry and ballistic behavior, we develop a Monte Carlo simulation that describes the quasi-ballistic behavior of electrons within a NW GD. We examine effects of doping level, temperature, and geometry on charge carrier transport, revealing the relationships between charge carrier mean free path, specular reflection at surfaces, and geometry on GD performance. We find geometry strongly influences performance by directing or blocking charge carrier passage through the nanostructure and the blocking effect is at least as important as the directing effect.By fabricating three-terminal n-type Si NW GDs with axial contacts and an omega-gate electrode, we report a significant dependence of diode current and polarity on gate potential. Finite-element modeling reveals that the gate potential-in combination with the morphology and dopant profile-produces a reconfigurable self-switching diode effect. These devices define a new class of self-switching GDs (SSGDs) that can be realized in two and three-terminal configurations. Modeling demonstrates that these SSGDs support rectification through THz frequencies.Toward verification of Si NW GD THz operation, we design THz antennas and simulate rectenna devices. We find the geometry of the NW GD enhances rectenna performance by focusing the THz radiation within the antenna gap to the diode. This effect can be tuned with NW GD geometry and is maintained for diodes in series. We develop the single-NW device fabrication process to create THz rectenna devices and construct a free-space THz rectification measurement system. The results presented herein enable the design and testing of Si NW GDs as high frequency rectifiers.
■590 ▼aSchool code: 0153.
■650 4▼aPhysical chemistry
■650 4▼aNanotechnology
■650 4▼aMaterials science
■653 ▼aBallistic rectifiers
■653 ▼aGeometric diodes
■653 ▼aRectenna devices
■653 ▼aSelf-switching diode effect
■653 ▼aSilicon nanowire
■690 ▼a0794
■690 ▼a0494
■690 ▼a0652
■71020▼aThe University of North Carolina at Chapel Hill▼bChemistry.
■7730 ▼tDissertations Abstracts International▼g86-02B.
■790 ▼a0153
■791 ▼aPh.D.
■792 ▼a2024
■793 ▼aEnglish
■85640▼uhttp://www.riss.kr/pdu/ddodLink.do?id=T17162665▼nKERIS▼z이 자료의 원문은 한국교육학술정보원에서 제공합니다.
