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Quantum Geometry and Localization in Crystalline and Disordered Solids
Quantum Geometry and Localization in Crystalline and Disordered Solids
Quantum Geometry and Localization in Crystalline and Disordered Solids

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자료유형  
 학위논문 서양
최종처리일시  
20260202105156
ISBN  
9798293883851
DDC  
530
저자명  
Komissarov, Ilia.
서명/저자  
Quantum Geometry and Localization in Crystalline and Disordered Solids
발행사항  
[Sl] : Columbia University, 2025
발행사항  
Ann Arbor : ProQuest Dissertations & Theses, 2025
형태사항  
205 p
주기사항  
Source: Dissertations Abstracts International, Volume: 87-03, Section: B.
주기사항  
Advisor: Queiroz, Raquel.
학위논문주기  
Thesis (Ph.D.)--Columbia University, 2025.
초록/해제  
요약We study the localization properties of electrons in solid-state systems, both with and without disorder. A key focus is to describe how the real-space extent of electronic eigenstates influences measurable physical quantities, such as the AC conductivity and dielectric properties. An essential link in this analysis, which connects microscopic localization and macroscopic responses, is the quantum metric - a geometric measure that quantifies the strength of dipole fluctuations in the many-electron ground state.In the first part of this thesis (Chapters 2 and 3), we study the quantum metric and the electric susceptibility (or capacitance), both analytically and numerically, across a diverse range of material systems, ranging from the microscale two-dimensional electron gases (2DEG) in magnetic fields to moire systems, and down to nanoscale conventional and topological insulators and semiconductors. This analysis reveals that the dielectric properties of matter can serve as diagnostics for certain correlated states (e.g., fractional quantum Hall phases) and exotic localization phenomena, such as the zero flux localization occurring in twisted bilayer graphene at the magic angle. Moreover, we propose that the relationship between the quantum metric and the dielectric constant can be instrumental in determining the dominant bonding character of the valence electrons (covalent vs. ionic) and even in detecting the non-trivial wavefunction topology.In the second part of the study (Chapters 4 and 5), we focus on Anderson insulators - materials where electrons are localized due to the destructive wavefunction self-interference induced by the presence of impurities. In these materials, hybridized pairs of localized eigenstates, known as Mott resonances, play a crucial role in the transport phenomena. We focus on investigating this mechanism in chiral disordered topological insulators, where we show that the hybridizing pairs of topological zero modes give rise to remarkable transport properties. In particular, in the chains with bond disorder, we identify the existence of an unusual "Anderson metal" phase, in which the electronic eigenstates appear localized yet exhibit finite DC conductivity. We also predict a novel phase, the superdielectric matter, characterized by a finite quantum metric (vanishing DC conductivity) and a divergent dielectric constant.Our work establishes the quantum metric and the hybridization analysis of disorder-localized eigenstates as crucial and unifying frameworks for understanding how the features of microscopic localization influence macroscopic observables, providing insight into how the transport properties of correlated, disordered, and topological systems can be efficiently studied.
일반주제명  
Physics
일반주제명  
Applied physics
일반주제명  
Quantum physics
키워드  
Disordered systems
키워드  
Hopping conductivity
키워드  
Quantum geometry
키워드  
Quantum phase transitions
키워드  
Topological materials
기타저자  
Columbia University Physics
기본자료저록  
Dissertations Abstracts International. 87-03B.
전자적 위치 및 접속  
로그인 후 원문을 볼 수 있습니다.

MARC

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■040    ▼aMiAaPQ▼cMiAaPQ
■0820  ▼a530
■1001  ▼aKomissarov,  Ilia.
■24510▼aQuantum  Geometry  and  Localization  in  Crystalline  and  Disordered  Solids
■260    ▼a[Sl]▼bColumbia  University▼c2025
■260  1▼aAnn  Arbor▼bProQuest  Dissertations  &  Theses▼c2025
■300    ▼a205  p
■500    ▼aSource:  Dissertations  Abstracts  International,  Volume:  87-03,  Section:  B.
■500    ▼aAdvisor:  Queiroz,  Raquel.
■5021  ▼aThesis  (Ph.D.)--Columbia  University,  2025.
■520    ▼aWe  study  the  localization  properties  of  electrons  in  solid-state  systems,  both  with  and  without  disorder.  A  key  focus  is  to  describe  how  the  real-space  extent  of  electronic  eigenstates  influences  measurable  physical  quantities,  such  as  the  AC  conductivity  and  dielectric  properties.  An  essential  link  in  this  analysis,  which  connects  microscopic  localization  and  macroscopic  responses,  is  the  quantum  metric  -  a  geometric  measure  that  quantifies  the  strength  of  dipole  fluctuations  in  the  many-electron  ground  state.In  the  first  part  of  this  thesis  (Chapters  2  and  3),  we  study  the  quantum  metric  and  the  electric  susceptibility  (or  capacitance),  both  analytically  and  numerically,  across  a  diverse  range  of  material  systems,  ranging  from  the  microscale  two-dimensional  electron  gases  (2DEG)  in  magnetic  fields  to  moire  systems,  and  down  to  nanoscale  conventional  and  topological  insulators  and  semiconductors.  This  analysis  reveals  that  the  dielectric  properties  of  matter  can  serve  as  diagnostics  for  certain  correlated  states  (e.g.,  fractional  quantum  Hall  phases)  and  exotic  localization  phenomena,  such  as  the  zero  flux  localization  occurring  in  twisted  bilayer  graphene  at  the  magic  angle.  Moreover,  we  propose  that  the  relationship  between  the  quantum  metric  and  the  dielectric  constant  can  be  instrumental  in  determining  the  dominant  bonding  character  of  the  valence  electrons  (covalent  vs.  ionic)  and  even  in  detecting  the  non-trivial  wavefunction  topology.In  the  second  part  of  the  study  (Chapters  4  and  5),  we  focus  on  Anderson  insulators  -  materials  where  electrons  are  localized  due  to  the  destructive  wavefunction  self-interference  induced  by  the  presence  of  impurities.  In  these  materials,  hybridized  pairs  of  localized  eigenstates,  known  as  Mott  resonances,  play  a  crucial  role  in  the  transport  phenomena.  We  focus  on  investigating  this  mechanism  in  chiral  disordered  topological  insulators,  where  we  show  that  the  hybridizing  pairs  of  topological  zero  modes  give  rise  to  remarkable  transport  properties.  In  particular,  in  the  chains  with  bond  disorder,  we  identify  the  existence  of  an  unusual  "Anderson  metal"  phase,  in  which  the  electronic  eigenstates  appear  localized  yet  exhibit  finite  DC  conductivity.  We  also  predict  a  novel  phase,  the  superdielectric  matter,  characterized  by  a  finite  quantum  metric  (vanishing  DC  conductivity)  and  a  divergent  dielectric  constant.Our  work  establishes  the  quantum  metric  and  the  hybridization  analysis  of  disorder-localized  eigenstates  as  crucial  and  unifying  frameworks  for  understanding  how  the  features  of  microscopic  localization  influence  macroscopic  observables,  providing  insight  into  how  the  transport  properties  of  correlated,  disordered,  and  topological  systems  can  be  efficiently  studied.
■590    ▼aSchool  code:  0054.
■650  4▼aPhysics
■650  4▼aApplied  physics
■650  4▼aQuantum  physics
■653    ▼aDisordered  systems
■653    ▼aHopping  conductivity
■653    ▼aQuantum  geometry
■653    ▼aQuantum  phase  transitions
■653    ▼aTopological  materials
■690    ▼a0605
■690    ▼a0599
■690    ▼a0215
■71020▼aColumbia  University▼bPhysics.
■7730  ▼tDissertations  Abstracts  International▼g87-03B.
■790    ▼a0054
■791    ▼aPh.D.
■792    ▼a2025
■793    ▼aEnglish
■85640▼uhttp://www.riss.kr/pdu/ddodLink.do?id=T17359672▼nKERIS▼z이  자료의  원문은  한국교육학술정보원에서  제공합니다.

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