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Fabrication and Characterization of Atomic Level Defects in hBN Using Electron and Ion Beam Microscopes
Fabrication and Characterization of Atomic Level Defects in hBN Using Electron and Ion Beam Microscopes
상세정보
- 자료유형
- 학위논문 서양
- 최종처리일시
- 20260202104846
- ISBN
- 9798297601093
- DDC
- 540
- 서명/저자
- Fabrication and Characterization of Atomic Level Defects in hBN Using Electron and Ion Beam Microscopes
- 발행사항
- [Sl] : University of California, Berkeley, 2025
- 발행사항
- Ann Arbor : ProQuest Dissertations & Theses, 2025
- 형태사항
- 125 p
- 주기사항
- Source: Dissertations Abstracts International, Volume: 87-04, Section: B.
- 주기사항
- Advisor: Minor, Andrew M.;Francis, Matthew B.
- 학위논문주기
- Thesis (Ph.D.)--University of California, Berkeley, 2025.
- 초록/해제
- 요약Vacancy defects in 2D materials offer a versatile pathway for engineering new functionalities on the nano- and atomic scale. This dissertation develops and applies advanced techniques for fabricating and characterizing such defects in 2D hexagonal boron nitride (hBN) using ion and electron beam microscopes.At the nanoscale, focused ion beam techniques leveraging neutral Ga cluster emission are used to fabricate vacancy defect clusters ("nanopores") in multilayer hBN, and at the atomic scale, a decoupled light ion seeding and electron-/thermally-assisted growth approach is used to fabricate four-atom vacancies ("tetravacancies") in monolayer hBN. In both cases, the techniques developed emphasize both throughput and control for size-selective membrane applications. The tetravacancy structures are particularly well suited for mechanosensitive ion transport due to their precise size and electrostatic environment. To asses the chemical structure of the defects, a broad-beam electron energy loss spectroscopy screening method is introduced, revealing distinct boron K-edge fine structure features that correlate with hBN defectivity, enabling defect identification in the delicate monolayer samples even in the presence of surface contamination.Finally, spatially resolved electron energy loss spectroscopy and electron ptychography are used to probe the edge structure of individual defects. Variations in microscope operating parameters highlight the sensitivity of defect structure to imaging conditions and distinct spectral differences reveal defect expansion leading to different edge terminations as a result. Together, the fabrication and advanced characterization approaches developed here offer a robust framework for advancing 2D materials toward the realization of tailored functionalities for next-generation devices and technologies.
- 일반주제명
- Chemistry
- 일반주제명
- Materials science
- 일반주제명
- Analytical chemistry
- 일반주제명
- Nanoscience
- 키워드
- 2D materials
- 키워드
- Defects
- 기타저자
- University of California, Berkeley Chemistry
- 기본자료저록
- Dissertations Abstracts International. 87-04B.
- 전자적 위치 및 접속
- 로그인 후 원문을 볼 수 있습니다.
MARC
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■006m o d
■007cr#unu||||||||
■020 ▼a9798297601093
■035 ▼a(MiAaPQ)AAI32173853
■040 ▼aMiAaPQ▼cMiAaPQ
■0820 ▼a540
■1001 ▼aByrne, Dana Orion.
■24510▼aFabrication and Characterization of Atomic Level Defects in hBN Using Electron and Ion Beam Microscopes
■260 ▼a[Sl]▼bUniversity of California, Berkeley▼c2025
■260 1▼aAnn Arbor▼bProQuest Dissertations & Theses▼c2025
■300 ▼a125 p
■500 ▼aSource: Dissertations Abstracts International, Volume: 87-04, Section: B.
■500 ▼aAdvisor: Minor, Andrew M.;Francis, Matthew B.
■5021 ▼aThesis (Ph.D.)--University of California, Berkeley, 2025.
■520 ▼aVacancy defects in 2D materials offer a versatile pathway for engineering new functionalities on the nano- and atomic scale. This dissertation develops and applies advanced techniques for fabricating and characterizing such defects in 2D hexagonal boron nitride (hBN) using ion and electron beam microscopes.At the nanoscale, focused ion beam techniques leveraging neutral Ga cluster emission are used to fabricate vacancy defect clusters ("nanopores") in multilayer hBN, and at the atomic scale, a decoupled light ion seeding and electron-/thermally-assisted growth approach is used to fabricate four-atom vacancies ("tetravacancies") in monolayer hBN. In both cases, the techniques developed emphasize both throughput and control for size-selective membrane applications. The tetravacancy structures are particularly well suited for mechanosensitive ion transport due to their precise size and electrostatic environment. To asses the chemical structure of the defects, a broad-beam electron energy loss spectroscopy screening method is introduced, revealing distinct boron K-edge fine structure features that correlate with hBN defectivity, enabling defect identification in the delicate monolayer samples even in the presence of surface contamination.Finally, spatially resolved electron energy loss spectroscopy and electron ptychography are used to probe the edge structure of individual defects. Variations in microscope operating parameters highlight the sensitivity of defect structure to imaging conditions and distinct spectral differences reveal defect expansion leading to different edge terminations as a result. Together, the fabrication and advanced characterization approaches developed here offer a robust framework for advancing 2D materials toward the realization of tailored functionalities for next-generation devices and technologies.
■590 ▼aSchool code: 0028.
■650 4▼aChemistry
■650 4▼aMaterials science
■650 4▼aAnalytical chemistry
■650 4▼aNanoscience
■653 ▼a2D materials
■653 ▼aDefects
■653 ▼aElectron energy loss spectroscopy (eels)
■653 ▼a2D hexagonal boron nitride
■653 ▼aIon beam microscopy
■653 ▼aTransmission electron microscopy
■690 ▼a0794
■690 ▼a0485
■690 ▼a0565
■690 ▼a0486
■71020▼aUniversity of California, Berkeley▼bChemistry.
■7730 ▼tDissertations Abstracts International▼g87-04B.
■790 ▼a0028
■791 ▼aPh.D.
■792 ▼a2025
■793 ▼aEnglish
■85640▼uhttp://www.riss.kr/pdu/ddodLink.do?id=T17359188▼nKERIS▼z이 자료의 원문은 한국교육학술정보원에서 제공합니다.
