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Design and Optimization of Integrated Plasmonic Devices for High-Performance Computing
Design and Optimization of Integrated Plasmonic Devices for High-Performance Computing
Design and Optimization of Integrated Plasmonic Devices for High-Performance Computing

상세정보

자료유형  
 학위논문 서양
최종처리일시  
20260202105546
ISBN  
9798263393861
DDC  
690
저자명  
Noor, Samantha Lubaba.
서명/저자  
Design and Optimization of Integrated Plasmonic Devices for High-Performance Computing
발행사항  
[Sl] : Georgia Institute of Technology, 2023
발행사항  
Ann Arbor : ProQuest Dissertations & Theses, 2023
형태사항  
136 p
주기사항  
Source: Dissertations Abstracts International, Volume: 87-05, Section: A.
주기사항  
Advisor: Naeemi, Azad.
학위논문주기  
Thesis (Ph.D.)--Georgia Institute of Technology, 2023.
초록/해제  
요약Plasmonics has opened a wealth of prospects in high-performance computing offering high throughput and dense integration capability. To realize plasmon-based computing, it is crucial to consider the interaction among the connected components and trade-offs among different performance parameters during the design process. However, research in this area has mainly focused on the design or demonstration of individual device components in isolation, and there has not been any systematic and comprehensive research effort considering the major aspects of a plasmonic computing system in a holistic approach. The doctoral thesis aims to design an integrated plasmonic computing system for high-end streaming server applications with optimized system-level performance, considering the trade-offs among footprint, throughput, latency, energy consumption, and thermal management.Augmenting complementary metal-oxide semiconductor (CMOS) processors with plasmonic computing modules in high-end servers offers the advantage of compact processor cores with exceptionally high clock rates. The high clock speed helps to reduce the massive number of cores needed in many streaming applications and, thereby, reducing the long interconnection wires that dominate the energy consumption in today's CMOS-based servers. The computing system designed in this thesis includes photonic to plasmonic mode converters to generate surface plasmon polariton waves, plasmonic phase modulators to encode data, a plasmonic logic gate for wave-computation, a plasmonic photodetector, and coupler between the WGs to convert the logic gate output to electrical signal. The system design and optimization also considers high-speed CMOS circuits for detecting the logic gate's output and driving the plasmonic phase modulator.The main element of the computing system is a plasmonic multi-functional logic gate that can perform non-Boolean majority and threshold logic operations along with Boolean operations. The gate operates on the interference of the incoming surface plasmon polariton (SPP) signal, resulting in multiple output levels. A multiplier structure is designed using the logic gate as a primitive, showing its application in arithmetic operations.To detect and differentiate different output levels of the logic gate, a plasmonic AlGe-Cu metal-semiconductor-metal detector is designed. Through numerical analysis, the performance of the Ge-based plasmonic detector is optimized considering the trade-off between responsivity and operation bandwidth. The designed detector offers a low dark current of a few nA, responsivity of 0.32A/W, and a bandwidth of ∼ 200GHz at only 100mV .To excite SPP for the computing system, photonic to plasmonic mode converters are designed numerically. Five different coupling approaches including the directional and end coupling of wire and Si slot photonic WGs with plasmonic metal-insulator-metal WGs have been explored. As the plasmonic logic gate is a multiple-input device, multiple mode converters and therefore, multiple Si photonic WGs are needed, which can largely penalize the total footprint due to significant mismatch between the pitch of the conventional Si WG and plasmonic MIM WG. As a result, the converter design and optimization include considerations such as the WG pitch, the total footprint along with the coupling efficiency. The design also considers arrangement of the photonic and plasmonic layer ensuring that there is negligible power coupling back to the photonic mode after SPP excitation. Simulation results show that the optimized mode conversion efficiency can be as high as 78%.To encode the input data for the plasmonic logic gate, a plasmonic phase shifter with nonlinear electro-optic slot material is analytically modeled using the coupled wave equation formalism for χ (2) nonlinear processes in lossy systems. The analytical model calculates the modulated and unmodulated signals at the output of the modulator. To find the design space of the phase shifter, such as its length, input optical power, and driving voltage, an integrated system consisting of the phase shifters, the plasmonic logic gate, the plasmonic detector, and the supporting CMOS circuits is designed.With the help of the phase shifter's analytical model and electromagnetic simulation of the connected devices, the BER of the integrated plasmonic devices is calculated. As Joule heating is common in plasmonic devices, and the nonlinear material of the phase shifter becomes unstable at ∼ 100oC, thermal analysis is performed using a 1-D thermal model to find the average temperature of the devices. A maximal but realistic BER of 10−3 and a driving voltage of 1V is taken as the limit. The length and driving voltage of the phase shifter are varied, and the input optical power is searched that maintains the target BER, and at the same time, does not heat the system to the extent of making the devices inoperable.
일반주제명  
Cooling
일반주제명  
Signal to noise ratio
일반주제명  
Wire
일반주제명  
Bandwidths
일반주제명  
Boolean
일반주제명  
Electric fields
일반주제명  
Chemical vapor deposition
일반주제명  
Circuits
일반주제명  
Supercomputers
일반주제명  
Design
일반주제명  
CMOS
일반주제명  
Transistors
일반주제명  
Optics
일반주제명  
Energy consumption
일반주제명  
High performance computing
일반주제명  
Computer science
일반주제명  
Electrical engineering
일반주제명  
Materials science
일반주제명  
Electromagnetics
기타저자  
Georgia Institute of Technology.
기본자료저록  
Dissertations Abstracts International. 87-05A.
전자적 위치 및 접속  
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MARC

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■1001  ▼aNoor,  Samantha  Lubaba.
■24510▼aDesign  and  Optimization  of  Integrated  Plasmonic  Devices  for  High-Performance  Computing
■260    ▼a[Sl]▼bGeorgia  Institute  of  Technology▼c2023
■260  1▼aAnn  Arbor▼bProQuest  Dissertations  &  Theses▼c2023
■300    ▼a136  p
■500    ▼aSource:  Dissertations  Abstracts  International,  Volume:  87-05,  Section:  A.
■500    ▼aAdvisor:  Naeemi,  Azad.
■5021  ▼aThesis  (Ph.D.)--Georgia  Institute  of  Technology,  2023.
■520    ▼aPlasmonics  has  opened  a  wealth  of  prospects  in  high-performance  computing  offering  high  throughput  and  dense  integration  capability.  To  realize  plasmon-based  computing,  it  is  crucial  to  consider  the  interaction  among  the  connected  components  and  trade-offs  among  different  performance  parameters  during  the  design  process.  However,  research  in  this  area  has  mainly  focused  on  the  design  or  demonstration  of  individual  device  components  in  isolation,  and  there  has  not  been  any  systematic  and  comprehensive  research  effort  considering  the  major  aspects  of  a  plasmonic  computing  system  in  a  holistic  approach.  The  doctoral  thesis  aims  to  design  an  integrated  plasmonic  computing  system  for  high-end  streaming  server  applications  with  optimized  system-level  performance,  considering  the  trade-offs  among  footprint,  throughput,  latency,  energy  consumption,  and  thermal  management.Augmenting  complementary  metal-oxide  semiconductor  (CMOS)  processors  with  plasmonic  computing  modules  in  high-end  servers  offers  the  advantage  of  compact  processor  cores  with  exceptionally  high  clock  rates.  The  high  clock  speed  helps  to  reduce  the  massive  number  of  cores  needed  in  many  streaming  applications  and,  thereby,  reducing  the  long  interconnection  wires  that  dominate  the  energy  consumption  in  today's  CMOS-based  servers.  The  computing  system  designed  in  this  thesis  includes  photonic  to  plasmonic  mode  converters  to  generate  surface  plasmon  polariton  waves,  plasmonic  phase  modulators  to  encode  data,  a  plasmonic  logic  gate  for  wave-computation,  a  plasmonic  photodetector,  and  coupler  between  the  WGs  to  convert  the  logic  gate  output  to  electrical  signal.  The  system  design  and  optimization  also  considers  high-speed  CMOS  circuits  for  detecting  the  logic  gate's  output  and  driving  the  plasmonic  phase  modulator.The  main  element  of  the  computing  system  is  a  plasmonic  multi-functional  logic  gate  that  can  perform  non-Boolean  majority  and  threshold  logic  operations  along  with  Boolean  operations.  The  gate  operates  on  the  interference  of  the  incoming  surface  plasmon  polariton  (SPP)  signal,  resulting  in  multiple  output  levels.  A  multiplier  structure  is  designed  using  the  logic  gate  as  a  primitive,  showing  its  application  in  arithmetic  operations.To  detect  and  differentiate  different  output  levels  of  the  logic  gate,  a  plasmonic  AlGe-Cu  metal-semiconductor-metal  detector  is  designed.  Through  numerical  analysis,  the  performance  of  the  Ge-based  plasmonic  detector  is  optimized  considering  the  trade-off  between  responsivity  and  operation  bandwidth.  The  designed  detector  offers  a  low  dark  current  of  a  few  nA,  responsivity  of  0.32A/W,  and  a  bandwidth  of  ∼  200GHz  at  only  100mV  .To  excite  SPP  for  the  computing  system,  photonic  to  plasmonic  mode  converters  are  designed  numerically.  Five  different  coupling  approaches  including  the  directional  and  end  coupling  of  wire  and  Si  slot  photonic  WGs  with  plasmonic  metal-insulator-metal  WGs  have  been  explored.  As  the  plasmonic  logic  gate  is  a  multiple-input  device,  multiple  mode  converters  and  therefore,  multiple  Si  photonic  WGs  are  needed,  which  can  largely  penalize  the  total  footprint  due  to  significant  mismatch  between  the  pitch  of  the  conventional  Si  WG  and  plasmonic  MIM  WG.  As  a  result,  the  converter  design  and  optimization  include  considerations  such  as  the  WG  pitch,  the  total  footprint  along  with  the  coupling  efficiency.  The  design  also  considers  arrangement  of  the  photonic  and  plasmonic  layer  ensuring  that  there  is  negligible  power  coupling  back  to  the  photonic  mode  after  SPP  excitation.  Simulation  results  show  that  the  optimized  mode  conversion  efficiency  can  be  as  high  as  78%.To  encode  the  input  data  for  the  plasmonic  logic  gate,  a  plasmonic  phase  shifter  with  nonlinear  electro-optic  slot  material  is  analytically  modeled  using  the  coupled  wave  equation  formalism  for  χ  (2)  nonlinear  processes  in  lossy  systems.  The  analytical  model  calculates  the  modulated  and  unmodulated  signals  at  the  output  of  the  modulator.  To  find  the  design  space  of  the  phase  shifter,  such  as  its  length,  input  optical  power,  and  driving  voltage,  an  integrated  system  consisting  of  the  phase  shifters,  the  plasmonic  logic  gate,  the  plasmonic  detector,  and  the  supporting  CMOS  circuits  is  designed.With  the  help  of  the  phase  shifter's  analytical  model  and  electromagnetic  simulation  of  the  connected  devices,  the  BER  of  the  integrated  plasmonic  devices  is  calculated.  As  Joule  heating  is  common  in  plasmonic  devices,  and  the  nonlinear  material  of  the  phase  shifter  becomes  unstable  at  ∼  100oC,  thermal  analysis  is  performed  using  a  1-D  thermal  model  to  find  the  average  temperature  of  the  devices.  A  maximal  but  realistic  BER  of  10−3  and  a  driving  voltage  of  1V  is  taken  as  the  limit.  The  length  and  driving  voltage  of  the  phase  shifter  are  varied,  and  the  input  optical  power  is  searched  that  maintains  the  target  BER,  and  at  the  same  time,  does  not  heat  the  system  to  the  extent  of  making  the  devices  inoperable.
■590    ▼aSchool  code:  0078.
■650  4▼aCooling
■650  4▼aSignal  to  noise  ratio
■650  4▼aWire
■650  4▼aBandwidths
■650  4▼aBoolean
■650  4▼aElectric  fields
■650  4▼aChemical  vapor  deposition
■650  4▼aCircuits
■650  4▼aSupercomputers
■650  4▼aDesign
■650  4▼aCMOS
■650  4▼aTransistors
■650  4▼aOptics
■650  4▼aEnergy  consumption
■650  4▼aHigh  performance  computing
■650  4▼aComputer  science
■650  4▼aElectrical  engineering
■650  4▼aMaterials  science
■650  4▼aElectromagnetics
■690    ▼a0389
■690    ▼a0752
■690    ▼a0984
■690    ▼a0544
■690    ▼a0794
■690    ▼a0607
■71020▼aGeorgia  Institute  of  Technology.
■7730  ▼tDissertations  Abstracts  International▼g87-05A.
■790    ▼a0078
■791    ▼aPh.D.
■792    ▼a2023
■793    ▼aEnglish
■85640▼uhttp://www.riss.kr/pdu/ddodLink.do?id=T17360553▼nKERIS▼z이  자료의  원문은  한국교육학술정보원에서  제공합니다.

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