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Strongly Correlated Excitons in Moire Semiconductors
Strongly Correlated Excitons in Moire Semiconductors
상세정보
- 자료유형
- 학위논문 서양
- 최종처리일시
- 20260202103116
- ISBN
- 9798286434558
- DDC
- 530
- 서명/저자
- Strongly Correlated Excitons in Moire Semiconductors
- 발행사항
- [Sl] : University of Maryland, College Park, 2025
- 발행사항
- Ann Arbor : ProQuest Dissertations & Theses, 2025
- 형태사항
- 65 p
- 주기사항
- Source: Dissertations Abstracts International, Volume: 86-12, Section: B.
- 주기사항
- Advisor: Hafezi, Mohammad.
- 학위논문주기
- Thesis (Ph.D.)--University of Maryland, College Park, 2025.
- 초록/해제
- 요약Moire transition metal dichalcogenide (TMD) bilayers have emerged as a versatile platform for exploring a wide range of correlated electronic phenomena. In optical studies of these semiconducting systems, excitons-bound electron-hole pairs-play a crucial role by linking electronic correlations to optical responses. This thesis develops theoretical frameworks to understand how excitonic behavior interplays with various correlated states in moire TMD bilayers and the resulting implications for optical measurements.We begin by investigating the interaction between a single moire exciton and Wigner crystal states formed by doped electrons. Focusing on systems with repulsive electron-exciton interactions, we discuss a scenario where excitons move within the complementary lattice of the charge-ordered electrons. As different Wigner crystal configurations emerge at specific electron filling fractions, the effective exciton lattice changes accordingly, giving rise to distinct spectral and topological features. These characteristics can serve as optical signatures of the underlying charge order, and we propose a momentum- and polarization-resolved reflection experiment to detect them.Next, we turn to undoped bilayers hosting multiple moire excitons. While prior work often models these systems using a Bose-Hubbard framework, we show that their commutation relations deviate from those of conventional bosons. Instead, the excitons obey algebra similar to that of angular momentum operators, resulting in a finite Hilbert space and limiting local exciton occupancy to two or three, depending on the bilayer's specific parameters. We demonstrate that this occupancy constraint could manifest in high-intensity optical pumping experiments.Finally, we explore exciton dynamics in a doped heterobilayer where the topmost valence moire band forms an antiferromagnetic Mott insulator. We present a theoretical model describing the coupling between the exciton and the spin background, revealing that spin fluctuations substantially narrow the exciton's effective bandwidth-by orders of magnitude compared to its non-interacting counterpart. This suppression in mobility provides a measurable contrast, which we suggest can be probed through exciton diffusion experiments.
- 일반주제명
- Condensed matter physics
- 일반주제명
- Optics
- 일반주제명
- Quantum physics
- 일반주제명
- Physics
- 키워드
- Excitons
- 기타저자
- University of Maryland, College Park Physics
- 기본자료저록
- Dissertations Abstracts International. 86-12B.
- 전자적 위치 및 접속
- 로그인 후 원문을 볼 수 있습니다.
MARC
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■00520260202103116
■006m o d
■007cr#unu||||||||
■020 ▼a9798286434558
■035 ▼a(MiAaPQ)AAI31937187
■040 ▼aMiAaPQ▼cMiAaPQ
■0820 ▼a530
■1001 ▼aHuang, Tsung-Sheng.▼0(orcid)0000-0002-4137-8988
■24510▼aStrongly Correlated Excitons in Moire Semiconductors
■260 ▼a[Sl]▼bUniversity of Maryland, College Park▼c2025
■260 1▼aAnn Arbor▼bProQuest Dissertations & Theses▼c2025
■300 ▼a65 p
■500 ▼aSource: Dissertations Abstracts International, Volume: 86-12, Section: B.
■500 ▼aAdvisor: Hafezi, Mohammad.
■5021 ▼aThesis (Ph.D.)--University of Maryland, College Park, 2025.
■520 ▼aMoire transition metal dichalcogenide (TMD) bilayers have emerged as a versatile platform for exploring a wide range of correlated electronic phenomena. In optical studies of these semiconducting systems, excitons-bound electron-hole pairs-play a crucial role by linking electronic correlations to optical responses. This thesis develops theoretical frameworks to understand how excitonic behavior interplays with various correlated states in moire TMD bilayers and the resulting implications for optical measurements.We begin by investigating the interaction between a single moire exciton and Wigner crystal states formed by doped electrons. Focusing on systems with repulsive electron-exciton interactions, we discuss a scenario where excitons move within the complementary lattice of the charge-ordered electrons. As different Wigner crystal configurations emerge at specific electron filling fractions, the effective exciton lattice changes accordingly, giving rise to distinct spectral and topological features. These characteristics can serve as optical signatures of the underlying charge order, and we propose a momentum- and polarization-resolved reflection experiment to detect them.Next, we turn to undoped bilayers hosting multiple moire excitons. While prior work often models these systems using a Bose-Hubbard framework, we show that their commutation relations deviate from those of conventional bosons. Instead, the excitons obey algebra similar to that of angular momentum operators, resulting in a finite Hilbert space and limiting local exciton occupancy to two or three, depending on the bilayer's specific parameters. We demonstrate that this occupancy constraint could manifest in high-intensity optical pumping experiments.Finally, we explore exciton dynamics in a doped heterobilayer where the topmost valence moire band forms an antiferromagnetic Mott insulator. We present a theoretical model describing the coupling between the exciton and the spin background, revealing that spin fluctuations substantially narrow the exciton's effective bandwidth-by orders of magnitude compared to its non-interacting counterpart. This suppression in mobility provides a measurable contrast, which we suggest can be probed through exciton diffusion experiments.
■590 ▼aSchool code: 0117.
■650 4▼aCondensed matter physics
■650 4▼aOptics
■650 4▼aQuantum physics
■650 4▼aPhysics
■653 ▼aExcitons
■653 ▼aLight-matter interaction
■653 ▼aMoire semiconductors
■653 ▼aStrongly correlated electrons
■690 ▼a0611
■690 ▼a0752
■690 ▼a0599
■690 ▼a0605
■71020▼aUniversity of Maryland, College Park▼bPhysics.
■7730 ▼tDissertations Abstracts International▼g86-12B.
■790 ▼a0117
■791 ▼aPh.D.
■792 ▼a2025
■793 ▼aEnglish
■85640▼uhttp://www.riss.kr/pdu/ddodLink.do?id=T17357011▼nKERIS▼z이 자료의 원문은 한국교육학술정보원에서 제공합니다.


