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Radiation Effects in SiGe BiCMOS Devices and Circuits Supporting Next-Generation Space Systems
Radiation Effects in SiGe BiCMOS Devices and Circuits Supporting Next-Generation Space Systems
상세정보
- 자료유형
- 학위논문 서양
- 최종처리일시
- 20260202105552
- ISBN
- 9798265401625
- DDC
- 621.3815
- 저자명
- Teng, Jeffrey W.
- 서명/저자
- Radiation Effects in SiGe BiCMOS Devices and Circuits Supporting Next-Generation Space Systems
- 발행사항
- [Sl] : Georgia Institute of Technology, 2023
- 발행사항
- Ann Arbor : ProQuest Dissertations & Theses, 2023
- 형태사항
- 126 p
- 주기사항
- Source: Dissertations Abstracts International, Volume: 87-05, Section: B.
- 주기사항
- Advisor: Cressler, John D.
- 학위논문주기
- Thesis (Ph.D.)--Georgia Institute of Technology, 2023.
- 초록/해제
- 요약The future of space missions will require more advanced electronics to enable commercial and scientific applications. To tolerate the intense radiation and wide range of temperatures experienced in space, SiGe BiCMOS technologies are excellent candidate platforms for supporting these applications.While SiGe BiCMOS technology has been well studied for over-temperature and radiation effects in the past, a few key aspects are missing, especially to meet modern demands. The present work demonstrates that the traditionally understood total ionizing dose (TID) tolerance of SiGe heterojunction bipolar transistors (HBTs) may not hold when one considers device-to-device mismatch due to statistical fluctuations in TID response. Additionally, to support missions in cryogenic environments (e.g., the Moon, Europa), SiGe HBTs are tested for TID under cryogenic operation. At the system level, to enable higher data bandwidths and RF/mm-wave operation, which are desirable in upcoming missions, the TID and displacement-damage dose (DDD) responses of silicon microwave pin diodes are evaluated for application in reconfigurable and tunable systems. Finally, along the same lines, the single-event transient (SET)-induced drop-out and recovery of microwave oscillators are studied. Colpitts oscillators were found to be more resilient to drop-out due to SETs compared to more common cross-coupled oscillators.The work on variability, pin diodes, and cryogenic TID response were presented in the IEEE Nuclear and Space Radiation Effects Conference (NSREC) in 2020, 2021, and 2022, respectively. All three works were extended to the IEEE Transactions on Nuclear Science [1, 2, 3] The work on microwave oscillators was submitted to NSREC 2023, pending a decision at the time of writing of this dissertation.
- 일반주제명
- Diodes
- 일반주제명
- Integrated circuits
- 일반주제명
- Space telescopes
- 일반주제명
- Electric fields
- 일반주제명
- Cosmic rays
- 일반주제명
- Oscillators
- 일반주제명
- Design
- 일반주제명
- Transistors
- 일반주제명
- Radiation
- 일반주제명
- Astronomy
- 일반주제명
- Electrical engineering
- 일반주제명
- Industrial engineering
- 일반주제명
- Optics
- 일반주제명
- Electromagnetics
- 기본자료저록
- Dissertations Abstracts International. 87-05B.
- 전자적 위치 및 접속
- 로그인 후 원문을 볼 수 있습니다.
MARC
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■020 ▼a9798265401625
■035 ▼a(MiAaPQ)AAI32315758
■035 ▼a(MiAaPQ)GeorgiaTech75088
■040 ▼aMiAaPQ▼cMiAaPQ
■0820 ▼a621.3815
■1001 ▼aTeng, Jeffrey W.
■24510▼aRadiation Effects in SiGe BiCMOS Devices and Circuits Supporting Next-Generation Space Systems
■260 ▼a[Sl]▼bGeorgia Institute of Technology▼c2023
■260 1▼aAnn Arbor▼bProQuest Dissertations & Theses▼c2023
■300 ▼a126 p
■500 ▼aSource: Dissertations Abstracts International, Volume: 87-05, Section: B.
■500 ▼aAdvisor: Cressler, John D.
■5021 ▼aThesis (Ph.D.)--Georgia Institute of Technology, 2023.
■520 ▼aThe future of space missions will require more advanced electronics to enable commercial and scientific applications. To tolerate the intense radiation and wide range of temperatures experienced in space, SiGe BiCMOS technologies are excellent candidate platforms for supporting these applications.While SiGe BiCMOS technology has been well studied for over-temperature and radiation effects in the past, a few key aspects are missing, especially to meet modern demands. The present work demonstrates that the traditionally understood total ionizing dose (TID) tolerance of SiGe heterojunction bipolar transistors (HBTs) may not hold when one considers device-to-device mismatch due to statistical fluctuations in TID response. Additionally, to support missions in cryogenic environments (e.g., the Moon, Europa), SiGe HBTs are tested for TID under cryogenic operation. At the system level, to enable higher data bandwidths and RF/mm-wave operation, which are desirable in upcoming missions, the TID and displacement-damage dose (DDD) responses of silicon microwave pin diodes are evaluated for application in reconfigurable and tunable systems. Finally, along the same lines, the single-event transient (SET)-induced drop-out and recovery of microwave oscillators are studied. Colpitts oscillators were found to be more resilient to drop-out due to SETs compared to more common cross-coupled oscillators.The work on variability, pin diodes, and cryogenic TID response were presented in the IEEE Nuclear and Space Radiation Effects Conference (NSREC) in 2020, 2021, and 2022, respectively. All three works were extended to the IEEE Transactions on Nuclear Science [1, 2, 3] The work on microwave oscillators was submitted to NSREC 2023, pending a decision at the time of writing of this dissertation.
■590 ▼aSchool code: 0078.
■650 4▼aDiodes
■650 4▼aIntegrated circuits
■650 4▼aSpace telescopes
■650 4▼aElectric fields
■650 4▼aCosmic rays
■650 4▼aOscillators
■650 4▼aDesign
■650 4▼aTransistors
■650 4▼aRadiation
■650 4▼aAstronomy
■650 4▼aElectrical engineering
■650 4▼aIndustrial engineering
■650 4▼aOptics
■650 4▼aElectromagnetics
■690 ▼a0389
■690 ▼a0606
■690 ▼a0544
■690 ▼a0546
■690 ▼a0752
■690 ▼a0607
■71020▼aGeorgia Institute of Technology.
■7730 ▼tDissertations Abstracts International▼g87-05B.
■790 ▼a0078
■791 ▼aPh.D.
■792 ▼a2023
■793 ▼aEnglish
■85640▼uhttp://www.riss.kr/pdu/ddodLink.do?id=T17360592▼nKERIS▼z이 자료의 원문은 한국교육학술정보원에서 제공합니다.
