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New Pathways to Topological Flat Bands and Fractional States in Moire Systems
New Pathways to Topological Flat Bands and Fractional States in Moire Systems
New Pathways to Topological Flat Bands and Fractional States in Moire Systems

상세정보

자료유형  
 학위논문 서양
최종처리일시  
20260202105230
ISBN  
9798291567166
DDC  
530
저자명  
Wan, Xiaohan.
서명/저자  
New Pathways to Topological Flat Bands and Fractional States in Moire Systems
발행사항  
[Sl] : University of Michigan, 2025
발행사항  
Ann Arbor : ProQuest Dissertations & Theses, 2025
형태사항  
265 p
주기사항  
Source: Dissertations Abstracts International, Volume: 87-03, Section: B.
주기사항  
Advisor: Sun, Kai.
학위논문주기  
Thesis (Ph.D.)--University of Michigan, 2025.
초록/해제  
요약The experimental realization of TBG and twisted transition metal dichalcogenides has drawn significant interest in the research of topological flat bands in the last few years. The interplay between strong interaction and topology leads to exotic phases; understanding these phases is fundamental to our understanding of condensed matter systems. In this thesis, I explore general requirements to have exact flat bands in moire systems, diversity of properties that these flat bands can manifest and unconventional many-body states that can appear in moire systems. First, we show strained graphene as a promising platform for strongly correlated quantum states. Specially, we investigate the conditions for topological flat bands to appear in both monolayer and bilayer graphene under moire periodic strain. For monolayer graphene, strain can be regarded as a gauge field. While in bilayer graphene, strain decomposes into two separate sectors: symmetric and antisymmetric (under inversion). In the antisymmetric sector, we find the simple gauge field treatment of strain field is not valid any more. We show that nearly flat Chern bands with almost ideal quantum geometry can appear in both stained monolayer and antisymmetric strained bilayer graphene. Next, we explore the effect of moire periodic strain field in a Γ-valley single layer system with a quadratic band crossing point. We discovered that there exist magic strain strength where the middle two bands become exactly flat at the chiral limit of our model, similar to the chiral limit of TBG. One key difference between chiral TBG and our model is in the fluctuation of Berry curvature in the moire Brillouin zone, the flat Chern bands in our system have much more uniform Berry curvature than those of chiral TBG, making them much closer to Landau levels, and thus it offers a new platform for the realization of FCIs. Third, we systematically classify all possible exact flat bands in single and bilayer systems with Dirac or quadratic band crossing points, revealing the symmetry and physical properties that dictate the number of exact flat bands and their topological indices. All known examples of exact flat bands in single and bilayer systems fall under this classification, including chiral TBG, and new examples of exact flat bands are found. We further show that, just like in TBG, topological heavy fermion description of the flat bands with higher degeneracy is possible as long as the Berry curvature distribution is peaked around a point in the moire Brillouin zone. Fourth, we present a new family of ideal topological flat bands where the wavefunction does not obey the holomorphic structure as in LLL. We provide both model examples and universal principles, as well as an analytic method to construct the wavefunctions of these flat bands, revealing their universal properties, including ideal quantum geometry and a Chern number of C = ±2 or higher. Finally, we show that even in the ideal quantum geometry limit, moire flat band systems can exhibit physical phenomena fundamentally different from Landau levels. In particular, we find new fractional quantum Hall states emerging from multi-band vortexable systems, where multiple exactly flat bands appear at the Fermi energy. We use analytic Bloch wavefunctions to uncover the origin of these unconventional fractional states, which arises from the commensurability between the moire unit cell and the magnetic unit cell of an emergent effective magnetic field.
일반주제명  
Physics
일반주제명  
Quantum physics
일반주제명  
Theoretical physics
키워드  
Topological flat bands
키워드  
Fractional Chern insulators
키워드  
Moire systems
키워드  
Graphene
키워드  
Wavefunctions
기타저자  
University of Michigan Physics
기본자료저록  
Dissertations Abstracts International. 87-03B.
전자적 위치 및 접속  
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MARC

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■0820  ▼a530
■1001  ▼aWan,  Xiaohan.
■24510▼aNew  Pathways  to  Topological  Flat  Bands  and  Fractional  States  in  Moire  Systems
■260    ▼a[Sl]▼bUniversity  of  Michigan▼c2025
■260  1▼aAnn  Arbor▼bProQuest  Dissertations  &  Theses▼c2025
■300    ▼a265  p
■500    ▼aSource:  Dissertations  Abstracts  International,  Volume:  87-03,  Section:  B.
■500    ▼aAdvisor:  Sun,  Kai.
■5021  ▼aThesis  (Ph.D.)--University  of  Michigan,  2025.
■520    ▼aThe  experimental  realization  of  TBG  and  twisted  transition  metal  dichalcogenides  has  drawn  significant  interest  in  the  research  of  topological  flat  bands  in  the  last  few  years.  The  interplay  between  strong  interaction  and  topology  leads  to  exotic  phases;  understanding  these  phases  is  fundamental  to  our  understanding  of  condensed  matter  systems.  In  this  thesis,  I  explore  general  requirements  to  have  exact  flat  bands  in  moire  systems,  diversity  of  properties  that  these  flat  bands  can  manifest  and  unconventional  many-body  states  that  can  appear  in  moire  systems.  First,  we  show  strained  graphene  as  a  promising  platform  for  strongly  correlated  quantum  states.  Specially,  we  investigate  the  conditions  for  topological  flat  bands  to  appear  in  both  monolayer  and  bilayer  graphene  under  moire  periodic  strain.  For  monolayer  graphene,  strain  can  be  regarded  as  a  gauge  field.  While  in  bilayer  graphene,  strain  decomposes  into  two  separate  sectors:  symmetric  and  antisymmetric  (under  inversion).  In  the  antisymmetric  sector,  we  find  the  simple  gauge  field  treatment  of  strain  field  is  not  valid  any  more.  We  show  that  nearly  flat  Chern  bands  with  almost  ideal  quantum  geometry  can  appear  in  both  stained  monolayer  and  antisymmetric  strained  bilayer  graphene.  Next,  we  explore  the  effect  of  moire  periodic  strain  field  in  a  Γ-valley  single  layer  system  with  a  quadratic  band  crossing  point.  We  discovered  that  there  exist  magic  strain  strength  where  the  middle  two  bands  become  exactly  flat  at  the  chiral  limit  of  our  model,  similar  to  the  chiral  limit  of  TBG.  One  key  difference  between  chiral  TBG  and  our  model  is  in  the  fluctuation  of  Berry  curvature  in  the  moire  Brillouin  zone,  the  flat  Chern  bands  in  our  system  have  much  more  uniform  Berry  curvature  than  those  of  chiral  TBG,  making  them  much  closer  to  Landau  levels,  and  thus  it  offers  a  new  platform  for  the  realization  of  FCIs.  Third,  we  systematically  classify  all  possible  exact  flat  bands  in  single  and  bilayer  systems  with  Dirac  or  quadratic  band  crossing  points,  revealing  the  symmetry  and  physical  properties  that  dictate  the  number  of  exact  flat  bands  and  their  topological  indices.  All  known  examples  of  exact  flat  bands  in  single  and  bilayer  systems  fall  under  this  classification,  including  chiral  TBG,  and  new  examples  of  exact  flat  bands  are  found.  We  further  show  that,  just  like  in  TBG,  topological  heavy  fermion  description  of  the  flat  bands  with  higher  degeneracy  is  possible  as  long  as  the  Berry  curvature  distribution  is  peaked  around  a  point  in  the  moire  Brillouin  zone.  Fourth,  we  present  a  new  family  of  ideal  topological  flat  bands  where  the  wavefunction  does  not  obey  the  holomorphic  structure  as  in  LLL.  We  provide  both  model  examples  and  universal  principles,  as  well  as  an  analytic  method  to  construct  the  wavefunctions  of  these  flat  bands,  revealing  their  universal  properties,  including  ideal  quantum  geometry  and  a  Chern  number  of  C  =  ±2  or  higher.  Finally,  we  show  that  even  in  the  ideal  quantum  geometry  limit,  moire  flat  band  systems  can  exhibit  physical  phenomena  fundamentally  different  from  Landau  levels.  In  particular,  we  find  new  fractional  quantum  Hall  states  emerging  from  multi-band  vortexable  systems,  where  multiple  exactly  flat  bands  appear  at  the  Fermi  energy.  We  use  analytic  Bloch  wavefunctions  to  uncover  the  origin  of  these  unconventional  fractional  states,  which  arises  from  the  commensurability  between  the  moire  unit  cell  and  the  magnetic  unit  cell  of  an  emergent  effective  magnetic  field.
■590    ▼aSchool  code:  0127.
■650  4▼aPhysics
■650  4▼aQuantum  physics
■650  4▼aTheoretical  physics
■653    ▼aTopological  flat  bands
■653    ▼aFractional  Chern  insulators
■653    ▼aMoire  systems
■653    ▼aGraphene
■653    ▼aWavefunctions
■690    ▼a0605
■690    ▼a0753
■690    ▼a0599
■71020▼aUniversity  of  Michigan▼bPhysics.
■7730  ▼tDissertations  Abstracts  International▼g87-03B.
■790    ▼a0127
■791    ▼aPh.D.
■792    ▼a2025
■793    ▼aEnglish
■85640▼uhttp://www.riss.kr/pdu/ddodLink.do?id=T17359878▼nKERIS▼z이  자료의  원문은  한국교육학술정보원에서  제공합니다.

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