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Process Control for Spatial Atomic Layer Deposition
Process Control for Spatial Atomic Layer Deposition
Process Control for Spatial Atomic Layer Deposition

상세정보

자료유형  
 학위논문 서양
최종처리일시  
20260202103643
ISBN  
9798314874202
DDC  
620.11
저자명  
Penley, Daniel G.
서명/저자  
Process Control for Spatial Atomic Layer Deposition
발행사항  
[Sl] : University of Michigan, 2025
발행사항  
Ann Arbor : ProQuest Dissertations & Theses, 2025
형태사항  
152 p
주기사항  
Source: Dissertations Abstracts International, Volume: 86-11, Section: B.
주기사항  
Advisor: Dasgupta, Neil P.
학위논문주기  
Thesis (Ph.D.)--University of Michigan, 2025.
초록/해제  
요약Within the semiconductor industry, interfacial engineering at the nanoscale has been developed to manufacture transistors with feature sizes on the order of single nanometers. As an integral technique for these advances, atomic layer deposition (ALD) is a thin-film deposition technique that boasts sub-nanometer control of the thickness and chemical composition of the deposited materials. However, it is challenging to translate the vacuum chambers and long process times of ALD processes into the manufacturing lines of large-scale applications, such as displays, batteries, solar cells, and catalysts. As a variation of conventional ALD, spatial atomic layer deposition (SALD) maintains the same precise deposition control while being a faster and more scalable technique. While many SALD system designs have been reported, few have demonstrated deposition on large, complex geometries, which are required for many applications. To help advance SALD into these large-scale commercial applications, this dissertation investigates the effects of process control on SALD systems through a mechatronic experimental system and a computational model to form the elements of a digital twin.The first focus of this thesis is the design and implementation of a novel, mechatronic SALD system to enable studies on the impact of process parameters on the deposited thin film. Sensors and actuators are used to actively maintain the gap size and parallel alignment during the deposition process through multiple-axis tilt and closed-loop feedback. Digital control of geometric process variables with active monitoring is facilitated with a custom software control package and user interface. SALD of titanium dioxide (TiO2) thin films is performed to validate self-limiting deposition with the system. A novel multi-axis printing methodology is introduced using x-y position control to define a customized motion path, which reduced variations in the film thickness from 8% to 2%.As the second focus, a 3D computational model that incorporates laminar-flow fluid mechanics and transport of diluted species is developed to provide insight into the velocity streamlines and partial-pressure distributions within the process region of a close-proximity SALD system. The outputs of this transport model are used as the inputs to a surface reaction model that simulates the self-limiting chemical reactions. These coupled models allow for prediction of the film thickness profiles as they evolve in time, based on a relative depositor/substrate motion path. Experimental validation and model parameterization are performed using our mechatronic SALD system, which enables the direct comparison of the simulated and experimentally measured geometry of deposited TiO2 films. Characteristic features in the film geometry are identified, and the model is used to reveal their physical and chemical origins. The influence of custom motion paths on the film geometry is also experimentally and computationally investigated.As the third focus, a reduced-order COMSOL Multiphysics® model is introduced that can predict the location of precursors in the process region. The model is used to validate the precursor location and consequential process quality during deposition. This can be of particular importance for substrate surfaces that are highly irregular or for manufacturing conditions where external factors such as temperature and ambient air speeds could change dynamically. The development of the model is discussed, and an initial experimental validation of the model is demonstrated.Overall, this thesis focuses on understanding and improving the process control of SALD so that nanoscale interfacial engineering can be implemented for a wide range industries and applications.
일반주제명  
Materials science
일반주제명  
Mechanical engineering
일반주제명  
Engineering
일반주제명  
Nanotechnology
키워드  
Spatial atomic layer deposition
키워드  
Nanomanufacturing
키워드  
Mechatronics
키워드  
Computational model
키워드  
Thin films
기타저자  
University of Michigan Mechanical Engineering
기본자료저록  
Dissertations Abstracts International. 86-11B.
전자적 위치 및 접속  
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MARC

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■0820  ▼a620.11
■1001  ▼aPenley,  Daniel  G.
■24510▼aProcess  Control  for  Spatial  Atomic  Layer  Deposition
■260    ▼a[Sl]▼bUniversity  of  Michigan▼c2025
■260  1▼aAnn  Arbor▼bProQuest  Dissertations  &  Theses▼c2025
■300    ▼a152  p
■500    ▼aSource:  Dissertations  Abstracts  International,  Volume:  86-11,  Section:  B.
■500    ▼aAdvisor:  Dasgupta,  Neil  P.
■5021  ▼aThesis  (Ph.D.)--University  of  Michigan,  2025.
■520    ▼aWithin  the  semiconductor  industry,  interfacial  engineering  at  the  nanoscale  has  been  developed  to  manufacture  transistors  with  feature  sizes  on  the  order  of  single  nanometers.  As  an  integral  technique  for  these  advances,  atomic  layer  deposition  (ALD)  is  a  thin-film  deposition  technique  that  boasts  sub-nanometer  control  of  the  thickness  and  chemical  composition  of  the  deposited  materials.  However,  it  is  challenging  to  translate  the  vacuum  chambers  and  long  process  times  of  ALD  processes  into  the  manufacturing  lines  of  large-scale  applications,  such  as  displays,  batteries,  solar  cells,  and  catalysts.  As  a  variation  of  conventional  ALD,  spatial  atomic  layer  deposition  (SALD)  maintains  the  same  precise  deposition  control  while  being  a  faster  and  more  scalable  technique.  While  many  SALD  system  designs  have  been  reported,  few  have  demonstrated  deposition  on  large,  complex  geometries,  which  are  required  for  many  applications.  To  help  advance  SALD  into  these  large-scale  commercial  applications,  this  dissertation  investigates  the  effects  of  process  control  on  SALD  systems  through  a  mechatronic  experimental  system  and  a  computational  model  to  form  the  elements  of  a  digital  twin.The  first  focus  of  this  thesis  is  the  design  and  implementation  of  a  novel,  mechatronic  SALD  system  to  enable  studies  on  the  impact  of  process  parameters  on  the  deposited  thin  film.  Sensors  and  actuators  are  used  to  actively  maintain  the  gap  size  and  parallel  alignment  during  the  deposition  process  through  multiple-axis  tilt  and  closed-loop  feedback.  Digital  control  of  geometric  process  variables  with  active  monitoring  is  facilitated  with  a  custom  software  control  package  and  user  interface.  SALD  of  titanium  dioxide  (TiO2)  thin  films  is  performed  to  validate  self-limiting  deposition  with  the  system.  A  novel  multi-axis  printing  methodology  is  introduced  using  x-y  position  control  to  define  a  customized  motion  path,  which  reduced  variations  in  the  film  thickness  from  8%  to  2%.As  the  second  focus,  a  3D  computational  model  that  incorporates  laminar-flow  fluid  mechanics  and  transport  of  diluted  species  is  developed  to  provide  insight  into  the  velocity  streamlines  and  partial-pressure  distributions  within  the  process  region  of  a  close-proximity  SALD  system.  The  outputs  of  this  transport  model  are  used  as  the  inputs  to  a  surface  reaction  model  that  simulates  the  self-limiting  chemical  reactions.  These  coupled  models  allow  for  prediction  of  the  film  thickness  profiles  as  they  evolve  in  time,  based  on  a  relative  depositor/substrate  motion  path.  Experimental  validation  and  model  parameterization  are  performed  using  our  mechatronic  SALD  system,  which  enables  the  direct  comparison  of  the  simulated  and  experimentally  measured  geometry  of  deposited  TiO2  films.  Characteristic  features  in  the  film  geometry  are  identified,  and  the  model  is  used  to  reveal  their  physical  and  chemical  origins.  The  influence  of  custom  motion  paths  on  the  film  geometry  is  also  experimentally  and  computationally  investigated.As  the  third  focus,  a  reduced-order  COMSOL  Multiphysics®  model  is  introduced  that  can  predict  the  location  of  precursors  in  the  process  region.  The  model  is  used  to  validate  the  precursor  location  and  consequential  process  quality  during  deposition.  This  can  be  of  particular  importance  for  substrate  surfaces  that  are  highly  irregular  or  for  manufacturing  conditions  where  external  factors  such  as  temperature  and  ambient  air  speeds  could  change  dynamically.  The  development  of  the  model  is  discussed,  and  an  initial  experimental  validation  of  the  model  is  demonstrated.Overall,  this  thesis  focuses  on  understanding  and  improving  the  process  control  of  SALD  so  that  nanoscale  interfacial  engineering  can  be  implemented  for  a  wide  range  industries  and  applications.
■590    ▼aSchool  code:  0127.
■650  4▼aMaterials  science
■650  4▼aMechanical  engineering
■650  4▼aEngineering
■650  4▼aNanotechnology
■653    ▼aSpatial  atomic  layer  deposition
■653    ▼aNanomanufacturing
■653    ▼aMechatronics
■653    ▼aComputational  model
■653    ▼aThin  films
■690    ▼a0548
■690    ▼a0794
■690    ▼a0652
■690    ▼a0537
■71020▼aUniversity  of  Michigan▼bMechanical  Engineering.
■7730  ▼tDissertations  Abstracts  International▼g86-11B.
■790    ▼a0127
■791    ▼aPh.D.
■792    ▼a2025
■793    ▼aEnglish
■85640▼uhttp://www.riss.kr/pdu/ddodLink.do?id=T17358095▼nKERIS▼z이  자료의  원문은  한국교육학술정보원에서  제공합니다.

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