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Interface Engineering of Silicon Nanowires for Solar Energy Applications
Interface Engineering of Silicon Nanowires for Solar Energy Applications
상세정보
- 자료유형
- 학위논문 서양
- 최종처리일시
- 20260202104824
- ISBN
- 9798270297930
- DDC
- 540
- 서명/저자
- Interface Engineering of Silicon Nanowires for Solar Energy Applications
- 발행사항
- [Sl] : The University of North Carolina at Chapel Hill, 2025
- 발행사항
- Ann Arbor : ProQuest Dissertations & Theses, 2025
- 형태사항
- 128 p
- 주기사항
- Source: Dissertations Abstracts International, Volume: 87-07, Section: B.
- 주기사항
- Advisor: Cahoon, James F.
- 학위논문주기
- Thesis (Ph.D.)--The University of North Carolina at Chapel Hill, 2025.
- 초록/해제
- 요약Silicon p-i-n superlattices are an innovative new photodiode that combines the enhanced properties of nanomaterials with the mechanisms and function of p-n junction photovoltaics. These materials, referred to as multijunction silicon nanowires (MJ SiNWs), can absorb light across the solar spectrum, produce tunable photovoltages, and have been demonstrated to perform in both device and suspension architectures. Thus, these materials enable a variety of next generation solar energy and solar fuel products. A key challenge to realizing viable NW-based solar technology is achieving high solar conversion efficiency. In this work, we aim to explore the mechanisms governing solar power conversion efficiency in MJ SiNWs in order to further develop these materials as photovoltaics and photocatalysts.Solar power conversion and solar-to-fuel conversion efficiencies are a product of the individual efficiencies of light absorption, charge carrier generation and separation, and, in the case of fuel generation, redox reactions. Here, we utilize a combination of experimental and computational methods to investigate charge carrier generation and separation efficiency in SiNWs with single and multiple p-i-n junctions. We explore the effects of doping, growth polarity, surface charge, and surface processing on charge carrier recombination and photovoltaic performance. We reveal the magnitude of material defects which makes studying these parameters challenging and find that charge carrier recombination is highly spatially dependent within the p-i-n junction.We explore methods to manipulate the internal and external composition of the NW via doping profiles, surface passivation, and VLS catalyst. Single NW photovoltaic devices, ultrafast pump-probe measurements, and electron microscopy reveals the origin and impact of defects resulting from the Au VLS catalyst. Through simulation, we construct gradient doping profiles that engineer the electric field to improve internal quantum efficiency and photovoltaic performance of a p-i-n junction. Extensive single NW analysis provides insight into quantitative and qualitative impacts of defect states on interfacial process development and charge carrier efficiency. This work develops a deeper understanding and appreciation of the intricacies of bottom-up synthesis of high-quality NW photodiodes. The results presented herein enable the design and fabrication of synthetically tunable, efficient p-i-n SiNW superlattices as photovoltaic and photocatalytic materials. .
- 일반주제명
- Chemistry
- 일반주제명
- Nanotechnology
- 일반주제명
- Materials science
- 키워드
- Microfabrication
- 키워드
- Photovoltaics
- 키워드
- Semiconductor
- 기타저자
- The University of North Carolina at Chapel Hill Chemistry
- 기본자료저록
- Dissertations Abstracts International. 87-07B.
- 전자적 위치 및 접속
- 로그인 후 원문을 볼 수 있습니다.
MARC
008260126s2025 us c eng d■001000017359030
■00520260202104824
■006m o d
■007cr#unu||||||||
■020 ▼a9798270297930
■035 ▼a(MiAaPQ)AAI32169621
■040 ▼aMiAaPQ▼cMiAaPQ
■0820 ▼a540
■1001 ▼aLitvin, Samantha Rose.
■24510▼aInterface Engineering of Silicon Nanowires for Solar Energy Applications
■260 ▼a[Sl]▼bThe University of North Carolina at Chapel Hill▼c2025
■260 1▼aAnn Arbor▼bProQuest Dissertations & Theses▼c2025
■300 ▼a128 p
■500 ▼aSource: Dissertations Abstracts International, Volume: 87-07, Section: B.
■500 ▼aAdvisor: Cahoon, James F.
■5021 ▼aThesis (Ph.D.)--The University of North Carolina at Chapel Hill, 2025.
■520 ▼aSilicon p-i-n superlattices are an innovative new photodiode that combines the enhanced properties of nanomaterials with the mechanisms and function of p-n junction photovoltaics. These materials, referred to as multijunction silicon nanowires (MJ SiNWs), can absorb light across the solar spectrum, produce tunable photovoltages, and have been demonstrated to perform in both device and suspension architectures. Thus, these materials enable a variety of next generation solar energy and solar fuel products. A key challenge to realizing viable NW-based solar technology is achieving high solar conversion efficiency. In this work, we aim to explore the mechanisms governing solar power conversion efficiency in MJ SiNWs in order to further develop these materials as photovoltaics and photocatalysts.Solar power conversion and solar-to-fuel conversion efficiencies are a product of the individual efficiencies of light absorption, charge carrier generation and separation, and, in the case of fuel generation, redox reactions. Here, we utilize a combination of experimental and computational methods to investigate charge carrier generation and separation efficiency in SiNWs with single and multiple p-i-n junctions. We explore the effects of doping, growth polarity, surface charge, and surface processing on charge carrier recombination and photovoltaic performance. We reveal the magnitude of material defects which makes studying these parameters challenging and find that charge carrier recombination is highly spatially dependent within the p-i-n junction.We explore methods to manipulate the internal and external composition of the NW via doping profiles, surface passivation, and VLS catalyst. Single NW photovoltaic devices, ultrafast pump-probe measurements, and electron microscopy reveals the origin and impact of defects resulting from the Au VLS catalyst. Through simulation, we construct gradient doping profiles that engineer the electric field to improve internal quantum efficiency and photovoltaic performance of a p-i-n junction. Extensive single NW analysis provides insight into quantitative and qualitative impacts of defect states on interfacial process development and charge carrier efficiency. This work develops a deeper understanding and appreciation of the intricacies of bottom-up synthesis of high-quality NW photodiodes. The results presented herein enable the design and fabrication of synthetically tunable, efficient p-i-n SiNW superlattices as photovoltaic and photocatalytic materials. .
■590 ▼aSchool code: 0153.
■650 4▼aChemistry
■650 4▼aNanotechnology
■650 4▼aMaterials science
■653 ▼aMicrofabrication
■653 ▼aMultijunction silicon nanowires
■653 ▼aPhotovoltaics
■653 ▼aSemiconductor
■653 ▼aSilicon nanowires
■690 ▼a0485
■690 ▼a0794
■690 ▼a0652
■71020▼aThe University of North Carolina at Chapel Hill▼bChemistry.
■7730 ▼tDissertations Abstracts International▼g87-07B.
■790 ▼a0153
■791 ▼aPh.D.
■792 ▼a2025
■793 ▼aEnglish
■85640▼uhttp://www.riss.kr/pdu/ddodLink.do?id=T17359030▼nKERIS▼z이 자료의 원문은 한국교육학술정보원에서 제공합니다.
