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Development and Fabrication of High Efficiency N-Type Tunnel Oxide Passivated Silicon Solar Cells with APCVD, ION Implanted, and BBr3 Boron Emitters
Development and Fabrication of High Efficiency N-Type Tunnel Oxide Passivated Silicon Sola...
Development and Fabrication of High Efficiency N-Type Tunnel Oxide Passivated Silicon Solar Cells with APCVD, ION Implanted, and BBr3 Boron Emitters

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자료유형  
 학위논문 서양
최종처리일시  
20260202105529
ISBN  
9798263345426
DDC  
546.73
저자명  
Madani, Keeya.
서명/저자  
Development and Fabrication of High Efficiency N-Type Tunnel Oxide Passivated Silicon Solar Cells with APCVD, ION Implanted, and BBr3 Boron Emitters
발행사항  
[Sl] : Georgia Institute of Technology, 2025
발행사항  
Ann Arbor : ProQuest Dissertations & Theses, 2025
형태사항  
223 p
주기사항  
Source: Dissertations Abstracts International, Volume: 87-05, Section: B.
주기사항  
Advisor: Rohatgi, Ajeet.
학위논문주기  
Thesis (Ph.D.)--Georgia Institute of Technology, 2025.
초록/해제  
요약The quality and availability of energy dictate the standard of living, but recent increase in energy consumption, primarily from fossil fuels, has led to significant CO2 emissions and climate change concerns. Earth temperature has already risen by ~1°C since 1950 and is projected to increase by 2.6°C by 2050 unless renewable energy sources are adopted. Among various options available today, photovoltaics (PV) is the most promising candidate due to its safety, scalability, and ability to directly convert virtually unlimited sunlight into electricity with minimal environmental impact. Over the past 15 years, PV module costs have dropped dramatically from ~$3/W to ~¢20/W, with global installations reaching ~1 TW in 2022 and projected to exceed 5 TW by 2030. However, PV currently accounts for only ~5% of electricity generation globally.To make PV the most widespread and cost-effective energy source, the U.S. Department of Energy has set a target to lower the levelized cost of electricity (LCOE) from PV to ≤ ¢3/kWh by 2030, which is about a factor of two cheaper than the average cost of electricity from fossil fuels. Achieving this requires advancements in PV module efficiency, degradation rates, lifetime, and cost. Silicon solar cells, which is the focus of this research, currently account for ~95% of PV modules produced and are well-suited to meet this target with further R&D and low-cost manufacturing.This research focuses on developing low-cost, high-efficiency (~23%) n-type silicon solar cells, using tunnel oxide passivated contacts (TOPCon) in combination with optimized boron-doped emitters, for cell performance enhancement without appreciably increasing cost. Introduction of TOPCon, featuring an ultra-thin tunnel oxide capped with doped polysilicon, significantly reduces recombination losses to enhance cell efficiency without introducing cost. At the start of this research, TOPCon cells were regarded as an emerging technology and laboratory curiosity, but now it commands 20% market share, projected to reach 60% by 2030.This thesis involves solar cell modelling and design, technology developments, fabrication, and characterization of commercial ready n-TOPCon solar cells. Furthermore, this thesis outlines a roadmap to improve our starting n-type baseline p+/n/n+ PERT cell efficiency from 20.5% to 23% by optimizing boron emitters on the front, implementing n-TOPCon on the rear, and refining screen-printed metal contacts. Techniques such as APCVD, ion implantation, and BBr3 doping are used for B emitter formation, while chemical oxidation of Si for tunnel oxide and LPCVD polysilicon deposition are employed for n-TOPCon development. Several technology developments are made and integrated into process sequences to achieve four types of commercial ready n-TOPCon solar cells involving different B emitters, with efficiencies approaching or exceeding 23%. Device modelling in combination with detailed characterization of these cells is used to understand the loss mechanisms and create a new technology roadmap to push the TOPCon cell efficiencies towards 25% at low-cost, setting the foundation for making PV the cheapest source of electricity.Chapter 1 introduces the scope of this research and outlines the specific tasks to accomplish the goal of reaching 23% efficient n-TOPCon solar cells with an emphasis on modelling, characterization, and fabrication. Chapter 2 explains the basic operating principles of silicon solar cells and outlines the modelling, characterization tools, and methods used in this research for designing and analyzing the fabricated solar cells.
일반주제명  
Boron
일반주제명  
Silicon nitride
일반주제명  
Phosphorus
일반주제명  
Electricity
일반주제명  
Oxidation
일반주제명  
Fossil fuels
일반주제명  
High temperature
일반주제명  
Chemical vapor deposition
일반주제명  
Design
일반주제명  
Silicon wafers
일반주제명  
Heat
일반주제명  
Ion implantation
일반주제명  
Alternative energy sources
일반주제명  
Screen printing
일반주제명  
Energy consumption
일반주제명  
Technology
일반주제명  
Annealing
일반주제명  
Alternative energy
일반주제명  
Condensed matter physics
일반주제명  
Materials science
일반주제명  
Thermodynamics
기타저자  
Georgia Institute of Technology.
기본자료저록  
Dissertations Abstracts International. 87-05B.
전자적 위치 및 접속  
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MARC

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■0820  ▼a546.73
■1001  ▼aMadani,  Keeya.
■24510▼aDevelopment  and  Fabrication  of  High  Efficiency  N-Type  Tunnel  Oxide  Passivated  Silicon  Solar  Cells  with  APCVD,  ION  Implanted,  and  BBr3  Boron  Emitters
■260    ▼a[Sl]▼bGeorgia  Institute  of  Technology▼c2025
■260  1▼aAnn  Arbor▼bProQuest  Dissertations  &  Theses▼c2025
■300    ▼a223  p
■500    ▼aSource:  Dissertations  Abstracts  International,  Volume:  87-05,  Section:  B.
■500    ▼aAdvisor:  Rohatgi,  Ajeet.
■5021  ▼aThesis  (Ph.D.)--Georgia  Institute  of  Technology,  2025.
■520    ▼aThe  quality  and  availability  of  energy  dictate  the  standard  of  living,  but  recent  increase  in  energy  consumption,  primarily  from  fossil  fuels,  has  led  to  significant  CO2  emissions  and  climate  change  concerns.  Earth  temperature  has  already  risen  by  ~1°C  since  1950  and  is  projected  to  increase  by  2.6°C  by  2050  unless  renewable  energy  sources  are  adopted.  Among  various  options  available  today,  photovoltaics  (PV)  is  the  most  promising  candidate  due  to  its  safety,  scalability,  and  ability  to  directly  convert  virtually  unlimited  sunlight  into  electricity  with  minimal  environmental  impact.  Over  the  past  15  years,  PV  module  costs  have  dropped  dramatically  from  ~$3/W  to  ~¢20/W,  with  global  installations  reaching  ~1  TW  in  2022  and  projected  to  exceed  5  TW  by  2030.  However,  PV  currently  accounts  for  only  ~5%  of  electricity  generation  globally.To  make  PV  the  most  widespread  and  cost-effective  energy  source,  the  U.S.  Department  of  Energy  has  set  a  target  to  lower  the  levelized  cost  of  electricity  (LCOE)  from  PV  to  ≤  ¢3/kWh  by  2030,  which  is  about  a  factor  of  two  cheaper  than  the  average  cost  of  electricity  from  fossil  fuels.  Achieving  this  requires  advancements  in  PV  module  efficiency,  degradation  rates,  lifetime,  and  cost.  Silicon  solar  cells,  which  is  the  focus  of  this  research,  currently  account  for  ~95%  of  PV  modules  produced  and  are  well-suited  to  meet  this  target  with  further  R&D  and  low-cost  manufacturing.This  research  focuses  on  developing  low-cost,  high-efficiency  (~23%)  n-type  silicon  solar  cells,  using  tunnel  oxide  passivated  contacts  (TOPCon)  in  combination  with  optimized  boron-doped  emitters,  for  cell  performance  enhancement  without  appreciably  increasing  cost.  Introduction  of  TOPCon,  featuring  an  ultra-thin  tunnel  oxide  capped  with  doped  polysilicon,  significantly  reduces  recombination  losses  to  enhance  cell  efficiency  without  introducing  cost.  At  the  start  of  this  research,  TOPCon  cells  were  regarded  as  an  emerging  technology  and  laboratory  curiosity,  but  now  it  commands    20%  market  share,  projected  to  reach  60%  by  2030.This  thesis  involves  solar  cell  modelling  and  design,  technology  developments,  fabrication,  and  characterization  of  commercial  ready  n-TOPCon  solar  cells.  Furthermore,  this  thesis  outlines  a  roadmap  to  improve  our  starting  n-type  baseline  p+/n/n+  PERT  cell  efficiency  from  20.5%  to  23%  by  optimizing  boron  emitters  on  the  front,  implementing  n-TOPCon  on  the  rear,  and  refining  screen-printed  metal  contacts.  Techniques  such  as  APCVD,  ion  implantation,  and  BBr3  doping  are  used  for  B  emitter  formation,  while  chemical  oxidation  of  Si  for  tunnel  oxide  and  LPCVD  polysilicon  deposition  are  employed  for  n-TOPCon  development.  Several  technology  developments  are  made  and  integrated  into  process  sequences  to  achieve  four  types  of  commercial  ready  n-TOPCon  solar  cells  involving  different  B  emitters,  with  efficiencies  approaching  or  exceeding  23%.  Device  modelling  in  combination  with  detailed  characterization  of  these  cells  is  used  to  understand  the  loss  mechanisms  and  create  a  new  technology  roadmap  to  push  the  TOPCon  cell  efficiencies  towards  25%  at  low-cost,  setting  the  foundation  for  making  PV  the  cheapest  source  of  electricity.Chapter  1  introduces  the  scope  of  this  research  and  outlines  the  specific  tasks  to  accomplish  the  goal  of  reaching  23%  efficient  n-TOPCon  solar  cells  with  an  emphasis  on  modelling,  characterization,  and  fabrication.  Chapter  2  explains  the  basic  operating  principles  of  silicon  solar  cells  and  outlines  the  modelling,  characterization  tools,  and  methods  used  in  this  research  for  designing  and  analyzing  the  fabricated  solar  cells.
■590    ▼aSchool  code:  0078.
■650  4▼aBoron
■650  4▼aSilicon  nitride
■650  4▼aPhosphorus
■650  4▼aElectricity
■650  4▼aOxidation
■650  4▼aFossil  fuels
■650  4▼aHigh  temperature
■650  4▼aChemical  vapor  deposition
■650  4▼aDesign
■650  4▼aSilicon  wafers
■650  4▼aHeat
■650  4▼aIon  implantation
■650  4▼aAlternative  energy  sources
■650  4▼aScreen  printing
■650  4▼aEnergy  consumption
■650  4▼aTechnology
■650  4▼aAnnealing
■650  4▼aAlternative  energy
■650  4▼aCondensed  matter  physics
■650  4▼aMaterials  science
■650  4▼aThermodynamics
■690    ▼a0389
■690    ▼a0363
■690    ▼a0611
■690    ▼a0794
■690    ▼a0348
■71020▼aGeorgia  Institute  of  Technology.
■7730  ▼tDissertations  Abstracts  International▼g87-05B.
■790    ▼a0078
■791    ▼aPh.D.
■792    ▼a2025
■793    ▼aEnglish
■85640▼uhttp://www.riss.kr/pdu/ddodLink.do?id=T17360458▼nKERIS▼z이  자료의  원문은  한국교육학술정보원에서  제공합니다.

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