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Mo-Si-B Coatings for Protection of SiC-Based Materials in High Temperature Active Oxidation Environments
Mo-Si-B Coatings for Protection of SiC-Based Materials in High Temperature Active Oxidation Environments
Detailed Information
- 자료유형
- 학위논문 서양
- 최종처리일시
- 20260202104830
- ISBN
- 9798290917290
- DDC
- 620
- 서명/저자
- Mo-Si-B Coatings for Protection of SiC-Based Materials in High Temperature Active Oxidation Environments
- 발행사항
- [Sl] : The University of Wisconsin - Madison, 2025
- 발행사항
- Ann Arbor : ProQuest Dissertations & Theses, 2025
- 형태사항
- 152 p
- 주기사항
- Source: Dissertations Abstracts International, Volume: 87-02, Section: B.
- 주기사항
- Advisor: Perepezko, John H.
- 학위논문주기
- Thesis (Ph.D.)--The University of Wisconsin - Madison, 2025.
- 초록/해제
- 요약Recent interest in achieving sustained hypersonic flight and re-useable hypersonic vehicles have required testing and development of new leading-edge materials that can be used in more and more extreme environments - such as temperatures over 1800°C with variable oxygen potentials. Current materials for hypersonic applications are either ablative, like carbon fiber blankets, or do not produce stable oxides, such Hf and Zr boride and carbides. In order to survive multiple longterm flights, new materials with stable oxides and low rate constants must be developed. SiC and SiC composites can achieve this by forming a passive SiO2 protective layer but are limited to temperatures below 1600°C or lower due to active oxidation. Active oxidation is a mechanism in which silica forming materials form a volatile oxide, SiO, causing rapid erosion of the substrate material. Most studies on active oxidation focus on SiC and there is limited information on other silica forming materials. Because of this, there is a gap in knowledge on the mechanisms behind active oxidation of other silica forming materials, and they are often overlooked as a class of materials only because this phenomenon is not fully understood. To address this limitation, this thesis investigates the active oxidation behavior of Mo-Si-B coatings, as well as explores the viability of a Mo-Si-B coating on SiC. Initial work showed that Mo-silicides can be used at a higher temperature and lower Po2 than SiC and still form a stable oxide. However, no work was done to fully understand why or how changing the SiO2 composition could affect this. Initially Mo-Si-B coatings were tested directly against SiC in active oxidation conditions (1500°C and Po2=10-4 atm) to better understand the re-passivation mechanism. While active oxidation was observed for the coating, it showed superior performance to the SiC. After 20 hours of exposure, the coating gained 0.6 mg/cm2 , while SiC lost over 67 mg/cm2 . The Mo-Si-B coating underwent active oxidation until enough Si was lost so that Mo5Si3 and Mo3Si formed as the primary phases, and SiO2 became the stable oxide once again. This re-stabilization behavior allows the Mo-silicide coating to have protection from active oxidation at a lower Po2 than SiC. A thermodynamic analysis is presented to explain why the Mo-silicides have a larger range of operation than SiC.The active oxidation behavior of Mo-silicide coatings was analyzed for four compositions: without additives, with Al, with B, and with both Al and B additives in the SiO2 scale. The coatings were tested at 1500°C and Po2=10-4 atm for durations of 2, 4, 6, 8, and 20 hours. After 20 hours, each coating consisted of a thick SiO2 layer, followed by Mo5Si3, and no MoSi2 which was the primary phase before exposure. The temperature and Po2 studied exceeded the passive-to-active transition of MoSi2, but not for Mo5Si3. A thermodynamic analysis was conducted to determine the passive-to-active transition for all MoSi2, Mo5Si3, and Mo3Si. Additionally, modifications were made for additives in SiO2, which explains why little difference was seen in the final microstructure of each coating. The model suggests that a dramatic reduction in SiO2 activity can substantially lower the passive-to-active transition temperature in silica forming materials. In order to determine the feasibility of a Mo-Si-B coating on SiC, a diffusion couple experiment of Mo5SiB2 (T2) and SiC in contact was conducted at 1700°C for 150 hours. The post-anneal bonded interface was examined by high-resolution scanning transmission electron microscopy (STEM). The results show no formation of other compounds between the two phases, to indicate that T2 and SiC are in thermodynamic equilibrium. A CALPHAD model phase diagram of T2 in contact with SiC shows the predicted formation of MoB, Mo2BC, and Mo5Si3C phases that were not seen. The discrepancy between the model prediction and the observed equilibria was due to the T2 phase being treated as a line compound, when it really contains a homogeneity range. When accounting for the T2 compositional variance, the model matched the experimental results. This was further confirmed by melting a Mo-Si-B-C alloy and annealing at 1700℃ for 150 hours, which showed a microstructure of T2, SiC, Mo5Si3C, and MoB phases that matched the predicted phase equilibria in the improved thermodynamic model.Finally, a Mo-Si-B coating was applied to SiC and tested in an active oxidation environment of 1450°C and Po2 = 10-4 atm. The coating process includes: 1) application of a Mo precoat using pressureless sintering, 2) deposition of Si or Si and B by pack cementation, 3) high temperature oxidation in air to form a passive SiO2 layer. After 10 hours of active oxidation exposure, uncoated SiC lost 20.15 mg/cm2 and showed a noticeable reduction in size, while the coated SiC lost 0.21 mg/cm2 . Just like in previous coatings on a Mo substrate, the MoSi2 layer in the coating converted to Mo5Si3 which was able to form passive SiO2. Analysis of the Mo-Si-B coated SiC interface showed a layer of Mo5Si3C with interspersed SiO2 in place of a T2 layer. This was expected though, as T2 only forms since MoSi2 and MoB are not in equilibrium with Mo. When the Mo substrate is replaced with SiC, there is no driving force to form T2. Post-test cross sectional analysis showed that the Mo5Si3C layer had the formation of CO pores, although these did not hinder the oxidation protection of the coating or create disruptions in the coating. Issues may arise at higher temperatures or longer times, but these initial results show Mo-Si-B coatings are promising candidate for active oxidation protection of SiC.
- 일반주제명
- Engineering
- 일반주제명
- Thermodynamics
- 일반주제명
- Materials science
- 일반주제명
- Inorganic chemistry
- 키워드
- Active oxidation
- 키워드
- Borosilica
- 키워드
- Coating
- 키워드
- Mo-Si-B
- 키워드
- SiC
- 기타저자
- The University of Wisconsin - Madison Materials Science and Engineering
- 기본자료저록
- Dissertations Abstracts International. 87-02B.
- 전자적 위치 및 접속
- 로그인 후 원문을 볼 수 있습니다.
MARC
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■00520260202104830
■006m o d
■007cr#unu||||||||
■020 ▼a9798290917290
■035 ▼a(MiAaPQ)AAI32170489
■040 ▼aMiAaPQ▼cMiAaPQ
■0820 ▼a620
■1001 ▼aBecker, Jeffrey R., Jr.
■24510▼aMo-Si-B Coatings for Protection of SiC-Based Materials in High Temperature Active Oxidation Environments
■260 ▼a[Sl]▼bThe University of Wisconsin - Madison▼c2025
■260 1▼aAnn Arbor▼bProQuest Dissertations & Theses▼c2025
■300 ▼a152 p
■500 ▼aSource: Dissertations Abstracts International, Volume: 87-02, Section: B.
■500 ▼aAdvisor: Perepezko, John H.
■5021 ▼aThesis (Ph.D.)--The University of Wisconsin - Madison, 2025.
■520 ▼aRecent interest in achieving sustained hypersonic flight and re-useable hypersonic vehicles have required testing and development of new leading-edge materials that can be used in more and more extreme environments - such as temperatures over 1800°C with variable oxygen potentials. Current materials for hypersonic applications are either ablative, like carbon fiber blankets, or do not produce stable oxides, such Hf and Zr boride and carbides. In order to survive multiple longterm flights, new materials with stable oxides and low rate constants must be developed. SiC and SiC composites can achieve this by forming a passive SiO2 protective layer but are limited to temperatures below 1600°C or lower due to active oxidation. Active oxidation is a mechanism in which silica forming materials form a volatile oxide, SiO, causing rapid erosion of the substrate material. Most studies on active oxidation focus on SiC and there is limited information on other silica forming materials. Because of this, there is a gap in knowledge on the mechanisms behind active oxidation of other silica forming materials, and they are often overlooked as a class of materials only because this phenomenon is not fully understood. To address this limitation, this thesis investigates the active oxidation behavior of Mo-Si-B coatings, as well as explores the viability of a Mo-Si-B coating on SiC. Initial work showed that Mo-silicides can be used at a higher temperature and lower Po2 than SiC and still form a stable oxide. However, no work was done to fully understand why or how changing the SiO2 composition could affect this. Initially Mo-Si-B coatings were tested directly against SiC in active oxidation conditions (1500°C and Po2=10-4 atm) to better understand the re-passivation mechanism. While active oxidation was observed for the coating, it showed superior performance to the SiC. After 20 hours of exposure, the coating gained 0.6 mg/cm2 , while SiC lost over 67 mg/cm2 . The Mo-Si-B coating underwent active oxidation until enough Si was lost so that Mo5Si3 and Mo3Si formed as the primary phases, and SiO2 became the stable oxide once again. This re-stabilization behavior allows the Mo-silicide coating to have protection from active oxidation at a lower Po2 than SiC. A thermodynamic analysis is presented to explain why the Mo-silicides have a larger range of operation than SiC.The active oxidation behavior of Mo-silicide coatings was analyzed for four compositions: without additives, with Al, with B, and with both Al and B additives in the SiO2 scale. The coatings were tested at 1500°C and Po2=10-4 atm for durations of 2, 4, 6, 8, and 20 hours. After 20 hours, each coating consisted of a thick SiO2 layer, followed by Mo5Si3, and no MoSi2 which was the primary phase before exposure. The temperature and Po2 studied exceeded the passive-to-active transition of MoSi2, but not for Mo5Si3. A thermodynamic analysis was conducted to determine the passive-to-active transition for all MoSi2, Mo5Si3, and Mo3Si. Additionally, modifications were made for additives in SiO2, which explains why little difference was seen in the final microstructure of each coating. The model suggests that a dramatic reduction in SiO2 activity can substantially lower the passive-to-active transition temperature in silica forming materials. In order to determine the feasibility of a Mo-Si-B coating on SiC, a diffusion couple experiment of Mo5SiB2 (T2) and SiC in contact was conducted at 1700°C for 150 hours. The post-anneal bonded interface was examined by high-resolution scanning transmission electron microscopy (STEM). The results show no formation of other compounds between the two phases, to indicate that T2 and SiC are in thermodynamic equilibrium. A CALPHAD model phase diagram of T2 in contact with SiC shows the predicted formation of MoB, Mo2BC, and Mo5Si3C phases that were not seen. The discrepancy between the model prediction and the observed equilibria was due to the T2 phase being treated as a line compound, when it really contains a homogeneity range. When accounting for the T2 compositional variance, the model matched the experimental results. This was further confirmed by melting a Mo-Si-B-C alloy and annealing at 1700℃ for 150 hours, which showed a microstructure of T2, SiC, Mo5Si3C, and MoB phases that matched the predicted phase equilibria in the improved thermodynamic model.Finally, a Mo-Si-B coating was applied to SiC and tested in an active oxidation environment of 1450°C and Po2 = 10-4 atm. The coating process includes: 1) application of a Mo precoat using pressureless sintering, 2) deposition of Si or Si and B by pack cementation, 3) high temperature oxidation in air to form a passive SiO2 layer. After 10 hours of active oxidation exposure, uncoated SiC lost 20.15 mg/cm2 and showed a noticeable reduction in size, while the coated SiC lost 0.21 mg/cm2 . Just like in previous coatings on a Mo substrate, the MoSi2 layer in the coating converted to Mo5Si3 which was able to form passive SiO2. Analysis of the Mo-Si-B coated SiC interface showed a layer of Mo5Si3C with interspersed SiO2 in place of a T2 layer. This was expected though, as T2 only forms since MoSi2 and MoB are not in equilibrium with Mo. When the Mo substrate is replaced with SiC, there is no driving force to form T2. Post-test cross sectional analysis showed that the Mo5Si3C layer had the formation of CO pores, although these did not hinder the oxidation protection of the coating or create disruptions in the coating. Issues may arise at higher temperatures or longer times, but these initial results show Mo-Si-B coatings are promising candidate for active oxidation protection of SiC.
■590 ▼aSchool code: 0262.
■650 4▼aEngineering
■650 4▼aThermodynamics
■650 4▼aMaterials science
■650 4▼aInorganic chemistry
■653 ▼aActive oxidation
■653 ▼aBorosilica
■653 ▼aCoating
■653 ▼aMo-Si-B
■653 ▼aPassive-to-active transition
■653 ▼aSiC
■690 ▼a0794
■690 ▼a0537
■690 ▼a0348
■690 ▼a0488
■71020▼aThe University of Wisconsin - Madison▼bMaterials Science and Engineering.
■7730 ▼tDissertations Abstracts International▼g87-02B.
■790 ▼a0262
■791 ▼aPh.D.
■792 ▼a2025
■793 ▼aEnglish
■85640▼uhttp://www.riss.kr/pdu/ddodLink.do?id=T17359072▼nKERIS▼z이 자료의 원문은 한국교육학술정보원에서 제공합니다.
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