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Correlated Interlayer Excitons in Van der Waals Semiconductor Heterostructures
Correlated Interlayer Excitons in Van der Waals Semiconductor Heterostructures
상세정보
- 자료유형
- 학위논문 서양
- 최종처리일시
- 20260311091539.5
- ISBN
- 9798280720152
- DDC
- 546
- 서명/저자
- Correlated Interlayer Excitons in Van der Waals Semiconductor Heterostructures / Andrés Mariano Mier Valdivia
- 발행사항
- [Sl] : Harvard University, 2025
- 형태사항
- 1 electronic resource (256 pages)
- 주기사항
- Source: Dissertations Abstracts International, Volume: 86-12, Section: B.
- 주기사항
- Advisors: Kim, Philip Committee members: Lukin, Mikhail; Semeghini, Giulia; Ha, Taekjip.
- 학위논문주기
- - Ph.D. : Harvard University, 2025.
- 초록/해제
- 요약Interlayer excitons (IXs) are bound pairs of spatially-separated electrons and holes that occur in in type-II van der Waals heterostructures. They exhibit long lifetimes and mutual dipolar repulsion, in addition to strong interactions with unpaired electrons and holes that lead to the formation of charged IXs. To study the effect of correlations and manipulate the IXs, we design highly tunable nanodevices based on atomically thin semiconductors. Our efforts enable the study of a wealth of correlated excitonic states. In two-dimensional light-emitting diodes, we reveal the effects of defect-mediated electron localization on IXs and diode operation. We unveil the novel phenomenon of steady state cooperative electroluminescence from incoherently injected, electrically generated IXs. Lastly, we employ gate-mediated electrostatic confinement to controllably trap IXs and study their behavior at high densities, discovering novel features about the IX ionization phase diagram. These results expand our understanding of nonequilibrium phases of matter, and hold promise for creating optoelectronic devices for both future classical and quantum technologies.
- 언어주기
- English
- 일반주제명
- Condensed matter physics
- 일반주제명
- Nanoscience
- 일반주제명
- Nanotechnology
- 일반주제명
- Physical chemistry
- 키워드
- 2D material
- 키워드
- Exciton
- 키워드
- Optoelectronics
- 기타저자
- Harvard University Engineering and Applied Sciences - Applied Physics
- 기본자료저록
- Dissertations Abstracts International. 86-12B.
- 전자적 위치 및 접속
- 로그인 후 원문을 볼 수 있습니다.
MARC
008260311s2025 us eng d■001000017357761
■00520260311091539.5
■006m o d
■007cr|nu||||||||
■020 ▼a9798280720152
■040 ▼aMiAaPQD▼beng▼cMiAaPQD▼erda
■082 ▼a546
■1001 ▼aMier Valdivia, Andrés Mariano▼eauthor.▼0(orcid)0000-0003-1656-9501
■24510▼aCorrelated Interlayer Excitons in Van der Waals Semiconductor Heterostructures ▼cAndrés Mariano Mier Valdivia
■260 ▼a[Sl]▼bHarvard University▼c2025
■264 1▼aAnn Arbor▼bProQuest Dissertations & Theses▼c2025
■300 ▼a1 electronic resource (256 pages)
■336 ▼atext▼btxt▼2rdacontent
■337 ▼acomputer▼bc▼2rdamedia
■338 ▼aonline resource▼bcr▼2rdacarrier
■500 ▼aSource: Dissertations Abstracts International, Volume: 86-12, Section: B.
■500 ▼aAdvisors: Kim, Philip Committee members: Lukin, Mikhail; Semeghini, Giulia; Ha, Taekjip.
■5021 ▼bPh.D.▼cHarvard University▼d2025.
■520 ▼aInterlayer excitons (IXs) are bound pairs of spatially-separated electrons and holes that occur in in type-II van der Waals heterostructures. They exhibit long lifetimes and mutual dipolar repulsion, in addition to strong interactions with unpaired electrons and holes that lead to the formation of charged IXs. To study the effect of correlations and manipulate the IXs, we design highly tunable nanodevices based on atomically thin semiconductors. Our efforts enable the study of a wealth of correlated excitonic states. In two-dimensional light-emitting diodes, we reveal the effects of defect-mediated electron localization on IXs and diode operation. We unveil the novel phenomenon of steady state cooperative electroluminescence from incoherently injected, electrically generated IXs. Lastly, we employ gate-mediated electrostatic confinement to controllably trap IXs and study their behavior at high densities, discovering novel features about the IX ionization phase diagram. These results expand our understanding of nonequilibrium phases of matter, and hold promise for creating optoelectronic devices for both future classical and quantum technologies.
■546 ▼aEnglish
■590 ▼aSchool code: 0084
■650 4▼aCondensed matter physics
■650 4▼aNanoscience
■650 4▼aNanotechnology
■650 4▼aPhysical chemistry
■653 ▼a2D material
■653 ▼aElectroluminescence
■653 ▼aExciton
■653 ▼aOptoelectronics
■653 ▼aPhotoluminescence
■653 ▼aTransition metal dichalcogenide
■7102 ▼aHarvard University▼bEngineering and Applied Sciences - Applied Physics.▼edegree granting institution.
■7201 ▼aKim, Philip▼edegree supervisor.
■7730 ▼tDissertations Abstracts International▼g86-12B.
■85640▼uhttp://www.riss.kr/pdu/ddodLink.do?id=T17357761▼nKERIS▼z이 자료의 원문은 한국교육학술정보원에서 제공합니다.
