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Etching for Quantum-Ready Surfaces
Etching for Quantum-Ready Surfaces
상세정보
- 자료유형
- 학위논문 서양
- 최종처리일시
- 20260202105249
- ISBN
- 9798291578070
- DDC
- 620.11
- 서명/저자
- Etching for Quantum-Ready Surfaces
- 발행사항
- [Sl] : University of Illinois at Urbana-Champaign, 2023
- 발행사항
- Ann Arbor : ProQuest Dissertations & Theses, 2023
- 형태사항
- 122 p
- 주기사항
- Source: Dissertations Abstracts International, Volume: 87-03, Section: B.
- 주기사항
- Advisor: Eden, J. Gary;Li, Xiuling.
- 학위논문주기
- Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2023.
- 초록/해제
- 요약The burgeoning field of quantum mechanical devices is impeded by the lossy nature of its underlying physical systems. Such devices are pristine in conception but not in physical realization. Unlike classical devices, quantum devices that rely on individual particles cannot tolerate loss. Fabrication techniques are imperfect in this regard and are a major barrier to quantum supremacy.This thesis seeks to improve the fabrication methodology for etching a few pertinent quantum materials: 4H-SiC, diamond, and CeO2. The former sees development in metal-assisted chemical etching (MacEtch) and all three gain plasma-based anisotropic atomic layer etching (ALE) recipes. Moreover, the field of ALE is expanded with a novel approach to ALE, called bias-pulsed atomic layer etching (BP-ALE) that vastly speeds the etch rate while maintaining the inimitable precision of ALE. Subangstrom RMS surface roughness was observed in both 4H-SiC and diamond confirmed with several atomic force microscopy (AFM) scans.
- 일반주제명
- Materials science
- 일반주제명
- Plasma physics
- 일반주제명
- Electrical engineering
- 일반주제명
- Quantum physics
- 키워드
- Nanotechnology
- 키워드
- Plasma etching
- 키워드
- Wet etching
- 키워드
- Quantum devices
- 기타저자
- University of Illinois at Urbana-Champaign Electrical & Computer Eng
- 기본자료저록
- Dissertations Abstracts International. 87-03B.
- 전자적 위치 및 접속
- 로그인 후 원문을 볼 수 있습니다.
MARC
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■040 ▼aMiAaPQ▼cMiAaPQ
■0820 ▼a620.11
■1001 ▼aMichaels, Julian Arthur.
■24510▼aEtching for Quantum-Ready Surfaces
■260 ▼a[Sl]▼bUniversity of Illinois at Urbana-Champaign▼c2023
■260 1▼aAnn Arbor▼bProQuest Dissertations & Theses▼c2023
■300 ▼a122 p
■500 ▼aSource: Dissertations Abstracts International, Volume: 87-03, Section: B.
■500 ▼aAdvisor: Eden, J. Gary;Li, Xiuling.
■5021 ▼aThesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2023.
■520 ▼aThe burgeoning field of quantum mechanical devices is impeded by the lossy nature of its underlying physical systems. Such devices are pristine in conception but not in physical realization. Unlike classical devices, quantum devices that rely on individual particles cannot tolerate loss. Fabrication techniques are imperfect in this regard and are a major barrier to quantum supremacy.This thesis seeks to improve the fabrication methodology for etching a few pertinent quantum materials: 4H-SiC, diamond, and CeO2. The former sees development in metal-assisted chemical etching (MacEtch) and all three gain plasma-based anisotropic atomic layer etching (ALE) recipes. Moreover, the field of ALE is expanded with a novel approach to ALE, called bias-pulsed atomic layer etching (BP-ALE) that vastly speeds the etch rate while maintaining the inimitable precision of ALE. Subangstrom RMS surface roughness was observed in both 4H-SiC and diamond confirmed with several atomic force microscopy (AFM) scans.
■590 ▼aSchool code: 0090.
■650 4▼aMaterials science
■650 4▼aPlasma physics
■650 4▼aElectrical engineering
■650 4▼aQuantum physics
■653 ▼aQuantum mechanical devices
■653 ▼aAtomic layer etching
■653 ▼aNanotechnology
■653 ▼aPlasma etching
■653 ▼aAtomic force microscopy
■653 ▼aWet etching
■653 ▼aQuantum devices
■690 ▼a0544
■690 ▼a0794
■690 ▼a0759
■690 ▼a0599
■71020▼aUniversity of Illinois at Urbana-Champaign▼bElectrical & Computer Eng.
■7730 ▼tDissertations Abstracts International▼g87-03B.
■790 ▼a0090
■791 ▼aPh.D.
■792 ▼a2023
■793 ▼aEnglish
■85640▼uhttp://www.riss.kr/pdu/ddodLink.do?id=T17360000▼nKERIS▼z이 자료의 원문은 한국교육학술정보원에서 제공합니다.
