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Cryogenic CMOS Circuits for High Performance Digital Systems
Cryogenic CMOS Circuits for High Performance Digital Systems
Cryogenic CMOS Circuits for High Performance Digital Systems

상세정보

자료유형  
 학위논문 서양
최종처리일시  
20260202105505
ISBN  
9798263326319
DDC  
620
저자명  
Saligram, Rakshith.
서명/저자  
Cryogenic CMOS Circuits for High Performance Digital Systems
발행사항  
[Sl] : Georgia Institute of Technology, 2024
발행사항  
Ann Arbor : ProQuest Dissertations & Theses, 2024
형태사항  
169 p
주기사항  
Source: Dissertations Abstracts International, Volume: 87-05, Section: B.
주기사항  
Advisor: Raychowdhury, Arijit.
학위논문주기  
Thesis (Ph.D.)--Georgia Institute of Technology, 2024.
초록/해제  
요약There has been an ever increasing demand for energy efficient processors, more recently so with the emergence of Artificial Intelligence, Machine Learning and Large Language Models. Cryogenic computing is a transformative technology that uses ultra low temperatures (-196◦C / 77K) to achieve higher performance and/or better energy efficiency. The superior device characteristics like higher device drive current, lower subthreshold slope, ultra low subthreshold leakage, lower interconnect resistance etc., opens multitude of design opportunities both at circuits and system level. It also enables memory technologies which are otherwise lost due to technological evolution. In this work, we show how the better device and interconnect properties translate to faster, smaller and lower power systems.To do so, we build in-house cryogenic device models well calibrated to experimentally measured data for both transistors (chapter 3) and wires (chapter 4). We use circuit concepts to intricately measure and calibrate the interconnect resistance based on a standard foundry process chip tapeout in 22nm FDSOI. The models are robust, scalable, based on industry standard platforms and aid in cryogenic circuit simulation to design higher order systems. We characterize a matrix multiplication accelerator test chip (chapter 5) across temperature built in 40nm CMOS process and demonstrate an energy efficiency improvement of up to 26%. We propose new biasing techniques for dynamic logic circuits which when benchmarked on a 64-bit domino logic adder proves to consume 41% lesser energy than the room temperature counterpart. We also co-optimize the design of 6T SRAM with technology to allow for supply voltage scaling in the presence of variation while providing 5.4x lower energy and 1.2x lower delay. We further demonstrate a 28nm hybrid 2T gain cell embedded DRAM test chip capable of operating from 4K to 300K. The memory macro shows 1.7x energy higher energy efficiency, more than 106x higher retention time and lower refresh rate at low temperature (chapter 6). Finally, we present a design technology co-optimized benchmarking of a 64-bit Arm processor. More than 12 different standard cell libraries are recharacterized at multiple temperatures and supply voltages to execute full fledged auto-place and route runs. The designs are then analyzed for power, performance and area, results of which show more than 4x improvement in energy efficiency at low temperature. We also benchmark the thermal behavior of the system and show that cryogenic computing can theoretically allow higher number of chips to be packaged together at a given thermal design power limit. Lastly, the cooling cost is analyzed and key roadblocks are identified with possible future works.
일반주제명  
Circuits
일반주제명  
High performance systems
일반주제명  
Energy consumption
일반주제명  
High performance computing
일반주제명  
Computer science
일반주제명  
Electrical engineering
기타저자  
Georgia Institute of Technology.
기본자료저록  
Dissertations Abstracts International. 87-05B.
전자적 위치 및 접속  
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MARC

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■1001  ▼aSaligram,  Rakshith.
■24510▼aCryogenic  CMOS  Circuits  for  High  Performance  Digital  Systems
■260    ▼a[Sl]▼bGeorgia  Institute  of  Technology▼c2024
■260  1▼aAnn  Arbor▼bProQuest  Dissertations  &  Theses▼c2024
■300    ▼a169  p
■500    ▼aSource:  Dissertations  Abstracts  International,  Volume:  87-05,  Section:  B.
■500    ▼aAdvisor:  Raychowdhury,  Arijit.
■5021  ▼aThesis  (Ph.D.)--Georgia  Institute  of  Technology,  2024.
■520    ▼aThere  has  been  an  ever  increasing  demand  for  energy  efficient  processors,  more  recently  so  with  the  emergence  of  Artificial  Intelligence,  Machine  Learning  and  Large  Language  Models.  Cryogenic  computing  is  a  transformative  technology  that  uses  ultra  low  temperatures  (-196◦C  /  77K)  to  achieve  higher  performance  and/or  better  energy  efficiency.  The  superior  device  characteristics  like  higher  device  drive  current,  lower  subthreshold  slope,  ultra  low  subthreshold  leakage,  lower  interconnect  resistance  etc.,  opens  multitude  of  design  opportunities  both  at  circuits  and  system  level.  It  also  enables  memory  technologies  which  are  otherwise  lost  due  to  technological  evolution.  In  this  work,  we  show  how  the  better  device  and  interconnect  properties  translate  to  faster,  smaller  and  lower  power  systems.To  do  so,  we  build  in-house  cryogenic  device  models  well  calibrated  to  experimentally  measured  data  for  both  transistors  (chapter  3)  and  wires  (chapter  4).  We  use  circuit  concepts  to  intricately  measure  and  calibrate  the  interconnect  resistance  based  on  a  standard  foundry  process  chip  tapeout  in  22nm  FDSOI.  The  models  are  robust,  scalable,  based  on  industry  standard  platforms  and  aid  in  cryogenic  circuit  simulation  to  design  higher  order  systems.  We  characterize  a  matrix  multiplication  accelerator  test  chip  (chapter  5)  across  temperature  built  in  40nm  CMOS  process  and  demonstrate  an  energy  efficiency  improvement  of  up  to  26%.  We  propose  new  biasing  techniques  for  dynamic  logic  circuits  which  when  benchmarked  on  a  64-bit  domino  logic  adder  proves  to  consume  41%  lesser  energy  than  the  room  temperature  counterpart.  We  also  co-optimize  the  design  of  6T  SRAM  with  technology  to  allow  for  supply  voltage  scaling  in  the  presence  of  variation  while  providing  5.4x  lower  energy  and  1.2x  lower  delay.  We  further  demonstrate  a  28nm  hybrid  2T  gain  cell  embedded  DRAM  test  chip  capable  of  operating  from  4K  to  300K.  The  memory  macro  shows  1.7x  energy  higher  energy  efficiency,  more  than  106x  higher  retention  time  and  lower  refresh  rate  at  low  temperature  (chapter  6).  Finally,  we  present  a  design  technology  co-optimized  benchmarking  of  a  64-bit  Arm  processor.  More  than  12  different  standard  cell  libraries  are  recharacterized  at  multiple  temperatures  and  supply  voltages  to  execute  full  fledged  auto-place  and  route  runs.  The  designs  are  then  analyzed  for  power,  performance  and  area,  results  of  which  show  more  than  4x  improvement  in  energy  efficiency  at  low  temperature.  We  also  benchmark  the  thermal  behavior  of  the  system  and  show  that  cryogenic  computing  can  theoretically  allow  higher  number  of  chips  to  be  packaged  together  at  a  given  thermal  design  power  limit.  Lastly,  the  cooling  cost  is  analyzed  and  key  roadblocks  are  identified  with  possible  future  works.
■590    ▼aSchool  code:  0078.
■650  4▼aCircuits
■650  4▼aHigh  performance  systems
■650  4▼aEnergy  consumption
■650  4▼aHigh  performance  computing
■650  4▼aComputer  science
■650  4▼aElectrical  engineering
■690    ▼a0984
■690    ▼a0544
■71020▼aGeorgia  Institute  of  Technology.
■7730  ▼tDissertations  Abstracts  International▼g87-05B.
■790    ▼a0078
■791    ▼aPh.D.
■792    ▼a2024
■793    ▼aEnglish
■85640▼uhttp://www.riss.kr/pdu/ddodLink.do?id=T17360311▼nKERIS▼z이  자료의  원문은  한국교육학술정보원에서  제공합니다.

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