서브메뉴
검색
Interferometry of Integer and Fractional Quantum Hall Edge States in Graphene
Interferometry of Integer and Fractional Quantum Hall Edge States in Graphene
상세정보
- 자료유형
- 학위논문 서양
- 최종처리일시
- 20260202103553
- ISBN
- 9798280713758
- DDC
- 530
- 서명/저자
- Interferometry of Integer and Fractional Quantum Hall Edge States in Graphene
- 발행사항
- [Sl] : Harvard University, 2025
- 발행사항
- Ann Arbor : ProQuest Dissertations & Theses, 2025
- 형태사항
- 190 p
- 주기사항
- Source: Dissertations Abstracts International, Volume: 86-12, Section: B.
- 주기사항
- Advisor: Kim, Philip.
- 학위논문주기
- Thesis (Ph.D.)--Harvard University, 2025.
- 초록/해제
- 요약In this thesis, we develop Fabry-Perot quantum Hall interferometers in graphene and measure anyon braiding in the fractional quantum Hall effect. Our results demonstrate the potential of van der Waals materials for constructing quantum coherent electronic devices with advanced functionalities in order to unveil a wealth of physics that is otherwise inaccessible via transport measurements. We begin by first demonstrating clear Aharonov-Bohm resistance oscillations in integer quantum Hall states, overcoming a major technical challenge of "Coulomb dominated" oscillations, which plagued decades of experiments in traditional semiconductor-based platforms. Next, we develop an improved, density-tunable interferometer and measure tunable Coulomb coupling between copropagating integer edge states, revealing the physics behind anomalous interference phase jumps andAharonov-Bohm oscillation frequency doubling in the integer quantum Hall effect. Similar observations in other semiconductor platforms had been unexplained for a decade. The combined theoretical developments and precise tuning knobs added by our work enable further experiments probing correlations in strongly coupled one-dimensional chiral edge channels. Finally, we observe robust Aharonov-Bohm oscillations in two distinct fractional quantum Hall states, filling fractions ν = 1/3 and ν = 4/3, and discover 3-state telegraph noise consistent with localized anyon number fluctuations, which we put to use to directly measure the 2π/3 abelian anyon braiding phase in both states. This final work enables further experiments to demonstrate control of the localized anyon number and eventually measure the braiding properties of non-abelian anyons in even-denominator fractional quantum Hall states. Many open questions, such as whether non-abelian order describes these states, how robust topological order really is, which excitations belong to which fractional states in real devices, and whether we can build a technology leveraging the exotic physics of the fractional quantum Hall effect will soon be directly addressable.
- 일반주제명
- Condensed matter physics
- 일반주제명
- Low temperature physics
- 일반주제명
- Quantum physics
- 키워드
- Anyons
- 키워드
- Edge states
- 키워드
- Graphene
- 키워드
- Quantum hall
- 기타저자
- Harvard University Engineering and Applied Sciences - Applied Physics
- 기본자료저록
- Dissertations Abstracts International. 86-12B.
- 전자적 위치 및 접속
- 로그인 후 원문을 볼 수 있습니다.
MARC
008260126s2025 us c eng d■001000017357734
■00520260202103553
■006m o d
■007cr#unu||||||||
■020 ▼a9798280713758
■035 ▼a(MiAaPQ)AAI32041931
■040 ▼aMiAaPQ▼cMiAaPQ
■0820 ▼a530
■1001 ▼aWerkmeister, Thomas.▼0(orcid)0009-0009-1017-1181
■24510▼aInterferometry of Integer and Fractional Quantum Hall Edge States in Graphene
■260 ▼a[Sl]▼bHarvard University▼c2025
■260 1▼aAnn Arbor▼bProQuest Dissertations & Theses▼c2025
■300 ▼a190 p
■500 ▼aSource: Dissertations Abstracts International, Volume: 86-12, Section: B.
■500 ▼aAdvisor: Kim, Philip.
■5021 ▼aThesis (Ph.D.)--Harvard University, 2025.
■520 ▼aIn this thesis, we develop Fabry-Perot quantum Hall interferometers in graphene and measure anyon braiding in the fractional quantum Hall effect. Our results demonstrate the potential of van der Waals materials for constructing quantum coherent electronic devices with advanced functionalities in order to unveil a wealth of physics that is otherwise inaccessible via transport measurements. We begin by first demonstrating clear Aharonov-Bohm resistance oscillations in integer quantum Hall states, overcoming a major technical challenge of "Coulomb dominated" oscillations, which plagued decades of experiments in traditional semiconductor-based platforms. Next, we develop an improved, density-tunable interferometer and measure tunable Coulomb coupling between copropagating integer edge states, revealing the physics behind anomalous interference phase jumps andAharonov-Bohm oscillation frequency doubling in the integer quantum Hall effect. Similar observations in other semiconductor platforms had been unexplained for a decade. The combined theoretical developments and precise tuning knobs added by our work enable further experiments probing correlations in strongly coupled one-dimensional chiral edge channels. Finally, we observe robust Aharonov-Bohm oscillations in two distinct fractional quantum Hall states, filling fractions ν = 1/3 and ν = 4/3, and discover 3-state telegraph noise consistent with localized anyon number fluctuations, which we put to use to directly measure the 2π/3 abelian anyon braiding phase in both states. This final work enables further experiments to demonstrate control of the localized anyon number and eventually measure the braiding properties of non-abelian anyons in even-denominator fractional quantum Hall states. Many open questions, such as whether non-abelian order describes these states, how robust topological order really is, which excitations belong to which fractional states in real devices, and whether we can build a technology leveraging the exotic physics of the fractional quantum Hall effect will soon be directly addressable.
■590 ▼aSchool code: 0084.
■650 4▼aCondensed matter physics
■650 4▼aLow temperature physics
■650 4▼aQuantum physics
■653 ▼aAnyons
■653 ▼aEdge states
■653 ▼aFractional charge
■653 ▼aFractional statistics
■653 ▼aGraphene
■653 ▼aQuantum hall
■690 ▼a0611
■690 ▼a0598
■690 ▼a0599
■71020▼aHarvard University▼bEngineering and Applied Sciences - Applied Physics.
■7730 ▼tDissertations Abstracts International▼g86-12B.
■790 ▼a0084
■791 ▼aPh.D.
■792 ▼a2025
■793 ▼aEnglish
■85640▼uhttp://www.riss.kr/pdu/ddodLink.do?id=T17357734▼nKERIS▼z이 자료의 원문은 한국교육학술정보원에서 제공합니다.


