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국가과학기술정보센터(ScienceON) 특허검색
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1 메탈할라이드램프 / 원철희
본 발명은 메탈 할라이드를 금속 혹은 금속 할로겐 화합물의 형태로서 석영으로 된 방전관내에 봉입하여 만드는 방전등으로서,주발광 파장이 자외선 대역인 광화학용 자외선 메탈 할라이드 램프에 관한 것이다.종래의 수은-갈륨 램프에서는 흑화 현상이 빨리 나타나거나 사용 수 백시간만에 아크 트위스트 현상이 발생하며,수은-주석 램프에서는 광화학 반응에 적당한 400NM 부근의 파장이 부족하여 광화학 반응용으로 사용하는데 문제점이 많이 대두되고 있다.본 발명의 광화학 반응용 자외선 메탈 할라이드 램프는 양쪽에 각 1개씩의 전극을 구비한 석영제 발광관 내부에 일정량의 수은 방전용 불활성 가스,할로겐 금속 혹은 순수 금속을 넣어서 만들어진다. 할로겐 금속 혹은 방사 금속으로 갈륨을 5.6*10-8 G원자/CC-2.7*10-5 G원자/CC와 란타늄 6.2*10-7 G원자/CC-3.8*10-4 G원자/CC를 봉입한다. 본 발명의 메탈 할라이드 램프는 갈륨과 란타늄을 정량 봉입함으로써 광화학 반응에 적당한 280-450NM사이의 스펙트럼이 방사되며,고압 수은 자외선 램프에 비해 3배이상의 효율과 2배이상의 수명을 얻으며,갈륨-수은,주석-수은 램프의 아크 트위스트 및 플럭튜에션 현상을 완전히 해결한다.
2 Air bag / Asahi Kasei Kogyo Kabushiki Kaisha (Osaka JPX 03)
An airbag (1) constituted by using a laminated cloth comprising a woven fabric (2a) of synthetic fiber multifilaments, a film (3) of a polyolefin group resin laminated on a side of the woven fabric (2a) and a nonwoven fabric (4) laminated on the film (3). The laminated cloth has a weight per unit area of 280 g/m2 or less and an air permeability of 2 cc/cm2 or less. The air bag having the constitution in accordance with the present invention has synthetically superior characteristics as an air bag for a driver s seat, a passenger s seat, or others, in a vehicle.
3 VINYLPYRIDINE RESIN FOR CATALYST SUPPORTS, PRODUCTION METHOD THEREFOR, AND CATALYST FOR METHANOL CARBONYLATION REACTION / CHIYODA CORPORATION
A vinylpyridine resin for a catalyst support; a method for producing thereof; and a catalyst for carbonylation of methanol are disclosed. The vinylpyridine resin has: content of nitrogen derived from a pyridine group of 3.00% by mass or more and 8.00% by mass or less; degree of crosslinking of 35% by mole or more and 70% by mole or less; molar ratio C/N of carbon atoms to nitrogen atoms of 12.00 or more and 36.00 or less; total pore volume of 0.20 cc/g or more and 0.45 cc/g or less; specific surface area of 70.0 m2/g or more and 280 m2/g or less; average pore diameter of 5.0 nm or more and 25.0 nm or less; and proportion of a volume of pores having a pore diameter of 10 nm or more to a volume of the whole pores of 4.0% or more and 90.0% or less.
4 Vinylpyridine resin for catalyst supports, production method therefor, and catalyst for methanol carbonylation reaction / CHIYODA CORPORATION
A vinylpyridine resin for a catalyst support; a method for producing thereof; and a catalyst for carbonylation of methanol are disclosed. The vinylpyridine resin has: content of nitrogen derived from a pyridine group of 3.00% by mass or more and 8.00% by mass or less; degree of crosslinking of 35% by mole or more and 70% by mole or less; molar ratio C/N of carbon atoms to nitrogen atoms of 12.00 or more and 36.00 or less; total pore volume of 0.20 cc/g or more and 0.45 cc/g or less; specific surface area of 70.0 m2/g or more and 280 m2/g or less; average pore diameter of 5.0 nm or more and 25.0 nm or less; and proportion of a volume of pores having a pore diameter of 10 nm or more to a volume of the whole pores of 4.0% or more and 90.0% or less.
5 MATERIAL OF MASK FOR METHANE/HYDROGEN PLASMA ETCHING / NEC CORP
(PURPOSE) To realize a high etching resistance by a method wherein an insulating film made of material having silicon, aluminum and nitrogen as component elements is formed. (CONSTITUTION) An Si0.5 Al0.5 NX film is formed on an InP substrate by a parallel flat plate type 13.56MHz plasma deposition apparatus. SiH4 , TMA ((CH3 )6 Al2 ) and NH3 are employed as raw gases and N2 is employed as an atmospheric gas. Gas flow rates are 10cc/min. for SiH4 , 2 cc/min. for TMA, 100cc/min. for NH3 and 200cc/min. for N2 . The Si0.5 Al0.5 NX film having a thickness of 80nm is deposited with a film deposition temperature of 280°C, a radio frequency power density of 0.05w/cm3 and a pressure of 100 Pa. Then the film is patterned by photolithography to form a striped pattern composed of the repetition of the Si0.5 Al0.5 NX remaining part having a width of 40μm and the Si0.5 Al0.5 NX removed part having a width of 5μm.
6 AIR BAG / Asahi Kasei Kogyo Kabushiki Kaisha
An air bag (1) composed of, at least one part, a laminated fabric comprising a fabric (2a) woven of synthetic multifilament yarns, olefinic resin film (3) laminated on one side of said fabric (2a), and non-woven fabric (4) overlaid on said resin film (3). Said laminated fabric weights 280 g/m2 or under and has air permeability of 2 cc/cm2/min or under. An air bag of the structure of this invention exhibits excellent functions generally applicable to not only the driver's seat but also assistant-driver's seat and other purposes in vehicles.
7 AIR BAG / KIMOTO, Katsuyoshi
An air bag (1) composed of, at least one part, a laminated fabric comprising a fabric (2a) woven of synthetic multifilament yarns, olefinic resin film (3) laminated on one side of said fabric (2a), and non-woven fabric (4) overlaid on said resin film (3). Said laminated fabric weights 280 g/m2 or under and has air permeability of 2 cc/cm2/min or under. An air bag of the structure of this invention exhibits excellent functions generally applicable to not only the driver's seat but also assistant-driver's seat and other purposes in vehicles.
8 LAMINATED CLOTH FILM / ASAHI CHEM IND CO LTD
(PURPOSE) To prevent human bodies from being hurt at inflation by closely integrating a resin pellicle with woven and nonwoven fabric surfaces and through the melting of polyolefine resin, and thereby forming the pellicle at an air permeability of 2cc/cm2 /min or less. (CONSTITUTION) A laminated cloth film 1 of 280g/m2 in weight per unit is made of woven fabric 2, resin pellicle 3 and nonwoven fabric 4. The woven fabric 2 uses high strength synthetic fiber multi-filaments such as polyamid multi- filaments or polyester multi-filaments. The pellicle 3 is made of polyolefine resin pellicle laminated on one side of the fabric 2. The nonwoven fabric 4 is formed of polyamid fibers, polyester fibers or regenerated cellulose fibers laminated on the other side of the pellicles 3. The pellicle 3 is closely integrated with the surfaces of the woven fabric 2 and nonwoven fabric 4 by melting polyolefine resin and formed so as to give the cloth film 1 an air permeability of 2cc/cm2 /min or less. This prevents human bodies from being hurt at the time when the unwoven fabric 4 inflates on its surface.
9 METHOD FOR REMOVING ARSENIC IN COPPER ELECTROLYTIC SOLUTION / NIPPON MINING &amp METALS CO LTD
PROBLEM TO BE SOLVED: To significantly lessen the amount of a liquid for washing by brining a copper electrolytic solution containing copper and arsenic into contact with a chelating resin for adsorbing arsenic, discharging the resultant liquid after the adsorption out of the chelating resin for adsorbing arsenic, eluting the chelating resin by an acidic solution without washing the resin, and washing the eluted liquid in the initial period of the elution. SOLUTION: In the case 1,000 cc of a copper electrolytic solution containing components in concentrations and amounts shown (1) is treated for adsorption by a chelating resin, 920 cc of a liquid after adsorption containing components in concentrations and amounts shown (2) and arsenic in 2g is absorbed. When the resultant resin is washed with water as the resin is in that situation, arsenic is eluted and therefore, washing with water is not carried out and elution is immediately carried out (3) with 200 cc of an eluting solution containing 30 g/L of free sulfuric acid. The eluting solution is a circulating liquid. As a result of the elution, a later liquid of eluted solution containing components in concentrations and amounts shown (4) is obtained as same as an initial liquid shown (5). The total amount of these liquids is 280 cc (arsenic amount = 2g) and the amount of the liquid used for treating the same amount of arsenic by a conventional method is 400 cc and consequently, the amount of the liquid used for treatment is lessened by 30%.
10 GROWTH METHOD OF THIN FILM / NTT&gt
(PURPOSE) To realize the lowering of the temperature of a CVD (chemical vapor growth) reaction and the reduction of gas pressure, and to grow a thin film, which is hardly damaged, by starting the growth of the film at a temperature and pressure where the thermal decomposition reaction of a raw material gas is generated, lowering the temperature and pressure and continuing the growth of the film at lower temperature and pressure. (CONSTITUTION) No deposition is generated in a region of the flow rate of 40cc/min or more of oxygen under the conditions of silane (SiH4 ) of 10cc/min, the total 320cc/min of the flow rate of oxygen (O2 ) and nitrogen (N2 ), total pressure of 400Pa and a substrate temperature of 90°, but the deposition of a film is generated in a region, in which the film is not deposited normally, when the temperature is lowered to 90° after growth is started at 200°C. No deposition is generated under the conditions of SiH4 of 20cc/min, O2 and N2 of 280cc/min, a substrate temperature of 200°C and total pressure of 200Pa, but deposition can be started through treatment for one min at 300Pa. when the film is deposited for ten min at 200Pa after deposition is started, deposition continues. Accordingly, the temperature of a thin film growth LSI process is lowered and power consumption thereof is reduced under the conditions of a low temperature and low gas pressure where no growth is generated in conventional thermal CVD, and the film, which is hardly damaged, can be shaped because the film is irradiated with charged particles and ultraviolet rays completely.

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