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더보기| No | 제목 / 내용 |
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| 1 |
합금의 제조방법 / 윤규호 본 발명은 순금을 신주와 혼합하여 18금의 합금을 제조하는 방법에 관한 것이다.1. 질산 27㎏ 1말에 황동신주 5㎏를 4시간 동안 함침한 후에2. 변형된 황동신주 용액침전물을 100℃이상 3시간 끓여 고화분말을 제조 한다음,3. 상기에서 고화분말 1㎏, 인산 300cc, 개미산 100cc 및 돼지기름 10g 혼합하여 분말을 제조한다.4. 상기에서 제조된 고화분말 제품에 인산 150cc, 돼지기름 50g, 된장 50g 및 곰팡이 물 150cc를 재혼합하여 분말화 한다.5. 상기에서 분말화한 것을 1개월(떡찌듯이)숙성시킨다음, 곰팡이 물 50%, 된장 25% 및 돼지기름 25%을 재혼합하여 1시간 간격으로 촉촉하게 유입시켜 분말화 시킨다.7. 상기에서 제조된 분말화 제품을 숙성제품 1㎏, 인산 300cc, 개미산 100cc 및 돼지기름100g 재혼합하여 분말화 한다.8. 상기에서 분말화된 제품에 인산 150cc, 돼지기름 50g, 된장 50g 및 곰팡이 물 150cc를 재혼합 시킨다.9. (떡찌듯이)10일간 숙성한다. 곰팡이 물 50%, 된장 25% 및 돼지기름 25% 혼합하여 1시간 간격으로 촉촉하게 뿌려준다. 70℃유지하여 재 분말화 시킨다.10. 상기 9번 고화분말 제품 85%, 돼지기름 5%, 된장 3% 및 붕사 7%를 혼합하여 온도 60℃유지, 5분동안 용해시킨후 분말화 시킨다.11. 고화분말 상기 10번 제품을 500℃ - 700℃이상으로 유지 1시간 용해하여 연성금속을 제조한다.12. 상기 11번 연성금속을 12시간 인산에 담가둔다. 이물질이 제거되고 금속이 유연해진다. 13. 24K 금 3.75g 및 연성금속 37.5g(금1돈 + 연성금속 10돈)을 400℃이상 유지 합금용해 39g의 1차 합금을 제조한다.(9%금 제조)14. 상기 12번으로 1차 합금을 사방 1㎝씩 절단하여 5.57g씩 7등분(1/7)구분한다.15. 24k금 (10돈) 37.5g + 유연해진 1차합금 5.57g + 붕사 5g 합류하여 400℃이상으로 30분 용해한다.16. 용해를 중단하지 말고 계속 3시간 50분간 30분 간격으로 1차 합금을 5.57g씩을 유입 용해하여 2차 합금을 제조한다.17. 합계 24k금 41.25g 및 연성금속 10돈 37.5g 계 21돈 78.75g을 3시간 30분 용해한다. 이어서 700℃유지 20분간 연장 용해하여 18금을 제조함을 특징으로 하는 합금의 제조방법. |
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LIQUID FUEL CELL / HITACHI LTD (PURPOSE) To continue safety operation for a long time by adjusting flow rate based on the liquid level of mixed fuel and fuel concentration or cell output. (CONSTITUTION) In a fuel cell having, for example, an output of 12V, 50W, a circulation flow rate in a fuel circulation flow passage is set to 700cc/min. When the liquid level is lowered, about 30cc of water a time is supplied to the fuel circulation passage from a tank 101 by the signal of a liquid level sensor 12. When fuel concentration is decreased to below 1mol/l, about 10cc of fuel a time is supplied to the fuel circulation passage by the signal of a methanol concentration sensor 13. Even if load current or operation temperature of the fuel cell is varied, the fuel cell is safely operated for a long time. |
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Local penetrating proton beam transmutation doping method for silicon / Industrial Technology Research Institute, TWX Efficient transmutation doping of silicon through the bombardment of silicon wafers by a beam of protons is described. A key feature of the invention is that the protons are required to have an energy of at least 4 MeV to overcome the Coulomb barrier, thereby achieving practical utility . When this is done, transmutationally formed phosphorus in concentrations as high as 10.sup.16 atoms per cc. are formed from proton beams having a fluence as low as 10.sup.19 protons per square cm. As a byproduct of the process sulfur is also formed in a practical concentration range of about 10.sup.13 atoms per cc. This is readily removed by annealing at temperatures of the order of 700.degree. C. Because of the high energy of the protons, several silicon wafers may be processed simultaneously. As expected, the additional phosphorus is uniformly deposited throughout the entire thickness of a wafer. Masks, either freestanding or contact, may also be used in order to limit the transmuted regions to particular desired areas. |
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내부 뱃치혼합기용 2 날개 비교합로우터들 및 그 작동 방법 / 화아렐코오포레이션 집진기에 사용되는 폴리에스터 필라멘트사의 직물로 된 백 필터에 관한 것으로 박리성이 좋으면서도 여과효율이 우수한 백 필터를 제공한다.모노필라멘트의 섬도가 0.5-4데니어(총 데니어가 300-700데니어)를 갖는 교락사에 80-240T/M의 꼬임수를 부여한 사를 사용하여 X/Y 트윌(X,Y는 1-3의 정수)조직으로 제조한다. 직물의 밀도는 경사 50-100본/인치, 위사 35-65본/인치로 하여 제직하고 생지에 여과효율을 높일 목적으로 150-200도씨의 고온에서 열고정시킬때 직물에 5-15%의 크림프를 부여한다. 이러한 백필터는여과물 제거를 위한 털어내기 방식에서 순간적인 역압에 의해 직포면이 인장할때 통기도가 22-27cc/cm2/sec에서 13-18cc/cm2/sec으로 급격히 떨어지므로 분진의 누출을 방지하게 된다. 망목 막힘현상이 적고 여과물의 박리성이 우수하며 동시에 압력손실이 적으므로 운전경비를 절감할 수 있고, 고가 제품의 원료 회수, 고철용융시 발생하는 카본입자 및 미연소 분진의 포집, 쇄석시의 분진 포집등, 다양한 분야에 사용된다. |
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MAGNETIC RECORDING MEDIUM / MATSUSHITA ELECTRIC IND CO LTD (PURPOSE) To provide a thin film magnetic recording medium having a high C/N. (CONSTITUTION) A first layer 14 composed mainly of Co and Cr, or Co, Ni, and Cr and second layer 15 composed mainly of Co and O, or Co, Ni, and O are successively formed on a substrate 13 made of polyethylene terephtfialate or polyethylene naphthalate. The film thickness, saturation magnetization, in- plane coercive force, and in-plane squareness ratio of the layer 14 are respectively set at 20-80nm, 100-400emu/cc, 200-700Oe, and 0.6-0.9 and the film thickness, saturation magnetization of the layer 15 are respective set at 80-200nm and 400-550emu/cc. In addition, the in-plane coercive force and in-plane squareness ratio of the second layer 15 after deposition are respectively set at 800-1,500 Oe and 0.65-0.85 and the film thickness of the second layer 15 is made larger than that of the first layer 14. |
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SILICON WAFER AND ITS MANUFACTURING METHOD / SUMITOMO SITIX CORP PROBLEM TO BE SOLVED: To exhibit enough gettering capability even in a specific low temperature device manufacturing process by preparing a specific polyhedron oxygen deposit having specific oxygen deposit density and a specific size before starting the process with a heat treatment. SOLUTION: There is used a CZ silicon wafer of 8 inch, P type (100), oxygen concentration 13.5 to 14.5×1017atoms/cc (Old ASTM). Processing is done in an Ar atmosphere at a temperature rise rate of 1 to 10°C/min between 700 to 1200°C, and a heat treatment held at 1200°C for 1 hour is applied. A wafer is manufactured which contains an oxygen deposit having a size of 100nm or more at a density of 1×105/cm2to 106/cm2. Hereby, the oxygen deposit exhibits excellent gettering capability in a device manufacturing process at low temperature of 1000°C or lower.COPYRIGHT: (C)1997,JPO |
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THERMAL OXIDATION OF SILICON / MATSUSHITA ELECTRONICS CORP (PURPOSE) To enable the threshold value of an MOSFET to be controlled only by controlling the gas inside a reaction tube for thermal oxidation furnace by a method wherein a mixed gas of HCl/O2 is led into a heating furnace at a preheating temperature; after changing-over to N2 gas, silicon substrates are lsd thereinto; the heating furnace is slowly heated up to the specified thermal oxidizing temperature; the mixed gas of HCl/O2 is led thereinto again; and the gas, after changing-over to 02 again, is slowly cooled down. (CONSTITUTION) The temperature (a) of a heating furnace is set up at e.g. 900°C to lead HCl (180cc/min/O2 (3/min) gas into a reaction tube 1 before feeding (b) Si wafers. Next, the gas changed-over to N2 (3 /min) is led into the reaction tube 1 for 20 minutes; Si wafers 4 erected on a boat 5 are fed to the reaction table 1 to be heated (e) by 5°C/min up to the temperature at 1100°C by slow heating process; and the gas is changed-over to HCl(180cc/min)/O2 (3l/min) to be oxidized for 13 minutes. Later, the gas is changed-over to N2 (3l/min) again to cool the reaction tube 1 by 3°C/min down to the temperature at 900°C by a slow cooling process so that a thermal oxidized film 700 Å thick is formed by controlling the characteristics VTH of an MOSFET. |
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GAS BARRIER LAMINATE FILM, AND METHOD FOR PRODUCING THE SAME / TORAY ADVANCED FILM CO LTD PROBLEM TO BE SOLVED: To provide a laminate film for packaging excellent in gas barrier properties and piercing strength with 7 μm or more and 13 μm or less thickness.SOLUTION: On one side of a polyester film with 300 MPa or more breaking strength in the longitudinal direction, 260 MPa or more breaking strength in the width direction, 2.5% or less thermal shrinkage factor at 150°C and after 30 min in the longitudinal direction, and 1.7% or less thermal shrinkage factor at 150°C and after 30 min in the width direction, a metal thin film layer with 15-700 ng/cm2 deposited amount is arranged, and a layer formed of an inorganic compound with 10-100 nm thickness is thereafter laminated. Thereby, a gas barrier laminate film can be obtained which has 1.5 cc/(m2×day) or less oxygen permeability, 1.5 g/(m2×day) or less water vapor permeability, and 0.7 N/μm or more piercing strength per unit thickness of the film. |
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INSECTICIDE / ASAHI GLASS CO LTD (PURPOSE) To obtain an insecticide, especially acaricide improved in drug action of boron compound and simultaneously formed into a shape capable of readily handling by carrying a boron compound on a carrier having a specific oil absorption. (CONSTITUTION) A boron compound or as necessary the boron compound and mildewproofing agent are carried on a carrier, especially silicic acid carrier, having 180-290ml/100g oil absorption, preferably having 40-700Å average pore size and 0.7-2.0cc/g pore volume at an amount of the boron compound of 13-30wt.% (expressed in terms of H3 BO3 ) and at an amount of mildewproofing agent of 0.5-7wt.% each based on weight after carrying to provide the insecticide, especially acaricide capable of maximally exhibiting drug action of the boron compound, which is relatively small in fear giving toxicity to human body or becoming water pollution source compared with organic chlorine based or organic phosphor based insecticide, but harmful also to human body when directly and singly sprayed and brings about inconvenience of scattering, without impairing drug action thereof. |
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HIGH-PRESSURE METAL VAPOR DISCHARGE LAMP / MITSUBISHI ELECTRIC CORP (PURPOSE) To raise color renditional property and lamp characteristic of a luminous tube satisfying a specific requirement by providing a film containing a red fluorescent substance having a maximum luminance in a specific wave length range on the surface of outer tube and also by filling at least one of zinc and cadmium in addition to mercury in the tube. (CONSTITUTION) The inner wall of the eggplant-shaped light-permeable glass outer tubr 1 is coated with the luminous film 3 consisting of single or plural fluorescent substances containing at least a red fluorescent substance having a maximum and linear luminance of a wave length of 610W630nm. And, the outer tube 1 is provided fixedly with the luminous tube 4 into which besides mercury, at least one of zinc and cadmium is enclosed in its inside in order to form a lamp of a rated tube power of 700W. The tube diameter (D) of the luminous tube 4, the length la in cm between electrodes, the length le in cm between electrode tip and sealed portion 13, and amounts (mHg , mCd , and mZn in mg/cc) of Hg, Cd, and Zn enclosed are regulated to values satisfying the formulas. Thus, the color renditional property can be raised and stable lamp characteristics can be obtained. |
ScienceON '논문' 검색
더보기ScienceON '보고서' 검색
더보기| No | 제목 / 내용 |
|---|---|
| 1 |
채소 화훼류의 육묘 및 양액재배 최적배지 개발 , 경상대학교 , 2002 |
| 2 |
유산균 SB88의 알코올성 간장해 억제 최영욱 , 경상대학교 , 2010 |
| 3 |
유도가열 조리용기 도전판과 탈착식 자루를 적용한 인덕션용 냄비와 후라이팬 개발 최영욱 , (주)서원팰러스 , 2015 |
| 4 |
알루미늄 주물 제작 공정에서 비산 배출되는 입자상 물질 포집 및 제거 기술 개발 박복동 , (주)마이크로원 , 2020 |
| 5 |
백신 자동 접종시스템 개발 및 실용화 이동길 , 국립수산과학원 , 2014 |
| 6 |
국내외 대용량 과학기술 실험데이터 공동활용 및 활성화 연구 이동길 , 한국과학기술정보연구원 , 2012 |
| 7 |
과채류공통수출연구사업단 김일섭 , 서울시립대학교 , 2014 |
| 8 |
가습성능이 향상된 기화 필터식 에어워셔 개발 김일섭 , (주)경희 , 2015 |